V-shape through wafer via manufactured by drie variable isotropy process

D. Vasilache, S. Colpo, S. Ronchin, F. Giacomozzi, B. Margesin
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引用次数: 3

Abstract

A new process for through-wafer interconnects was studied by our group. This new process was developed to facilitate metallised through wafer via holes manufacturing. V-shape profile can contribute to an easier metallisation process and better adhesion. Manufacturing process use the possibility to change the isotropy in the Deep Reactive Ion Etching (DRIE) equipments from anisotropic to completely isotropic. Two slightly different processes were used in order optimize the technology and to see the changes introduced by isotropic/anisotropic processes sequence.
采用驱动变各向同性工艺制造v形通孔晶圆
本课题组研究了一种新的晶圆互连工艺。这种新工艺是为了方便金属化晶圆通孔制造而开发的。v形轮廓有助于更容易的金属化过程和更好的附着力。制造过程利用了改变深反应离子蚀刻(DRIE)设备各向同性的可能性,从各向异性到完全各向同性。为了优化工艺,并观察各向同性/各向异性工艺顺序带来的变化,使用了两种略有不同的工艺。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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