A simple method to improve the energy capability of large DMOS power transistors

Abstract

In this paper, a simple method to improve the energy capability of large DMOS transistors is proposed. The energy capability is increased by ensuring a more uniform temperature profile across the power device. This is achieved by changing the current densities inside different regions of the DMOS by means of a very simple circuit, no temperature sensors and no technological changes being required. Improvements in the energy capability of 9.2% or even 39% are observed, depending on the operating conditions. As demonstrated by measurements, this solution proves to be effective for a wide range of dissipated energies.