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A novel concept for low drift chemical sensing at micro and nano-scale 微纳米尺度低漂移化学传感的新概念
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650518
C. Cobianu, B. Șerban, I. Georgescu, S. Costea, C. Bostan
{"title":"A novel concept for low drift chemical sensing at micro and nano-scale","authors":"C. Cobianu, B. Șerban, I. Georgescu, S. Costea, C. Bostan","doi":"10.1109/SMICND.2010.5650518","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650518","url":null,"abstract":"It is the purpose of this paper to present a novel generic concept for low drift chemical sensing which is applicable at micro and nanometer scale, based on a new, all-differential approach. At micrometer level, our principle is explained by means of surface acoustic wave (SAW) chemical sensing, while at nano level, we are using the resonant sensing principle to develop our genuine differential concept. Unlike the traditional differential approaches based on functionalized sensing layer in the sensing loop, and on a uncoated surface in the reference loop, our all differential concept provides a better response subtraction between the two paths, as the sensing loop consists of a functionalized sensing layer, as before, but, the reference loop consists of a functionalized non-sensing layer, with the same ageing and humidity behavior as the sensing layer. Twinned electronic reading is used for both loops, and thus all the common mode signals are subtracted in the differential reading, assuring the minimum base line drift of the sensor. Preliminary results of all differential sensor response to humidity and temperature variations are shown for the SAW sensors, with the sensor signal kept independent of their changes.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122798026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High temperature SiC Schottky diodes with stable operation for space application 工作稳定的高温SiC肖特基二极管，适用于空间应用
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650590
V. Banu, P. Godignon, X. Jordà, M. Vellvehí, J. Millán, P. Brosselard, D. López, J. Barbero
{"title":"High temperature SiC Schottky diodes with stable operation for space application","authors":"V. Banu, P. Godignon, X. Jordà, M. Vellvehí, J. Millán, P. Brosselard, D. López, J. Barbero","doi":"10.1109/SMICND.2010.5650590","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650590","url":null,"abstract":"This work presents the long-term stability of the SiC Schottky diodes able to operate in the temperature range −170°C/280°C, specially developed for the space mission BepiColombo. This mission consists in launching two satellites around the Mercury planet. After a travel of 6 years, the satellites will be orbiting around Mercury at least one year. When orbiting around Mercury, the satellites will experience seasonal eclipses. The numbers of cycles −170°C/280°C are in the range of 4,000. The diodes are used as protection devices for the solar cells arrays. To target this application, we have developed 5A/300V breakdown voltage Silicon Carbide Schottky diodes. Long-term tests demonstrated a very good stability of the electrical, mechanical and thermal parameters.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123726857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
New polyimides containing aliphatic segments and thin films based on them 含脂肪段的新型聚酰亚胺及其薄膜
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650689
D. Popovici, C. Hulubei, V. Musteata, M. Brumǎ, A. Muller
{"title":"New polyimides containing aliphatic segments and thin films based on them","authors":"D. Popovici, C. Hulubei, V. Musteata, M. Brumǎ, A. Muller","doi":"10.1109/SMICND.2010.5650689","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650689","url":null,"abstract":"A series of polyimides (PI) based on two dianhydrides, namely 5-(2,5-dioxotetra-hydro-3-furanyl)-3-methyl-3-cyclohexene-1,2-dicarboxylicanhydride (DOCDA) and benzophenonetetracarboxylicdianhydride (BTDA), and an aliphatic diamine, namely 1,6 diaminohexane (DAH), have been obtained by solution polycondensation reaction, followed by thermal ring closure of the resulting polyamic acids. The chemical structures were identified by infrared and 1H-NMR spectroscopy and their thermal and electrical properties (dielectric constant and dielectric loss at different frequencies) were investigated. The polymers showed good thermal stability, with no significant weight loss up to 340°C, with 5% weight loss temperature in the range of 345–430°C and glass transition temperatures (Tgs) between 122–190°C. The resulting polyimides gave flexible films by thermal imdization of poly (amic acid) precursors. The AFM analysis revealed a smooth topography of their surfaces, with root-mean-square (Sq) roughness between 0.42–6.32 nm and average roughness (Sa) in the range of 0.33–2.39 nm. The dielectric constants of the PI films varied between 3.05 and 2.68 at 1 MHz frequency. The correlation between the polymers structure and their properties has been discussed.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121075078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
CNT film grown on nanoporous silicon 纳米多孔硅上生长的碳纳米管薄膜
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650256
E. Czerwosz, E. Kowalska, M. Kozłowski, H. Wronka, F. Craciunoiu, M. Miu, A. Dinescu
{"title":"CNT film grown on nanoporous silicon","authors":"E. Czerwosz, E. Kowalska, M. Kozłowski, H. Wronka, F. Craciunoiu, M. Miu, A. Dinescu","doi":"10.1109/SMICND.2010.5650256","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650256","url":null,"abstract":"Results of SEM characterization of CNT film grown on nanoporous silicon (NP-Si) plate covered with 2 step PVD/CVD layer are presented. SEM studies were performed for all stages of CNT film preparation process. It was found that the size of pores in NP-Si affects the final CNT film form and adhesion.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122732727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mesoporous carbon pipes-suitable materials for photocatalytic supports 介孔碳管——适合于光催化支架的材料
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650615
M. Ignat, C. Pastravanu, E. Popovici
{"title":"Mesoporous carbon pipes-suitable materials for photocatalytic supports","authors":"M. Ignat, C. Pastravanu, E. Popovici","doi":"10.1109/SMICND.2010.5650615","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650615","url":null,"abstract":"Carbon nanotubes, fullerenes, and mesoporous carbon structures constitute a new class of carbon nanomaterials with properties that differ significantly from other forms of carbon such as graphite and diamond. The ability to custom synthesize fiber-like mesoporous carbon with attached functional groups has opened up new avenues to design high surface area catalyst supports and materials with high photochemical activity. Unlike the conventional graphite phase, carbon nanostructures possess metallic or semiconductor properties that can induce catalysis by participating directly in the charge transfer process. Further, the photochemical properties of these materials facilitate modulation of their charge transfer properties and aid in the design of photocatalysts for phenol degradation.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125096654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effect of dopant on the thermal and electrical behavior of nanostructured ceria materials 掺杂剂对纳米结构二氧化铈材料热电性能的影响
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650675
N. Cioateră, V. Pârvulescu, A. Rolle, R. Vannier
{"title":"Effect of dopant on the thermal and electrical behavior of nanostructured ceria materials","authors":"N. Cioateră, V. Pârvulescu, A. Rolle, R. Vannier","doi":"10.1109/SMICND.2010.5650675","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650675","url":null,"abstract":"Nanopowders with compositions Ce<inf>0.8</inf>Gd<inf>0.2</inf>O<inf>2−δ</inf> (CG), Ce<inf>0.8</inf>Sm<inf>0.2</inf>O<inf>2−δ</inf> (CS), and Ce<inf>0.9</inf>Eu<inf>0.1</inf>O<inf>2−δ</inf> (CE) have been synthesized by a modified Pechini method. X-ray diffraction (XRD) revealed that all powders calcined at 550°C were single phase, with the cubic fluorite-type structure. The good sintering properties of the synthesized nanopowders allowed us to obtain dense ceramics (>97% theoretical density). The ionic conductivities of doped ceria ceramics were investigated as a function of temperature by using AC impedance spectroscopy in the temperature range 300–800°C. The best conductivity was evidenced for the Ce<inf>0.8</inf>Sm<inf>0.2</inf>O<inf>2−δ</inf> sample.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128333457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
DIffractive Microlenses With binary focal points on the optical axis 在光轴上有双焦点的衍射微透镜
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650237
M. Mihailescu, A. Sobetkii, M. Pelteacu
{"title":"DIffractive Microlenses With binary focal points on the optical axis","authors":"M. Mihailescu, A. Sobetkii, M. Pelteacu","doi":"10.1109/SMICND.2010.5650237","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650237","url":null,"abstract":"The aim of our study was to find a simple design for diffractive microlenses (DMLs) which will generate two focal points on the propagation axis at plane wave incidence. We investigate the influence of the missing central zones in the diffraction pattern. The fabrication steps include e-beam lithography (for mask pattern) and reactive ion etching (for transparent DMLs). To visualize their transparent binary microrelief and the phase profile, we employ the digital holographic microscopy technique. Experimental and simulation results are presented.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121629333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Selection of gas sensing materials using the Hard Soft Acid Base theory; application to Surface Acoustic Wave CO2 detection 软硬酸碱理论在气敏材料选择中的应用在表面声波CO2探测中的应用
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650619
B. Șerban, A. K. Sarin Kumar, C. Cobianu, O. Buiu, S. Costea, C. Bostan, N. Varachiu
{"title":"Selection of gas sensing materials using the Hard Soft Acid Base theory; application to Surface Acoustic Wave CO2 detection","authors":"B. Șerban, A. K. Sarin Kumar, C. Cobianu, O. Buiu, S. Costea, C. Bostan, N. Varachiu","doi":"10.1109/SMICND.2010.5650619","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650619","url":null,"abstract":"The Hard Soft Acid Base (HSAB) theory is introduced as a new tool to select or design sensitive materials for carbon dioxide detection with SAW-BAW (Surface Acoustic Waves - Bulk Acoustic Waves) devices. According to HSAB, CO2 is hard acid, thus small organic or inorganic molecules, or polymers which can act as hard bases could be suitable candidates as sensing layers for carbon dioxide detection. As a consequence of this theory, we propose the following polymers as potential candidates for CO2 sensing: simple polyallylamine, N-substituted polyallylamine, polydiallylamine and polyvinylamine, and mixtures of these polymers. The SAW device coated with one of the selected polymers, polyallyamine, shows good sensitivity for CO2 concentration (in the range 500–5000 ppm), long term stability and repeatability.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114458823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Analysis of liquids and viscoelestic films by quartz crystal microbalance 用石英晶体微天平分析液体和粘弹性薄膜
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650488
I. Dulama, G. Cimpoca, C. Radulescu, I. Popescu, I. Bancuta, M. Cimpoca, I. Cernica
{"title":"Analysis of liquids and viscoelestic films by quartz crystal microbalance","authors":"I. Dulama, G. Cimpoca, C. Radulescu, I. Popescu, I. Bancuta, M. Cimpoca, I. Cernica","doi":"10.1109/SMICND.2010.5650488","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650488","url":null,"abstract":"In this paper we present a very new technique for analytical methods which utilize the quartz crystal microbalance (QCM). This is rapid expansion in application and understanding-oriented work. Using the QCM in the liquid phase and applying it to non-rigid over layers have created new experimental opportunities. In research, the most common QCM crystal applications include metal deposition monitors, chemical reaction monitors, biomedical sensors, and environmental monitoring applications.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125471383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
300mA adjustable LDO with 10µA ground current 300mA可调LDO，接地电流为10µA
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650532
C. Stănescu, R. Iacob, C. Dinca, C. Caracas, O. Profirescu
{"title":"300mA adjustable LDO with 10µA ground current","authors":"C. Stănescu, R. Iacob, C. Dinca, C. Caracas, O. Profirescu","doi":"10.1109/SMICND.2010.5650532","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650532","url":null,"abstract":"This paper presents an adjustable 300mA CMOS LDO built in a double-metal 0.5µm 16V CMOS technology. It uses a low-current bandgap which needs only 1.5µA. It includes a symmetrical op amp configured as voltage follower, having a built-in adaptive bias behavior. The circuit consumes 10µA without load, less than 40 µA at full load, and uses a 1.25V voltage reference. Dropout voltage at 300mA is typical 200mV. Input voltage range is 2.3V to 7V.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"02 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129529334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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