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Precision Crosssectional Analysis of LSI and VLSI Devices 大规模集成电路和超大规模集成电路器件的精密截面分析
19th International Reliability Physics Symposium Pub Date : 1981-04-01 DOI: 10.1109/IRPS.1981.362985
Peter G. Angelides
{"title":"Precision Crosssectional Analysis of LSI and VLSI Devices","authors":"Peter G. Angelides","doi":"10.1109/IRPS.1981.362985","DOIUrl":"https://doi.org/10.1109/IRPS.1981.362985","url":null,"abstract":"This is a tutorial paper describing and illustrating a crosssectional procedure for LSI and VLSI devices. The significant results using this procedure are one to one measurements of circuit parameters and a very clear view of the crosssectioned circuit at any given point. It is thus possible to measure with ease dimensions in the 0.3 micron range using the light microscope.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"23 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131958310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Temperature Accelerated Estimation of MNOS Memory Reliability MNOS存储器可靠性的温度加速估计
19th International Reliability Physics Symposium Pub Date : 1981-04-01 DOI: 10.1109/IRPS.1981.362966
T. Ajiki, M. Sugimoto, H. Higuchi, S. Kumada
{"title":"Temperature Accelerated Estimation of MNOS Memory Reliability","authors":"T. Ajiki, M. Sugimoto, H. Higuchi, S. Kumada","doi":"10.1109/IRPS.1981.362966","DOIUrl":"https://doi.org/10.1109/IRPS.1981.362966","url":null,"abstract":"A MNOS non-volatile memory has many special features and a good marketability. In spite of that it is not widely used due to its undeveloped reliability. Life test experiments were done under various application conditions to obtain an exact reliability estimation for a MNOS memory. Result of these test imply the application of erase/ write cycles prior to retention life test experiments, which is preferable for a proper estimation of life time at field operation conditions. A screening procedure at high temperature for a short time becomes possible by applying a proper acceleration factor.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130959571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Reliability Tests and Stress in Plastic Integrated Circuits 塑料集成电路的可靠性测试和应力
19th International Reliability Physics Symposium Pub Date : 1981-04-01 DOI: 10.1109/IRPS.1981.362978
W. Schroen, James L. Spencer, John A. Bryan, Robert D. Cleveland, Terry D. Metzgar, D. Edwards
{"title":"Reliability Tests and Stress in Plastic Integrated Circuits","authors":"W. Schroen, James L. Spencer, John A. Bryan, Robert D. Cleveland, Terry D. Metzgar, D. Edwards","doi":"10.1109/IRPS.1981.362978","DOIUrl":"https://doi.org/10.1109/IRPS.1981.362978","url":null,"abstract":"Temperature cycling and pressure cooker environmental tests were performed on integrated strain gauge and metal test structures. Test bars were packaged in different plastic encapsulation materials and under different packaging procedures. For temperature cycling, dramatic differences in build-up and relief of internal stress in silicon bars were found as a function of the packaging conditions selected. Packaging conditions also affected the performance of test structures and actual circuits in pressure cooker. Conclusions for plastic IC reliability are reached, as illustrated by an innovative test structure for simultaneous measurement of stress, leakage and corrosion. In conclusion, modular reliability test bars are discussed in relation to the strategy for reliability prediction.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"429 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131948741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
Phase Dependent Voltage Contrast - An Inexpensive SEM Addition for LSI Failure Analysis 相位相关的电压对比-一种廉价的SEM附加的LSI失效分析
19th International Reliability Physics Symposium Pub Date : 1981-04-01 DOI: 10.1109/IRPS.1981.363007
D. Younkin
{"title":"Phase Dependent Voltage Contrast - An Inexpensive SEM Addition for LSI Failure Analysis","authors":"D. Younkin","doi":"10.1109/IRPS.1981.363007","DOIUrl":"https://doi.org/10.1109/IRPS.1981.363007","url":null,"abstract":"A simple and inexpensive SEM voltage contrast technique has been developed which displays die-level logic-state information by distinguishing between in- and out-of-phase signals with respect to a reference signal. The technique as currently implemented also permits on-chip delay measurements down to 75 ns with ±10% resolution. Electron beam blanking is not required.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120946401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Statistics of Defect Related Breakdown 缺陷相关分解的统计
19th International Reliability Physics Symposium Pub Date : 1981-04-01 DOI: 10.1109/IRPS.1981.362998
M. Shatzkes, M. Av-Ron
{"title":"Statistics of Defect Related Breakdown","authors":"M. Shatzkes, M. Av-Ron","doi":"10.1109/IRPS.1981.362998","DOIUrl":"https://doi.org/10.1109/IRPS.1981.362998","url":null,"abstract":"An analysis of dielectric breakdown is presented under the assumption that breakdown events occurring at defect-free regions (intrinsic) and-at defects are independent. The yield as function of time, when the defects are Poisson distributed, is a product of factors reflecting defect-related and intrinsic breakdown. Explicit results are given for various tests commonly used in studies of dielectric reliability. A statistical model of dielectric breakdown is required for precise reliability projections and for assessment of dielectric quality from data obtained in breakdown tests. Such a model was developed by Solomon, Klein and Albert1 for defect free insulators. We2,3 derived a model incorporating the effects of defects and presented results for the case where all defects were the same type, i.e., the probability for breakdown at each defect being the same. Our purpose here is to extend our analysis to the case of multiple defect types and to further elucidate the implications of our model.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126166945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A Mechanism for the Dependence of Moisture Detection Sensitivity on Gas Composition in Residual Gas Analysis 残余气体分析中水分检测灵敏度随气体成分变化的机理
19th International Reliability Physics Symposium Pub Date : 1981-04-01 DOI: 10.1109/IRPS.1981.362990
J. Kiely, P. Flinn, B. Sun
{"title":"A Mechanism for the Dependence of Moisture Detection Sensitivity on Gas Composition in Residual Gas Analysis","authors":"J. Kiely, P. Flinn, B. Sun","doi":"10.1109/IRPS.1981.362990","DOIUrl":"https://doi.org/10.1109/IRPS.1981.362990","url":null,"abstract":"The measurement of internal water vapor in semiconductor packages by Residual Gas Analysis (RGA) is complicated by the dependence of the detected signal on gas composition. In particular, the dependence on the percentage of O2 or H2 present is quite significant. The data presented show that the detected moisture signal contains an additive portion proportional to the percentage O2 or H2 present, but is independent of the true water present. A mechanism, sputtering or local heating in the ionizer of the mass spectrometer, is shown to account for this behavior.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124233176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reliability Implications of Polyimide Multilevel Insulators 聚酰亚胺多层绝缘子的可靠性影响
19th International Reliability Physics Symposium Pub Date : 1981-04-01 DOI: 10.1109/IRPS.1981.363010
G. Brown
{"title":"Reliability Implications of Polyimide Multilevel Insulators","authors":"G. Brown","doi":"10.1109/IRPS.1981.363010","DOIUrl":"https://doi.org/10.1109/IRPS.1981.363010","url":null,"abstract":"Polyimide films possess many characteristics that make them attractive candidates for application as multilevel insulators in the fabrication of VLSI devices. These include planarization of underlying topographies to improve metal step coverage, low interelectrode capacitance, low process temperatures compatible with all metal systems, and freedom from the corrosion liability associated with the phosphorus-doped oxide films commonly used for this purpose. The application of polyimide multilevel technology to MOS circuitry has been described by Sato, et al.1 for conventional aluminum gate devices, Shah, et al.2 for refractory gate structures, and Larsen3 for more complex silicon and aluminum MOS technology. Electrical parameters of polyimide films, including dc coniduction, dielectric constant and dissipation factor, and dielectric strength have been reported by Zielinski4 and Samuelson.5 At this symposium in 1976, Gregoritsch,6 and more recently Mukai, et al.7 have described reliability-oriented studies of structures containing polyimide films. While several of these workers have discussed effects of ionic contamination, dipoles, and electronic conduction at elevated temperatures, models relating these parameters to device reliability have not yet appeared.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131160539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A New Technique for Input Protection Testing 输入保护检测新技术
19th International Reliability Physics Symposium Pub Date : 1981-04-01 DOI: 10.1109/IRPS.1981.362999
D. Fisch
{"title":"A New Technique for Input Protection Testing","authors":"D. Fisch","doi":"10.1109/IRPS.1981.362999","DOIUrl":"https://doi.org/10.1109/IRPS.1981.362999","url":null,"abstract":"Input protection circuits are typically evaluated by resistively discharging a capacitor into the tested device with one or more of its pins grounded. These techniques usually result in junction damage in or near the irnput protection circuit, rather than in gate oxide ruptures as is seen in most electrostatic damage field failures. To eliminate this inconsistency, a new testing technique has been developed. Electro-static failures are modeled as occurring while the affected device is isolated from ground and forced to change potential at an externally determined rate. The nlew technique provides two quantitative parameters, namely the maximum voltage and the rise time of the applied pulse, which yield the voltage slew rate and the power dissipated into the device. By adjusting these paramieters to obtain a predeterrnined failure rate, an accurate comparison of the input protection networks on different devices may be obtained. In addition to reproducing the field failure mechanism, experimiiental data indicates that this technique has sufficient sensitivity to detect slight design variations in almiiost identical input protection circuits.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133711471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
CF4/O2 Plasma Accelerated Aluminum Metallization Corrosion in Plastic Encapsulated ICs in the Presence of Contaminated Die Attach Epoxies 模具附着环氧树脂污染下CF4/O2等离子体加速塑料封装集成电路铝金属化腐蚀
19th International Reliability Physics Symposium Pub Date : 1981-04-01 DOI: 10.1109/IRPS.1981.362979
R. Ritchie, D. Andrews
{"title":"CF4/O2 Plasma Accelerated Aluminum Metallization Corrosion in Plastic Encapsulated ICs in the Presence of Contaminated Die Attach Epoxies","authors":"R. Ritchie, D. Andrews","doi":"10.1109/IRPS.1981.362979","DOIUrl":"https://doi.org/10.1109/IRPS.1981.362979","url":null,"abstract":"Corrosion rates, in autoclave, of aluminum bonding pad metallization in plastic encapsulated packages were studied as a function of die attach materials. The failure rate for chlorine contaminated die attach epoxies was enhanced if the pad metallization had prior exposure to carbon tetrafluoride/oxygen plasma. Eutectically attached devices exposed to CF4/O2 demonstrated increased failure rates. These rates were found to vary with length of exposure.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114637725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
The Reflow Attachment and Reliability Testing of Ceramic Chip Carriers 陶瓷芯片载体的回流焊连接及可靠性测试
19th International Reliability Physics Symposium Pub Date : 1981-04-01 DOI: 10.1109/IRPS.1981.362980
H. Charles, B. Romenesko
{"title":"The Reflow Attachment and Reliability Testing of Ceramic Chip Carriers","authors":"H. Charles, B. Romenesko","doi":"10.1109/IRPS.1981.362980","DOIUrl":"https://doi.org/10.1109/IRPS.1981.362980","url":null,"abstract":"The results of an extensive program for the solder reflow attachment and reliability testiny of ceramic chip carriers for use in space satellites, implantable biomedical electronics, and underwater instrumentation are discussed in detail. The program was divided in three major parts; 1) the packaging of integrated circuit chips in ceramic carriers; 2) the selection and qualification of solders, reflow methods and cleaning processes; and 3) the validation of the chip carrier-substrate system for high reliability applications. Military Standard environmental testing of ceramic chip carriers alone and carriers attached to thin film and thick film (multilayer) ceramic substrates, glass, sapphire, and various printed wire circuit boards has been conducted. Test results are presented for various carrier-substrate-solder combinations along with discussions of associated failure modes and fabrication problem areas.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130883954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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