19th International Reliability Physics Symposium最新文献_第5页

Reliability Study of Plastic Encapsulated Copper Lead Frame/Epoxy Die Attach Packaging System 塑料封装铜引线框架/环氧贴片封装系统的可靠性研究

19th International Reliability Physics Symposium Pub Date : 1981-04-01 DOI: 10.1109/IRPS.1981.362981

J. R. Howell

引用次数: 4

The use of Marginal Voltage Measurements to Detect and Locate Defects in Digital Microcircuits 边缘电压测量在数字微电路缺陷检测与定位中的应用

19th International Reliability Physics Symposium Pub Date : 1981-04-01 DOI: 10.1109/IRPS.1981.362986

D. Ager, J. C. Henderson

引用次数: 9

Reaction Kinetics of Al Films with Phosphosilicate Glass (PSG) in Semiconductors 半导体中铝膜与磷硅酸盐玻璃(PSG)的反应动力学

19th International Reliability Physics Symposium Pub Date : 1981-04-01 DOI: 10.1109/IRPS.1981.363000

G. Digiacomo

引用次数: 2

Dynamic Measurement of the Water Vapor Content of Integrated Circuit Packages using Derivative Infrared Diode Laser Spectroscopy 利用导数红外二极管激光光谱动态测量集成电路封装中的水蒸气含量

19th International Reliability Physics Symposium Pub Date : 1981-04-01 DOI: 10.1109/IRPS.1981.362975

P. Bossard, J. Mucha

引用次数: 2

The Effects of Moisture on Multilayered Ceramic Top Brazed Flat Packs 水分对多层陶瓷顶部钎焊扁包的影响

19th International Reliability Physics Symposium Pub Date : 1981-04-01 DOI: 10.1109/IRPS.1981.362994

B. Drotman, Jim Silva

引用次数: 0

Electromigration Testing of Al-Alloy Films 铝合金薄膜的电迁移试验

19th International Reliability Physics Symposium Pub Date : 1980-10-01 DOI: 10.1109/IRPS.1981.363004

P. Ghate

{"title":"Electromigration Testing of Al-Alloy Films","authors":"P. Ghate","doi":"10.1109/IRPS.1981.363004","DOIUrl":"https://doi.org/10.1109/IRPS.1981.363004","url":null,"abstract":"A search for reliability improvement of Al film interconnections has led to the introduction of Al-Alloy films such as Al+Cu, Al+Si, Al+Cu+Si and so on. This paper describes thie results of an in-depth study of Al, Al+Cu (2 wt % Cu) and Al+Cu+Si (2 wt % Cu + 1 wt % Si) film interconnections and Silicon/Al-Alloy film contacts as they impact reliability of integrated circuits. Resistivity, microstructure and composition of Al-Alloy films vacuum deposited from an induction heated source (In-Source) and dc magnetron sputter deposition techniques have been investigated and it is concluded that both film deposition techniques are equally capable of producing these Al, Al+Cu (2 wt % Cu) and Al+Cu+Si (2 wt % Cu + 1 wt % Si) films of comparable physical properties. Chemical Analysis, X-Ray Fluorescence, Electron Microprobe, Scanning and Transmission Electron Microscopy and Ion Microprobe have been employed for Al-Alloy film characterization. Availability of automated dc magnetron sputter deposition equipment was a primary factor in the selection of magnetron sputter deposited Al-Alloy films for electromigration testing. Electromigration life tests on Al, Al+Cu and Al+Cu+Si film conductors (0.8 ¿m thick, 6 ¿m wide and 380, ¿m long) have been carried out at a current density of 1 × 106/ A/cm2 in the 150°C to 215°C ambience. Also, shallow junction devices with depths on the order of 0.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116663242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 14

SEM/EDAX Analysis of PIND Test Failures PIND测试失败的SEM/EDAX分析

19th International Reliability Physics Symposium Pub Date : 1900-01-01 DOI: 10.1109/IRPS.1981.362989

J. F. D. Porto, D. Loescher, H. Olson, P. Plunkett

{"title":"SEM/EDAX Analysis of PIND Test Failures","authors":"J. F. D. Porto, D. Loescher, H. Olson, P. Plunkett","doi":"10.1109/IRPS.1981.362989","DOIUrl":"https://doi.org/10.1109/IRPS.1981.362989","url":null,"abstract":"Packaged LSI and hybrid devices used in high reliability military and space applications must pass a rigorous series of screens defined by Method 5004 of Mil Standard 883B. One of these screens is the Particle Impact Noise Detection (PIND) test. This test uses a very sensitive acoustic transducer to listen for particles within the package while the package is vibrated and shocked. We have used SEM, EDAX, and optical microscopy to analyze the particles from PIND failures. From these analyses we have identified the primary sources of PIND failures and have developed procedures that yield a low reject rate at PIND test. The device used in this investigation was a 1 K RAM die eutectically attached to a 24-pin leadless hermetic package (LHP). The package is solder sealed in a belt furnace with a gold-tin eutectic preform and a gold-plated cover. We have recovered the particles from PIND test failures by placing lead tape over a punched hole in the gold plated Kovar lid. The package is then vibrated until the particles pass through the hole and are attached to the adhesive on the tape. From the analyses we have identified many sources of particles that cause PIND test failures; the main source being the gold-tin solder preform used in the sealing process. We have investigated the effect of sealing materials, furnace temperature, furnace ambient, and package orientation on the number of gold-tin solder spheres.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126082050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2