19th International Reliability Physics Symposium最新文献

Mechanisms of Temperature Cycle Failure in Encapsulated Optoelectronic Devices 封装光电器件温度循环失效机理研究

19th International Reliability Physics Symposium Pub Date : 1981-04-07 DOI: 10.1109/IRPS.1981.362987

J. Uebbing

{"title":"Mechanisms of Temperature Cycle Failure in Encapsulated Optoelectronic Devices","authors":"J. Uebbing","doi":"10.1109/IRPS.1981.362987","DOIUrl":"https://doi.org/10.1109/IRPS.1981.362987","url":null,"abstract":"One of the key reliability limitations of low cost encapsulated optoelectronic devices has been temperature cycling. This is because the clear polymers used to encapsulate the devices have expansion coefficients significantly greater than the devices to be encapsulated. This mismatch causes thermal stresses and cyclical stress causes low cycle fatigue failure.1 In this paper we show how the use of log-normal plots of the failure rate allows ready comparison of different device types and structures, extrapolation to different stress conditions and the examination of the statistical significance of the results. Two types of stress condition are distinguished, polymer motion and polymer force. In the polymer motion mode, the polymer portion is large and stiff compared to the rest of the device. In the polymer force mode, the polymer is small and/or soft compared to the device. In terms of device design, the two things that affect the mode and the temperature cycle reliability are structure and materials. In the structures area, a series of comparisons between elastic stress theory and observed failure rates is done for different device geometries. Stress concentrations around ceramic substrates, bending forces on ceramic substrates, stress concentrations around stiff lead frames, stress in wire loops and kink formation in gold wire are all examined. An integrated model for certain failure modes is proposed. In the materials area, the benefits of soft silicones and so-called magic epoxes are presented.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126949819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

A Method of Detecting Hot Spots on Semiconductors using Liquid Crystals 一种利用液晶检测半导体上热点的方法

19th International Reliability Physics Symposium Pub Date : 1981-04-07 DOI: 10.1109/IRPS.1981.362984

J. Hiatt

引用次数: 53

Highly Accelerated Temperature and Humidity Stress Test Technique (HAST) 高加速温度和湿度应力测试技术

19th International Reliability Physics Symposium Pub Date : 1981-04-07 DOI: 10.1109/IRPS.1981.362972

J. E. Gunn, Sushil K. Malik, Purabi M. Mazumdar

引用次数: 57

Monte Carlo Calculations Based on the Generalized Electromigration Failure Model 基于广义电迁移失效模型的蒙特卡罗计算

19th International Reliability Physics Symposium Pub Date : 1981-04-07 DOI: 10.1109/IRPS.1981.362992

K. Nikawa

引用次数: 27

The use of Silicone RTV Rubber for Alpha Particle Protection on Silicon Integrated Circuits 硅RTV橡胶在硅集成电路α粒子保护中的应用

19th International Reliability Physics Symposium Pub Date : 1981-04-07 DOI: 10.1109/IRPS.1981.362971

M. L. White, J. Serpiello, K. Striny, W. Rosenzweig

引用次数: 8

Dynamics of Charge Collection from Alpha-Particle Tracks in Integrated Circuits 集成电路中α粒子轨迹的电荷收集动力学

19th International Reliability Physics Symposium Pub Date : 1981-04-07 DOI: 10.1109/IRPS.1981.362970

C. Hsieh, P. Murley, R. R. O'Brien

引用次数: 85

Reliability Aspects of a Floating Gate E2 PROM 浮动栅E2 PROM的可靠性分析

19th International Reliability Physics Symposium Pub Date : 1981-04-07 DOI: 10.1109/IRPS.1981.362965

B. Euzent, N. Boruta, J. Lee, C. Jenq

引用次数: 27

A Three-Fold Increase in Current Carrying Capability of Al-Cu Metallurgy by Pre-Depositing a Suitable Underlay Material 预镀合适的衬底材料可使铝铜冶金的载流能力提高三倍

19th International Reliability Physics Symposium Pub Date : 1981-04-07 DOI: 10.1109/IRPS.1981.363003

J. Jaspal, H. Dalal

{"title":"A Three-Fold Increase in Current Carrying Capability of Al-Cu Metallurgy by Pre-Depositing a Suitable Underlay Material","authors":"J. Jaspal, H. Dalal","doi":"10.1109/IRPS.1981.363003","DOIUrl":"https://doi.org/10.1109/IRPS.1981.363003","url":null,"abstract":"To achieve the desired Cr-Cr202/Al-Cu laminate chip metalization, first Cr is deposited with the evaporation chamber back-filled with water vapor to a partial pressure of 1 to 4 × 10¿3 Pa. This is followed by standard Al Cu evaporation, lift-off or subetch, sinter, and insulation processing. The critical process step of bleeding in water vapor during Cr evaporation has to be maintained at an optimum because too much Cr202 will lead to high contact resistance and too little Cr202 will lead to a loss of diffusion barrier effectiveness. It is during the sintering cycle that 'Cr' diffusion into the Al-Cu metallization structure occurs along with formation of limited amounts of Al2O03 TThe presence of Al and Cr oxides in turn limits the formation of Cr and Al intermetallics. This results in an acceptable sheet resistance of the metallization structure. Accelerated testing of interconnecting stripes and various sizes of metal contacts to resistor and transistor devices at different temperature and current levels has been completed. As for Al-Cu metallization test results for Cr-Cr203/Al-Cu can be represented by tf J¿n exp(¿H ÷ kT) where J is the current density, T is the temperature, k is the Boltzman constant, ¿H is the activation energy and n is the current exponent. Thus at constant temperature J2 = J1 × (tf1 ÷ tf2)1/n and since for Cr-Cr203/Al-Cu metallurgy the testing done supports an improvement in electromigration lifetime of 1OX, an activation energy of 0.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130758303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

The Effect of Insulation Coatings on Forward Beta Degradation in Bipolar Transistors 绝缘涂层对双极晶体管正向β衰减的影响

19th International Reliability Physics Symposium Pub Date : 1981-04-07 DOI: 10.1109/IRPS.1981.363006

S. Zalar

{"title":"The Effect of Insulation Coatings on Forward Beta Degradation in Bipolar Transistors","authors":"S. Zalar","doi":"10.1109/IRPS.1981.363006","DOIUrl":"https://doi.org/10.1109/IRPS.1981.363006","url":null,"abstract":"Uncoated, SiO2-coated, and polyimide-coated NPN discrete bipolar transistors were subjected to forward life stressing at temperatures between 100°C and 200°C, and at stress current densities in metal lines between 0.2 and 0.8 × 106 A/cm2. The changes of current gain (beta) in these transistors were monitored as the function of stress time up to 1000 hours. Beta degradation in uncoated transistors started immediately. Later, however, when the mechanical stress generated by electromigration reached the yield point of CrAlCu metallurgy in the emitter area, the beta showed a strong recovery to values about 10% higher than the beta at time zero. This explanation was corroborated by the observation of extrusions in the scanning electron microscope. The overlayer of 2.4 ¿m of sputtered SiO2 strongly retarded the beginning of beta degradation but did not prevent it toward the end of life stressing. The overlayer of 2.7 ¿m of spun-on polyimide initially had a negligible effect on the beginning of beta degradation. Later, however, when the yield point of metallurgy was achieved, the polyimide seemed to partially block the extrusion of hillocks and prevented the recovery of beta. This was confirmed by SEM photography. The experiment verified the basic premise that the forward beta degradation in bipolar transistors can be described in terms of the mechanical stress generated by electromigration in the emitter region.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117179599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reliability of DH Ga1-XAlX As LEDs For Lightwave Communications 用于光波通信的DH - Ga1-XAlX led的可靠性

19th International Reliability Physics Symposium Pub Date : 1981-04-07 DOI: 10.1109/IRPS.1981.362983

C. Zipfel, A. Chin, V. Keramidas, R. H. Saul

{"title":"Reliability of DH Ga1-XAlX As LEDs For Lightwave Communications","authors":"C. Zipfel, A. Chin, V. Keramidas, R. H. Saul","doi":"10.1109/IRPS.1981.362983","DOIUrl":"https://doi.org/10.1109/IRPS.1981.362983","url":null,"abstract":"Double heterostructure Gal-xAlXAs LEDs operated at high current densities (3 × 103 A/cm2) are being used as sources in lightwave communication systems, for example in optical data links. This paper discusses the reliability of these devices, distinguishing between catastrophic degradation due to Dark Line Defect (DLD) formation and gradual aging mechanisms. Two modes of DLD formation are observed: (1) A certain percentage of devices fail in relatively short times by DLD formation at threading dislocations. The growth of these DLDs is strongly current dependent, but independent of temperature. A 100h, 100 mA burn-in eliminates all of the devices which fail by this mode. Burn-in failures can be kept as low as 5%. (2) Under accelerated aging as many as 25% of the devices which passed the burn-in fail after 103h by a new mode of DLD formation. This mode is temperature dependent and related to stress at the dielectric-metal interface. Analysis shows that a 25% freak population gives ¿40 FITS at 70°C. Accelerated aging studies of clear devices are complicated by two competing processes: a slow degradation in light output and a slow increase which dominates at high temperatures. Activation energies for the two processes are 0.65 and 0.75 eV, respectively. Projected values of MTTF are 9 × 107h at 25°C and 4 × 106h at 70°C.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124570535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4