{"title":"一种利用液晶检测半导体上热点的方法","authors":"J. Hiatt","doi":"10.1109/IRPS.1981.362984","DOIUrl":null,"url":null,"abstract":"This paper presents a failure analysis technique which uses cholesteric liquid crystals and polarized light to locate areas of high power dissipation on an integrated circuit. The technique is non-destructive and can be performed in a few minutes using common failure analysis equipment. An example is given involving the analysis of a CMOS latch-up mechanism.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"53","resultStr":"{\"title\":\"A Method of Detecting Hot Spots on Semiconductors using Liquid Crystals\",\"authors\":\"J. Hiatt\",\"doi\":\"10.1109/IRPS.1981.362984\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a failure analysis technique which uses cholesteric liquid crystals and polarized light to locate areas of high power dissipation on an integrated circuit. The technique is non-destructive and can be performed in a few minutes using common failure analysis equipment. An example is given involving the analysis of a CMOS latch-up mechanism.\",\"PeriodicalId\":376954,\"journal\":{\"name\":\"19th International Reliability Physics Symposium\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-04-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"53\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"19th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1981.362984\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"19th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1981.362984","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Method of Detecting Hot Spots on Semiconductors using Liquid Crystals
This paper presents a failure analysis technique which uses cholesteric liquid crystals and polarized light to locate areas of high power dissipation on an integrated circuit. The technique is non-destructive and can be performed in a few minutes using common failure analysis equipment. An example is given involving the analysis of a CMOS latch-up mechanism.
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