基于广义电迁移失效模型的蒙特卡罗计算

K. Nikawa
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引用次数: 27

摘要

采用蒙特卡罗计算方法研究了电迁移失效时间与线宽和电流密度的关系。在构建此模型时,共考虑了三个因素:薄膜的冶金性能、失效传播过程中的热过程以及应力诱导的质量流。在线宽依赖性研究中,中位失效时间(t50)随着线宽减小至约中位晶粒尺寸而减小,随着线宽进一步减小而急剧增大,与前人的实验结果吻合较好。在t50 (t50¿J-n)的电流密度依赖性中,指数因子(n)的各种值被成功地通过引入应力梯度建立的有效长度来解释。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Monte Carlo Calculations Based on the Generalized Electromigration Failure Model
The dependence of electromigration failure-time on line width and current density was studied using Monte Carlo calculations. In constructing the model used here, A total of three factors were considered: the metallurgical properties of the film, the thermal process during failure propagation, and the stress induced mass flow. In the study on line width dependence, median time to failure (t50) was revealed to decrease as line width decreased to about median grain size, and to increase steeply as the line width decreased further, in good agreement with previous experiments. A wide variety of values assigned to an exponential factor (n) in current density dependence of t50 (t50¿ J-n) was successfully explained by introducing the effective length where a stress gradient has built up.
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