19th International Reliability Physics Symposium最新文献_第2页

"Reliability of PtSi-Ti/W-Al Metallization System used in Bipolar Logics" "双极逻辑电路中使用的铂矽钛/铝金属化系统的可靠性"

19th International Reliability Physics Symposium Pub Date : 1981-04-07 DOI: 10.1109/IRPS.1981.363002

C. Canali, F. Fantini, G. Queirolo, E. Zanoni

引用次数: 0

Electro-Thermomigration in NMOS LSI Devices NMOS LSI器件中的电热迁移

19th International Reliability Physics Symposium Pub Date : 1981-04-07 DOI: 10.1109/IRPS.1981.363001

L. Dechiaro

引用次数: 14

NMOS Voltage Breakdown Characteristics Compared with Accelerated Life Tests and Field use Data NMOS电压击穿特性与加速寿命试验和现场使用数据的比较

19th International Reliability Physics Symposium Pub Date : 1981-04-07 DOI: 10.1109/IRPS.1981.362968

O. Hallberg

引用次数: 6

Evaluation of Critical Surface Cleanliness by Secondary Ion Mass Spectroscopy 二次离子质谱法评价临界表面清洁度

19th International Reliability Physics Symposium Pub Date : 1981-04-01 DOI: 10.1109/IRPS.1981.362988

R. Lowry, R. Masters

引用次数: 0

Memory Retention Life at Various Environmental and Life Tests 在各种环境和寿命测试中的记忆保留寿命

19th International Reliability Physics Symposium Pub Date : 1981-04-01 DOI: 10.1109/IRPS.1981.362973

Masaaki Isagawa, Hideo Oniyama, Hideo Azegami

引用次数: 0

New Quantitative Measurements of IC Stress Introduced by Plastic Packages 塑料封装引入集成电路应力定量测量新方法

19th International Reliability Physics Symposium Pub Date : 1981-04-01 DOI: 10.1109/IRPS.1981.362977

James L. Spencer, Walter Ff. Schroen, G. Bednarz, John A. Bryan, Terry D. Metzgar, Robert D. Cleveland, D. Edwards

引用次数: 53

Latent B-Radiation Damage in Hermetically Sealed NMOS Devices 密闭NMOS器件的潜在b辐射损伤

19th International Reliability Physics Symposium Pub Date : 1981-04-01 DOI: 10.1109/IRPS.1981.362969

J. L. Boyle, R. Mcintyre, R. E. Youtz, J. T. Nelson

引用次数: 1

Failure Modes in GaAs Power FETs: Ohmic Contact Electromigration and Formation of Refractory Oxides GaAs功率场效应管的失效模式:欧姆接触电迁移和难熔氧化物的形成

19th International Reliability Physics Symposium Pub Date : 1981-04-01 DOI: 10.1109/IRPS.1981.362993

A. Christou, E. Cohen, A. Macpherson

{"title":"Failure Modes in GaAs Power FETs: Ohmic Contact Electromigration and Formation of Refractory Oxides","authors":"A. Christou, E. Cohen, A. Macpherson","doi":"10.1109/IRPS.1981.362993","DOIUrl":"https://doi.org/10.1109/IRPS.1981.362993","url":null,"abstract":"Failure modes have been identified for two commercially available microwave power GaAs FETs constructed with aluminum gates. MTTF data for Al gate power FETs and Al gate in combination with refractory link power FETs-indicates the presence of a failure mode with a well defined activation energy. The first set of power FETs (Set A) use AuGe/Au source and drain contacts and Al gates. The second set use an Al-TiPt gate with AuGe-TiPt-Au source, drain contacts. The devices from set A were tested at 200°C under rf drive. An MTTF of 2200 hrs was achieved and source-drain electromigration was identified as the primary failure mode. This newly identified failure mode for ohmic contacts has been confirmed by Auger electron spectroscopy, and the SEM. Gallium has been shown to outdiffuse in the contact system with subsequent Ga whisker growth and gate void formation caused by the AuAl couple at the gate. Sputter AES profiles indicated that interdiffusion in the source and drain contacts extends into the active channel region under the bias-stress tests. The analyzed devices from the second set of power FETs (Al-TiPt gate with AuGe-TiPt-Au ohmic contacts) can be separated into four types: A, B, C, D. Type A failed catastrophically, type B failed non-catastrophically type C was annealed in nitrogen at 200-210°C for 150 hours and type D were untested devices which exhibited a high forward gate resistance.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132324313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Electrostatic Discharge Failures of Semiconductor Devices 半导体器件静电放电故障

19th International Reliability Physics Symposium Pub Date : 1981-04-01 DOI: 10.1109/IRPS.1981.362995

B. A. Unger

{"title":"Electrostatic Discharge Failures of Semiconductor Devices","authors":"B. A. Unger","doi":"10.1109/IRPS.1981.362995","DOIUrl":"https://doi.org/10.1109/IRPS.1981.362995","url":null,"abstract":"ESD (Electrostatic Discharge) is a significant cause of device failures at all stages of device and equipment production, assembly, test, installation and field use. Even though device designs include protection circuitry, it is relatively easy to generate static potentials during handling and shipping that exceed the limits of the protection networks. Damage from ESDs can cause either complete device failure by parametric shifts, or device weakness by flocally heating, melting, or otherwise damaging oxides, junctions or device components. There are three principal sources of charge which can give rise to damaging ESD events. 1. A charged person touches a device and discharges the stored charge to or through the device to ground. 2. The device itself acting as one plate of a capacitor can store charge. Upon contact with an effective ground the discharge pulse can create damage. 3. An electrostatic field is always associated with charged objects. Under particular circumstances, a device inserted in this field can have a potential induced across an oxide that creates breakdown. All devices and technologies are susceptible to damaging ESDs. The difference is in their degree of susceptibility. MOS structures appear to be the most susceptible to ESD damage. The generation of charge varies with materials, environment, and conditions of contact. All materials can be charged, however with conductors the charge is readily dissipated by grounding. With insulators, the charge is immobile and not readily dissipated. Two basic measures for avoiding ESD damage and failures are: 1.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133632935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 28

Humidity Activated Surface Leakage Paths on T.O. Case Style Glass Headers 湿度激活表面渗漏路径在T.O.箱式玻璃头

19th International Reliability Physics Symposium Pub Date : 1981-04-01 DOI: 10.1109/IRPS.1981.362974

James Calderbank, P. Holloway

引用次数: 1