{"title":"Humidity Activated Surface Leakage Paths on T.O. Case Style Glass Headers","authors":"James Calderbank, P. Holloway","doi":"10.1109/IRPS.1981.362974","DOIUrl":null,"url":null,"abstract":"This paper reviews the analysis of exterior leakage paths causing failures of common 2N2222A transistors. The failure mechanism, exterior leakage paths activated in high humidity conditions on the surface of glass seals, is identified. The glass constituents which are responsible for this intermittent, sometime self-correcting failure mechanism are discussed and the method of conduction analyzed.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"87 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"19th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1981.362974","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper reviews the analysis of exterior leakage paths causing failures of common 2N2222A transistors. The failure mechanism, exterior leakage paths activated in high humidity conditions on the surface of glass seals, is identified. The glass constituents which are responsible for this intermittent, sometime self-correcting failure mechanism are discussed and the method of conduction analyzed.