{"title":"\"双极逻辑电路中使用的铂矽钛/铝金属化系统的可靠性\"","authors":"C. Canali, F. Fantini, G. Queirolo, E. Zanoni","doi":"10.1109/IRPS.1981.363002","DOIUrl":null,"url":null,"abstract":"Metallurgical and electrical failure mechanisms of the PtSi- Ti/W-Al metal system were investigated in commercial bipolar logic devices and in \"to the purpose\" prepared samples. SEM, microprobe, AES and X-ray diffraction were used to study interdiffusion phenomena and intermetallic compound formation which were correlated to Schottky diode barrier height changes induced by thermal annealing. A few monolayers of oxygen at the Al-Ti/W interface will strongly reduce the degradation phenomena.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"\\\"Reliability of PtSi-Ti/W-Al Metallization System used in Bipolar Logics\\\"\",\"authors\":\"C. Canali, F. Fantini, G. Queirolo, E. Zanoni\",\"doi\":\"10.1109/IRPS.1981.363002\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Metallurgical and electrical failure mechanisms of the PtSi- Ti/W-Al metal system were investigated in commercial bipolar logic devices and in \\\"to the purpose\\\" prepared samples. SEM, microprobe, AES and X-ray diffraction were used to study interdiffusion phenomena and intermetallic compound formation which were correlated to Schottky diode barrier height changes induced by thermal annealing. A few monolayers of oxygen at the Al-Ti/W interface will strongly reduce the degradation phenomena.\",\"PeriodicalId\":376954,\"journal\":{\"name\":\"19th International Reliability Physics Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-04-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"19th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1981.363002\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"19th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1981.363002","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
"Reliability of PtSi-Ti/W-Al Metallization System used in Bipolar Logics"
Metallurgical and electrical failure mechanisms of the PtSi- Ti/W-Al metal system were investigated in commercial bipolar logic devices and in "to the purpose" prepared samples. SEM, microprobe, AES and X-ray diffraction were used to study interdiffusion phenomena and intermetallic compound formation which were correlated to Schottky diode barrier height changes induced by thermal annealing. A few monolayers of oxygen at the Al-Ti/W interface will strongly reduce the degradation phenomena.
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