{"title":"NMOS电压击穿特性与加速寿命试验和现场使用数据的比较","authors":"O. Hallberg","doi":"10.1109/IRPS.1981.362968","DOIUrl":null,"url":null,"abstract":"Statistics on voltage-accelerated failures of 4K NMOS RAM's have been compared with accelerated life test data and with real field use data. It is concluded that it is possible to get long-term reliability information from fast overvoltage step stress tests such as 40 ms and 1.2 s dwell time per step. The correlation between step stress data and life-test failures representing the main population is good. It is possible to use this quick test for lot acceptance and to design a proper voltage screening for the particular batch under test. The need for conventional burn-in testing would thus be reduced.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"NMOS Voltage Breakdown Characteristics Compared with Accelerated Life Tests and Field use Data\",\"authors\":\"O. Hallberg\",\"doi\":\"10.1109/IRPS.1981.362968\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Statistics on voltage-accelerated failures of 4K NMOS RAM's have been compared with accelerated life test data and with real field use data. It is concluded that it is possible to get long-term reliability information from fast overvoltage step stress tests such as 40 ms and 1.2 s dwell time per step. The correlation between step stress data and life-test failures representing the main population is good. It is possible to use this quick test for lot acceptance and to design a proper voltage screening for the particular batch under test. The need for conventional burn-in testing would thus be reduced.\",\"PeriodicalId\":376954,\"journal\":{\"name\":\"19th International Reliability Physics Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-04-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"19th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1981.362968\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"19th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1981.362968","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
NMOS Voltage Breakdown Characteristics Compared with Accelerated Life Tests and Field use Data
Statistics on voltage-accelerated failures of 4K NMOS RAM's have been compared with accelerated life test data and with real field use data. It is concluded that it is possible to get long-term reliability information from fast overvoltage step stress tests such as 40 ms and 1.2 s dwell time per step. The correlation between step stress data and life-test failures representing the main population is good. It is possible to use this quick test for lot acceptance and to design a proper voltage screening for the particular batch under test. The need for conventional burn-in testing would thus be reduced.
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