{"title":"湿度激活表面渗漏路径在T.O.箱式玻璃头","authors":"James Calderbank, P. Holloway","doi":"10.1109/IRPS.1981.362974","DOIUrl":null,"url":null,"abstract":"This paper reviews the analysis of exterior leakage paths causing failures of common 2N2222A transistors. The failure mechanism, exterior leakage paths activated in high humidity conditions on the surface of glass seals, is identified. The glass constituents which are responsible for this intermittent, sometime self-correcting failure mechanism are discussed and the method of conduction analyzed.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"87 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Humidity Activated Surface Leakage Paths on T.O. Case Style Glass Headers\",\"authors\":\"James Calderbank, P. Holloway\",\"doi\":\"10.1109/IRPS.1981.362974\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reviews the analysis of exterior leakage paths causing failures of common 2N2222A transistors. The failure mechanism, exterior leakage paths activated in high humidity conditions on the surface of glass seals, is identified. The glass constituents which are responsible for this intermittent, sometime self-correcting failure mechanism are discussed and the method of conduction analyzed.\",\"PeriodicalId\":376954,\"journal\":{\"name\":\"19th International Reliability Physics Symposium\",\"volume\":\"87 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"19th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1981.362974\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"19th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1981.362974","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Humidity Activated Surface Leakage Paths on T.O. Case Style Glass Headers
This paper reviews the analysis of exterior leakage paths causing failures of common 2N2222A transistors. The failure mechanism, exterior leakage paths activated in high humidity conditions on the surface of glass seals, is identified. The glass constituents which are responsible for this intermittent, sometime self-correcting failure mechanism are discussed and the method of conduction analyzed.
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