{"title":"大规模集成电路和超大规模集成电路器件的精密截面分析","authors":"Peter G. Angelides","doi":"10.1109/IRPS.1981.362985","DOIUrl":null,"url":null,"abstract":"This is a tutorial paper describing and illustrating a crosssectional procedure for LSI and VLSI devices. The significant results using this procedure are one to one measurements of circuit parameters and a very clear view of the crosssectioned circuit at any given point. It is thus possible to measure with ease dimensions in the 0.3 micron range using the light microscope.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"23 5","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Precision Crosssectional Analysis of LSI and VLSI Devices\",\"authors\":\"Peter G. Angelides\",\"doi\":\"10.1109/IRPS.1981.362985\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This is a tutorial paper describing and illustrating a crosssectional procedure for LSI and VLSI devices. The significant results using this procedure are one to one measurements of circuit parameters and a very clear view of the crosssectioned circuit at any given point. It is thus possible to measure with ease dimensions in the 0.3 micron range using the light microscope.\",\"PeriodicalId\":376954,\"journal\":{\"name\":\"19th International Reliability Physics Symposium\",\"volume\":\"23 5\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"19th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1981.362985\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"19th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1981.362985","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Precision Crosssectional Analysis of LSI and VLSI Devices
This is a tutorial paper describing and illustrating a crosssectional procedure for LSI and VLSI devices. The significant results using this procedure are one to one measurements of circuit parameters and a very clear view of the crosssectioned circuit at any given point. It is thus possible to measure with ease dimensions in the 0.3 micron range using the light microscope.
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