{"title":"Phase Dependent Voltage Contrast - An Inexpensive SEM Addition for LSI Failure Analysis","authors":"D. Younkin","doi":"10.1109/IRPS.1981.363007","DOIUrl":null,"url":null,"abstract":"A simple and inexpensive SEM voltage contrast technique has been developed which displays die-level logic-state information by distinguishing between in- and out-of-phase signals with respect to a reference signal. The technique as currently implemented also permits on-chip delay measurements down to 75 ns with ±10% resolution. Electron beam blanking is not required.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"19th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1981.363007","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A simple and inexpensive SEM voltage contrast technique has been developed which displays die-level logic-state information by distinguishing between in- and out-of-phase signals with respect to a reference signal. The technique as currently implemented also permits on-chip delay measurements down to 75 ns with ±10% resolution. Electron beam blanking is not required.