{"title":"相位相关的电压对比-一种廉价的SEM附加的LSI失效分析","authors":"D. Younkin","doi":"10.1109/IRPS.1981.363007","DOIUrl":null,"url":null,"abstract":"A simple and inexpensive SEM voltage contrast technique has been developed which displays die-level logic-state information by distinguishing between in- and out-of-phase signals with respect to a reference signal. The technique as currently implemented also permits on-chip delay measurements down to 75 ns with ±10% resolution. Electron beam blanking is not required.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Phase Dependent Voltage Contrast - An Inexpensive SEM Addition for LSI Failure Analysis\",\"authors\":\"D. Younkin\",\"doi\":\"10.1109/IRPS.1981.363007\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A simple and inexpensive SEM voltage contrast technique has been developed which displays die-level logic-state information by distinguishing between in- and out-of-phase signals with respect to a reference signal. The technique as currently implemented also permits on-chip delay measurements down to 75 ns with ±10% resolution. Electron beam blanking is not required.\",\"PeriodicalId\":376954,\"journal\":{\"name\":\"19th International Reliability Physics Symposium\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"19th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1981.363007\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"19th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1981.363007","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Phase Dependent Voltage Contrast - An Inexpensive SEM Addition for LSI Failure Analysis
A simple and inexpensive SEM voltage contrast technique has been developed which displays die-level logic-state information by distinguishing between in- and out-of-phase signals with respect to a reference signal. The technique as currently implemented also permits on-chip delay measurements down to 75 ns with ±10% resolution. Electron beam blanking is not required.
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