Proceedings of the International Conference on Multichip Modules最新文献_第9页

Boundary Scan Techniques in an Mcm-D Application Mcm-D应用中的边界扫描技术

Proceedings of the International Conference on Multichip Modules Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753554

S. C. Hilla

引用次数: 2

Mcm Substrate with High Capacitance 高电容的Mcm衬底

Proceedings of the International Conference on Multichip Modules Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753542

R. Kambe, R. Imai, T. Takada, M. Arakawa, M. Kuroda

引用次数: 17

A High-Performance Second-Generation Sparc Mcm 高性能第二代Sparc Mcm

Proceedings of the International Conference on Multichip Modules Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753568

D. Tuckerman, D. Benson, H. Moore, J. Horner, J. Gibbons

{"title":"A High-Performance Second-Generation Sparc Mcm","authors":"D. Tuckerman, D. Benson, H. Moore, J. Horner, J. Gibbons","doi":"10.1109/ICMCM.1994.753568","DOIUrl":"https://doi.org/10.1109/ICMCM.1994.753568","url":null,"abstract":"ROSS Technology, Inc., and nCHIP, Inc., have successfully produced a second-generation SPARC processor multichip module (MCM). Based on ROSS's hyperSPARC/sup TM/ architecture, the module sets a new standard for performance in the SPARC marketplace. The MCM is packaged in a 45mm-square 256-lead, ceramic quad flatpack carrier, and is footprint-compatible with ROSS' current SPARC MCM, the CYM6111. However, the new module runs at clock speeds in excess of 80 MHz, more than twice that of the CYM6111, and will offer 3-5 times the performance in most applications. The full module contains six CMOS chips: a CPU containing both integer and floating point ALUs, a cache controller/memory management unit, and four cache RAM chips. Each chip uses both 3.3 and 5.0 volt power supplies, so the MCM substrate incorporates a split power plane. The chips are interconnected using nCHIP's nC1000 substrate technology which incorporates aluminum interconnect, SiO/sub 2/ dielectric, and an integral decoupling capacitor. ROSS's multichip design strategy does not depend on massive integration or complex fabrication processes; similarly, the nCHIP nC1000 substrate process is based on a robust, IC-like technology. This combination provides excellent manufacturability and allows a fast production ramp into high volume.","PeriodicalId":363745,"journal":{"name":"Proceedings of the International Conference on Multichip Modules","volume":"131 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128234345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Active Silicon Substrate Multi-Chip Module Technology for Sensor Signal Processing and Control 传感器信号处理与控制的有源硅衬底多芯片模块技术

Proceedings of the International Conference on Multichip Modules Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753617

R. Pearson

引用次数: 1

A 50mhz Multichip Processor Module With Flip Chip Technology 采用倒装芯片技术的50mhz多芯片处理器模块

Proceedings of the International Conference on Multichip Modules Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753610

B. Miller, N. Volkringer, L. Su, Y.-M. Ting, M. Loo, R. Kumar, B. Smith

引用次数: 0

Evaluation of Non-Hermetic Coatings for Mcm Applications through Hast, 85/85 and Pct 通过Hast、85/85和Pct对Mcm应用的非密封涂层进行评价

Proceedings of the International Conference on Multichip Modules Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753572

C. Murphy, R. Kodnani, D. Peterson

引用次数: 5

An In-Situ Measurement Technique for Through-Plane Thermal Properties of Thin Dielectric Films 介质薄膜通过平面热性能的原位测量技术

Proceedings of the International Conference on Multichip Modules Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753573

T. Hodge, S. Bidstrup, P. Kohl, J. Lee, M. Allen

{"title":"An In-Situ Measurement Technique for Through-Plane Thermal Properties of Thin Dielectric Films","authors":"T. Hodge, S. Bidstrup, P. Kohl, J. Lee, M. Allen","doi":"10.1109/ICMCM.1994.753573","DOIUrl":"https://doi.org/10.1109/ICMCM.1994.753573","url":null,"abstract":"In MCM-D applications, interlayer dielectrics separate and insulate metal conductors to form a threedimensional interconnection structure. Due to the three-dimensional nature of these structures, the electrical and mechanical properties of the dielectric materials must be known in all directions for proper device design. The most commonly used polymer in microelectronics, polyimide, exists in formulations which have been shown to have a high degree of orientation and exhibit anisotropic properties. mechanical proprties of thin films is diftidt due to the high resolution required to measure the small thickness changes. Existing techniques require either stacked thin films or a single cast thick film of 100 micrometers or more to achieve dimensionat changes large enough to be measwabie.740 In addition, most existing techniques require removing a large area of film, if not the whole film, from a supporting substrate to perfom the measurement. These techniques neglect the effects of the dielectric-substrate interaction, such as Poisson's effm and adhesive effects. Since most MCM-D structures utilize thin films adhered to a substrate, the measured through-plane CTEs from these other techniques may not reflect the true thermal expansion expected in real devices. Measurement of through-plane","PeriodicalId":363745,"journal":{"name":"Proceedings of the International Conference on Multichip Modules","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122162398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Thermoplastic Die Attach for Hermetic Packaging 用于密封包装的热塑性模具附件

Proceedings of the International Conference on Multichip Modules Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753529

P. Harper

引用次数: 5

Non-Digital Extensions of an Embedded Chip MCM Technology 嵌入式芯片MCM技术的非数字扩展

Proceedings of the International Conference on Multichip Modules Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753591

R. Fillion, R.J. Wojnarowski, W. Bicknell, W. Daum, G. Forman

{"title":"Non-Digital Extensions of an Embedded Chip MCM Technology","authors":"R. Fillion, R.J. Wojnarowski, W. Bicknell, W. Daum, G. Forman","doi":"10.1109/ICMCM.1994.753591","DOIUrl":"https://doi.org/10.1109/ICMCM.1994.753591","url":null,"abstract":"The GE/Martin Marietta/Texas Instruments embedded chip multichip technology was developed for high performance digital circuits used in aerospace applications. The HDI process involves the placement of bare chips into cavities formed into a base substrate, lamination of a polymer dielectric film over the chips and the substrate, and the formation of vias and interconnect metallization on the polymer film. Multiple levels of interconnect are formed by repeating the film lamination, via formation and metallization steps. The direct metallization to the chip I/O pads eliminates the need for normal chip I/O wire bonds, TAB, or solder bumps. The elimination of these chip connections and the high electrical performance of the polymer/copper interconnect structure result in the superior speed of such embedded chip MCMs. The technology also features high current carrying capability, high reliability in harsh mechanical and thermal environments and high thermal dissipation capability. The inherently high performance features of the embedded chip MCM technology have been exploited in non-digital electronics such as: mixed analog and digital circuits, power conversion and conditioning, microwave transmit and receive (TIR) modules, and optoelectronic modules. The ability of embedded chip HDI to fully shield high frequency devices in a module from other components and the complete elimination of the discontinuities associated with chip I/O attach, makes it ideal for mixed mode operation. Current non digital examples making use of this unique capability are a >400 MHz GaAs 128 X 128 crosspoint switch, a 50 Watt, 85% efficient DC-to-DC converter, a 14 Bit voice / data modem circuit, and a 54 channel 12 Bit instrumentation A/D converter module. All of these unique examples of non-digital extensions of the embedded chip HDI MCM interconnect process will be described along with their unique features, processing and/or structures.","PeriodicalId":363745,"journal":{"name":"Proceedings of the International Conference on Multichip Modules","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117340497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Interconnection Considerations for a Hybrid Mcm 混合Mcm的互连考虑

Proceedings of the International Conference on Multichip Modules Pub Date : 1994-04-13 DOI: 10.1109/ICMCM.1994.753566

J. Norén, P. Brofman

引用次数: 3