高电容的Mcm衬底

R. Kambe, R. Imai, T. Takada, M. Arakawa, M. Kuroda
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引用次数: 17

摘要

众所周知,薄膜电容器具有良好的电特性,因此常用于高频应用。不幸的是,在相对粗糙的共烧陶瓷表面上形成薄膜电容器也是非常困难的。我们研究了必须与共烧陶瓷表面直接接触的底部电容电极的平面化,以及高介电常数材料与低MCM陶瓷衬底之间的T.C.E.差的调节和控制。将薄膜电容器与MCM衬底相结合可以产生高频去耦电容器(具有可比共烧薄层氧化铝结构的100倍电容);节省空间,并显著提高性能优于传统的分立芯片电容器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Mcm Substrate with High Capacitance
It is well established that thin film capacitors have good electrical characteristics and for that reason are often used in high frequency applications. Unfortunately, it is also very difficult to form thin film capacitors on the relatively rough surface of cofired ceramics. We have investigated planarization of bottom capacitive electrodes which must make direct contact with a cofired ceramic surface, and adjustment and control of the T.C.E. difference between high dielectric constant material and the bass MCM ceramic substrate. Combining thin film capacitors with MCM substrates can result in high frequency decoupling capacitors (with 100X the capacitance of comparable cofired thin layer alumina constructions); space saving, and significant improvements in performance over conventional discrete chip capacitors.
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