Non-Digital Extensions of an Embedded Chip MCM Technology

R. Fillion, R.J. Wojnarowski, W. Bicknell, W. Daum, G. Forman
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引用次数: 7

Abstract

The GE/Martin Marietta/Texas Instruments embedded chip multichip technology was developed for high performance digital circuits used in aerospace applications. The HDI process involves the placement of bare chips into cavities formed into a base substrate, lamination of a polymer dielectric film over the chips and the substrate, and the formation of vias and interconnect metallization on the polymer film. Multiple levels of interconnect are formed by repeating the film lamination, via formation and metallization steps. The direct metallization to the chip I/O pads eliminates the need for normal chip I/O wire bonds, TAB, or solder bumps. The elimination of these chip connections and the high electrical performance of the polymer/copper interconnect structure result in the superior speed of such embedded chip MCMs. The technology also features high current carrying capability, high reliability in harsh mechanical and thermal environments and high thermal dissipation capability. The inherently high performance features of the embedded chip MCM technology have been exploited in non-digital electronics such as: mixed analog and digital circuits, power conversion and conditioning, microwave transmit and receive (TIR) modules, and optoelectronic modules. The ability of embedded chip HDI to fully shield high frequency devices in a module from other components and the complete elimination of the discontinuities associated with chip I/O attach, makes it ideal for mixed mode operation. Current non digital examples making use of this unique capability are a >400 MHz GaAs 128 X 128 crosspoint switch, a 50 Watt, 85% efficient DC-to-DC converter, a 14 Bit voice / data modem circuit, and a 54 channel 12 Bit instrumentation A/D converter module. All of these unique examples of non-digital extensions of the embedded chip HDI MCM interconnect process will be described along with their unique features, processing and/or structures.
嵌入式芯片MCM技术的非数字扩展
GE/Martin Marietta/Texas Instruments嵌入式芯片多芯片技术是为航空航天应用中使用的高性能数字电路而开发的。HDI工艺包括将裸芯片放置到形成基板的空腔中,在芯片和基板上层压聚合物介电膜,并在聚合物膜上形成通孔和互连金属化。通过形成和金属化步骤,通过重复薄膜层压形成多层互连。芯片I/O焊盘的直接金属化消除了正常芯片I/O线键、TAB或焊料凸起的需要。这些芯片连接的消除和聚合物/铜互连结构的高电性能导致这种嵌入式芯片mcm的优越速度。该技术还具有载流能力大,在恶劣的机械和热环境下具有高可靠性和高散热能力。嵌入式芯片MCM技术固有的高性能特性已经在非数字电子产品中得到了利用,例如:混合模拟和数字电路、功率转换和调理、微波发射和接收(TIR)模块以及光电模块。嵌入式芯片HDI能够完全屏蔽模块中的高频器件,使其不受其他组件的影响,并完全消除与芯片I/O连接相关的不连续,使其成为混合模式操作的理想选择。目前使用这种独特功能的非数字示例包括>400 MHz GaAs 128 X 128交叉点开关,50瓦,85%效率的dc - dc转换器,14位语音/数据调制解调器电路和54通道12位仪表a /D转换器模块。所有这些嵌入式芯片HDI MCM互连过程的非数字扩展的独特示例将与其独特的功能,处理和/或结构一起描述。
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