D. Lie, J. Kennedy, D. Livezey, B. Yang, T. Robinson, N. Sornin, C. Saint, L. Larson
{"title":"Circuit and System Design for a Homodyne W-CDMA Front-End Receiver RF IC","authors":"D. Lie, J. Kennedy, D. Livezey, B. Yang, T. Robinson, N. Sornin, C. Saint, L. Larson","doi":"10.1109/VDAT.2006.258114","DOIUrl":"https://doi.org/10.1109/VDAT.2006.258114","url":null,"abstract":"This paper discusses the RF circuit and system design considerations for W-CDMA homodyne receiver on NF, IIP2, IIP3, LO/TX leakage, I-Q mismatch, DC offsets, etc. A zero-IF receiver front-end SiGe BiCMOS IC is designed, packaged and thoroughly characterized by a set of system-level performance tests across the full frequency band of operation. The measured worst-case cascaded NF for the receiver IC across all channels is 4.3 dB at the max. gain mode, and the in-band/out-of-band IIP2 and IIP3 are +37/+93 and -16.5/+5 dBm, respectively. The I/Q channels exhibit a small mismatch in magnitude (<0.1dB) and in phase (<1deg) without calibration. The receiver RF front-end (i.e., LNA+VGA+ I/Q mixers) draws ~45mW. The system tests results on BER, P1dB, IM2, IM3, and desensing show that the RFIC meets all of the necessary parameters of W-CDMA receiver system specs at room temperature with margin, validating the RF IC block-level circuit design and providing valuable RF-SoC design insights","PeriodicalId":356198,"journal":{"name":"2006 International Symposium on VLSI Design, Automation and Test","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116814241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Gb/s CMOS 1-4th-rate CDR with Frequency Detector and Skew calibration","authors":"S. Tontisirin, R. Tielert","doi":"10.1109/VDAT.2006.258156","DOIUrl":"https://doi.org/10.1109/VDAT.2006.258156","url":null,"abstract":"A 1-2.25 Gb/s clock and data recovery (CDR) circuit using 1/4th-rate digital quadricorrelator frequency detector and skew-calibrated multi-phase voltage-controlled oscillator is presented. With 1/4th-rate clock architecture, the coil-free oscillator can have lower operation frequency providing sufficient low-jitter operation. Moreover, it is an inherent 1-to-4 DEMUX. The skew calibration scheme is applied to reduce phase offset in multi-phase clock generator. The CDR with frequency detector can have small loop bandwidth, wide pull-in range and can operate without the need for a local reference clock. This 1/4th-rate CDR is implemented in standard 0.18mum CMOS technology. It has an active area of 0.7 mm2 and consumes 100mW at 1.8V supply. The CDR has low jitter operation in a wide frequency range from 1-2.25 Gb/s. Measurement of bit-error rate is less than 10-12 for 2.25 Gb/s incoming data 27-1 PRBS, jitter peak-to-peak of 0.7 unit interval(UI) modulation at 10 MHz","PeriodicalId":356198,"journal":{"name":"2006 International Symposium on VLSI Design, Automation and Test","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126878384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Floorplanning Multiple Reticles for Multi-project Wafers","authors":"Meng-Chiou Wu, Shr-Cheng Tsai, Rung-Bin Lin","doi":"10.1109/VDAT.2006.258145","DOIUrl":"https://doi.org/10.1109/VDAT.2006.258145","url":null,"abstract":"Floorplanning chips in more than one reticle for multi-project wafers has not been investigated. In this paper, we propose two approaches to this problem. We first formulate this problem with preselected reticle sizes as a mixed-integer linear programming (MILP) model. We then propose a compatibility-driven B*-tree dissection search (CBTDS) heuristic for it. Experiments for floorplanning chips in two reticles show that the MILP model is too complex to render good results, while CBTDS is very effective and efficient. Compared to a naive solution, CBTDS obtains a floorplan that uses 37% fewer wafers","PeriodicalId":356198,"journal":{"name":"2006 International Symposium on VLSI Design, Automation and Test","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114726273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chin-Hsien Yen, Win-Ming Chang, Kuo-Hua Cheng, C. Jou
{"title":"A New Low Voltage CMOS Micromixer for 2.45GHz Applications","authors":"Chin-Hsien Yen, Win-Ming Chang, Kuo-Hua Cheng, C. Jou","doi":"10.1109/VDAT.2006.258179","DOIUrl":"https://doi.org/10.1109/VDAT.2006.258179","url":null,"abstract":"This paper presents a new low voltage CMOS micromixer for 2.45GHz applications, which operates at 1V supply voltage. The new low voltage CMOS micromixer topology modified from basic BJT micromixer uses coupling capacitors to feed the RF signal so as to bias the two transistors in RF stage separately with lower voltage. The charge injection method is also adopted to improve the conversion gain and linearity under low voltage operation. With a power consumption of 1.72 mW the measurement shows voltage gain of 8.28 dB, input 1dB compression point of -5.63 dBm and input third-order intercept point of 4.21 dBm","PeriodicalId":356198,"journal":{"name":"2006 International Symposium on VLSI Design, Automation and Test","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127782378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Efficient Hardware/Software Partitioning Approach for Embedded Multiprocessor Systems","authors":"Tzong-Yen Lin, Yu-Ting Hung, Rong-Guey Chang","doi":"10.1109/VDAT.2006.258167","DOIUrl":"https://doi.org/10.1109/VDAT.2006.258167","url":null,"abstract":"This paper presents an efficient hardware/software partitioning approach that target at embedded multiprocessor systems with time, area, and power constraints. Our approach is performed in two phases. In the partitioning phase, for an embedded system with p software components and q hardware components, recursive spectral bisection (RSB) has been used to partition an application program into n well-balanced and connected blocks with low communication cost. These blocks are mapped into software components and then tasks in software components will be moved to hardware components to meet the deadline constraint. In the scheduling phase, we derive an approach to reduce the system cost in connection with power and hardware area by exchanging tasks between software and hardware components. Experimental results show that our approach is effective for embedded multiprocessor systems","PeriodicalId":356198,"journal":{"name":"2006 International Symposium on VLSI Design, Automation and Test","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126389001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Low Power Mobile Camera Processor Design with SubLVDS Interface","authors":"C.L. Lee, K. Hsiao, Min-Chung Chou","doi":"10.1109/VDAT.2006.258111","DOIUrl":"https://doi.org/10.1109/VDAT.2006.258111","url":null,"abstract":"A mega pixel image signal processor (ISP) with low voltage differential serial interface is presented. subLVDS interface has lower voltage swing and lower power consumption advantages over a normal LVDS interface. Both subLVDS driver and receiver are implemented in this ISP chip to reduce the I/O pin count. A synchronization layer is designed to cover both non-compressed and compressed image data transfer on the high-speed serial data link. This chip is designed with a pure logic process in 0.18 mum CMOS technology. The subLVDS driver can operate at a transfer rate up to 625Mbps","PeriodicalId":356198,"journal":{"name":"2006 International Symposium on VLSI Design, Automation and Test","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131099268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J.P. Liu, P. R. Verma, S. Chu, S.Q. Zhang, W. Loh, K. Leong, H.L. Siew, D. Sohn, L. Hsia, S. Decoutere, M. Xu, K. van Wichelen, R. Loo
{"title":"Impact of Interstitial Carbon on Base Current Ideality in SiGe:C Heterojunction Bipolar Transistors","authors":"J.P. Liu, P. R. Verma, S. Chu, S.Q. Zhang, W. Loh, K. Leong, H.L. Siew, D. Sohn, L. Hsia, S. Decoutere, M. Xu, K. van Wichelen, R. Loo","doi":"10.1109/VDAT.2006.258181","DOIUrl":"https://doi.org/10.1109/VDAT.2006.258181","url":null,"abstract":"We show that the incorporation of interstitial C impacts the base current ideality in SiGe:C HBTs fabricated in 0.18mum SiGe BiCMOS process. SiGe:C epi layers with the same structural and processing parameters but with less interstitial C obtained by adjusting growth conditions have better base current ideality. It is observed that the interstitial C in the emitter/base depletion region, rather than that in the neutral base region, leads to the base current non-ideality. Optimization of C substitution and profile leads to less recombination as well as good B diffusion control thus good device performance","PeriodicalId":356198,"journal":{"name":"2006 International Symposium on VLSI Design, Automation and Test","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133515033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yun-Hsueh Chuang, Shao-Hua Lee, Chien-Feng Lee, S. Jang, M. Juang
{"title":"A New CMOS VCO Topology with Capacitive Degeneration and Transformer Feedback","authors":"Yun-Hsueh Chuang, Shao-Hua Lee, Chien-Feng Lee, S. Jang, M. Juang","doi":"10.1109/VDAT.2006.258116","DOIUrl":"https://doi.org/10.1109/VDAT.2006.258116","url":null,"abstract":"This paper presents a new voltage controlled oscillator (VCO) topology for radio frequency operation. The low phase noise differential CMOS VCO uses capacitive degeneration and transformer coupling between the gate and source of the negative conductance transistor. An on chip transformer in positive feedback is used to increase the voltage swing in resonator and to improve the phase noise. The VCO is tunable from 2.85 GHz to 3.35 GHz with 16% tuning range, and has been fabricated with 0.18mum CMOS technology. The measured phase noise at 1 MHz offset is -119 dBc/Hz at the operation frequency of 3 GHz. The circuit draws 10 mA from a 1.8V supply","PeriodicalId":356198,"journal":{"name":"2006 International Symposium on VLSI Design, Automation and Test","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116461228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Thermal-Driven Interconnect Optimization by Simultaneous Gate and Wire Sizing","authors":"Yi-Wei Lin, Yao-Wen Chang","doi":"10.1109/VDAT.2006.258147","DOIUrl":"https://doi.org/10.1109/VDAT.2006.258147","url":null,"abstract":"Temperature, as well as electromigration (EM), area, timing, and power, has become one of the most important concerns in nanometer circuit design. In this paper, we model the effects of thermal on both interconnect delay and EM reliability. Applying the least square estimator (LSE) method, we develop a posynomial formula to approximate interconnect temperature and present an algorithm to optimally solve the simultaneous interconnect temperature, EM, area, delay, and power optimization by sizing circuit components based on Lagrangian relaxation. Experimental results show that our algorithm is very effective, efficient, and economical","PeriodicalId":356198,"journal":{"name":"2006 International Symposium on VLSI Design, Automation and Test","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125964104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Novel High-Density Data-Retention Power Gating Structure Using a Four-Terminal Double-Gate Device","authors":"Keunwoo Kim, K. Das, C. Chuang","doi":"10.1109/VDAT.2006.258119","DOIUrl":"https://doi.org/10.1109/VDAT.2006.258119","url":null,"abstract":"This paper presents a new power gating structure with robust data retention capability using only one single double-gate device to provide both power gating switch and virtual supply/ground diode clamp functions. The scheme reduces the transistor count, area, and capacitance of the power gating structure, thus improving circuit performance, power, and leakage. The scheme is compared with the conventional power gating structure via mixed-mode physics-based two-dimensional numerical simulations. Analysis of virtual ground bounce for the proposed scheme is also presented","PeriodicalId":356198,"journal":{"name":"2006 International Symposium on VLSI Design, Automation and Test","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127455823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}