间隙碳对SiGe:C异质结双极晶体管基极电流理想性的影响

2006 International Symposium on VLSI Design, Automation and Test Pub Date : 2006-04-26 DOI:10.1109/VDAT.2006.258181

J.P. Liu, P. R. Verma, S. Chu, S.Q. Zhang, W. Loh, K. Leong, H.L. Siew, D. Sohn, L. Hsia, S. Decoutere, M. Xu, K. van Wichelen, R. Loo

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引用次数: 2

摘要

我们发现，在0.18 μ m SiGe BiCMOS工艺中加入间隙C会影响SiGe:C HBTs的基极电流理想性。调整生长条件得到的结构和工艺参数相同但间隙C较小的SiGe:C外延层具有较好的基极电流理想性。我们观察到，基极损耗区的间隙C，而不是中性基极区的间隙C，导致基极电流的非理想性。通过优化C取代和构型，可以减少复合，控制B扩散，从而提高器件性能

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Impact of Interstitial Carbon on Base Current Ideality in SiGe:C Heterojunction Bipolar Transistors

We show that the incorporation of interstitial C impacts the base current ideality in SiGe:C HBTs fabricated in 0.18mum SiGe BiCMOS process. SiGe:C epi layers with the same structural and processing parameters but with less interstitial C obtained by adjusting growth conditions have better base current ideality. It is observed that the interstitial C in the emitter/base depletion region, rather than that in the neutral base region, leads to the base current non-ideality. Optimization of C substitution and profile leads to less recombination as well as good B diffusion control thus good device performance

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2006 International Symposium on VLSI Design, Automation and Test

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