K. Beyzavi, R. Linke, G. Devlin, I. Ogura, T. Numai, K. Kasahara
{"title":"Modeling of VSTEP Switching Energy Variation with Input beam Size","authors":"K. Beyzavi, R. Linke, G. Devlin, I. Ogura, T. Numai, K. Kasahara","doi":"10.1109/SARNOF.1993.657963","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657963","url":null,"abstract":"","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115577446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Tip-chip Bonding: Solder Bond Assembly To Ends Of Waveguides","authors":"W. K. Chan, A. Yi-yan, R. Bhat","doi":"10.1109/SARNOF.1993.657955","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657955","url":null,"abstract":"","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114886448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design and Characterization of a Novel Fiber Optic Coupling Device for Data Communication Applications","authors":"A. J. Heiney, C. Jiang, W. H. Reysen","doi":"10.1109/SARNOF.1993.657954","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657954","url":null,"abstract":"Many of the functions necessary for fiber optic coupling in data link\u0000 applications have been incorporated into one opto-mechanical device\u0000 called a lens/receptacle. The lens enables assembly of data links with\u0000 reduced parts count, simplified assembly, lower cost, and streamlined\u0000 testing with many performance advantages. The packaging consistent\u0000 with this lens can accommodate data rates up to 600 Mb/s. This\u0000 paper outlines the design of the lens/receptacle while highlighting\u0000 the performance benefits of the package as a whole. Performance\u0000 results presented are on pre-production prototypes operating at 125\u0000 Mb/s in the long wavelength region centered around 1330 nm.","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133784195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Status and Directions in Microwave Packaging","authors":"B. Berson","doi":"10.1109/SARNOF.1993.657965","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657965","url":null,"abstract":"Introduction Over the past several years there have been dramatic increases in the performance and decreases in the cost of microwave devices. There have not, however, been accompanying changes in microwave packaging. The result is that packaging is the major bottleneck in meeting the cost and performance objectives of military, consumer, and clommercial systems. In this talk I will review the status of packaging and suggest directions that will lead to higher levels of performance and lower cost.","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121829907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electrical and Optical Output Characteristics of InP/InGaAsP pnpn Structures Grown via LPE","authors":"W. Buchwald, Jian H. Zhao, Long D. Zhu","doi":"10.1109/SARNOF.1993.657976","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657976","url":null,"abstract":"Gated p(1nP)-n(InP)-p(1nGaAsF’)-n(1nP) struchires have been fabricated via LPE. These devices are shown to have gate controlled, thyristor like, DC switching characteristics as well as gate controlled optical output at 940nm and 1280nm. The switching characteristics of these devices are also reported. Introduction The fabrication of PNPN devices from III-V compounds has recently received much interest due to the possibility of using these devices not only as optoelectronic power control elements [14], but also for applications such as dynamic memories [ 5 ] , two and three terminal optoelectronic switches [6,7]. optical amplifiers [SI and negative differentialresistancelasers,(NDRLaser) 191. Todate,researchinthis typeofsmcturehasbeencenteredontheGaAs/ AlGaAs matenal system, however, due to interest in optoelectronic devices operating at 1.3 and 1 . 5 5 ~ , the I@/ InGaAsP system is also receiving interest r8.101. At present, with respect to the InPDnGaAsP system, only two terminal devices have been successfully fabricated. This work presents the successful fabrication of an InPflnGaAsP based, three terminal pnpn optothynstor. The device presented here combines a double heterosmcture (DH) laser structure with a conventional thyristor into a single device. Negative differential resistance switching, with a maximum gate controlled breakover voltage of approximately 8V, is reported. An increase in the spontaneous emission of light at both 1.3 and 0 . 9 3 ~ is observed upon device switching from the high impedance OFF state to the low impedance ON state, suggesting the possibility of laser output when the device is fabricated into a suitable laser cavity. Measmments of the dynamic switching reveal device tum-on to be composed of a delay time followed by a more rapid (20011s) switching to the low impedance state. The switching delay time was also found to decrease with an increase in the gate trigger current. An anmalous feature of decrease in optical output as a function of device switching at high gate current is also reported. Device Fabrication Figure 1 shows the device smctme used for this work. The substrate was doped with Sn while the liquid phaseepitaxy (LPE) layernandp-typedopantswereTeandZnrespectively. TheInGaAsPlayerwas grown to produce spontaneous emission of light at a wavelength of 13OOnm. SIMS measurements were used to calibrate the layer t 500pm* I--54OplTl-i 9 o o p m F 920pm Cathode 58Ovmn InP 3.0pm 3.0x1017cm-3","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"22 8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123421295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Mersereau, C. Nijander, W. Townsend, A. Feldblum
{"title":"Fabrication of fused silica microlens arrays","authors":"K. Mersereau, C. Nijander, W. Townsend, A. Feldblum","doi":"10.1109/SARNOF.1993.657948","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657948","url":null,"abstract":"Microlenses and microlens arrays can be applied to optical power transfer problems such as coupling light from a laser into a fiber, improving the sensitivity of detector arrays, and free-space optical interconnect. We report fabrication of diffraction-limited refractive microlens arrays in fused silica (SiO,) with diameters ranging from 1Op.m to 400p.m and f-numbers of F/1.5 to F/5. Our microlenses are made by melting photoresist into lens shapes and etching these into the SiO, substrate using reactive ion etching.","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122811633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Huff, M. Upton, P. Sherhatt, P. Barker, R. McVay, T. Stanley, R. Brown, R. Lomax, T. Mudge, K. Sakallah
{"title":"A High Performance GaAs Microprocessor","authors":"T. Huff, M. Upton, P. Sherhatt, P. Barker, R. McVay, T. Stanley, R. Brown, R. Lomax, T. Mudge, K. Sakallah","doi":"10.1109/SARNOF.1993.657973","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657973","url":null,"abstract":"A 32-bit RISC microprocessor has been fabricated in a 0.GaAs DCFL process. It includes 16O.ooO transistors on a 13.9 x 7.8mm2 chip, and dissipates 2rlW. The chip contains an ALU. 32x32 Rgister file, 4word write buffer, small on-chip I-cache, and suppon for off-chip instruction and data caches.","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127900930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Microwave Power Applications of GalIium Arsenide Heterojunction Bipolar Transistors","authors":"A. Gupta","doi":"10.1109/SARNOF.1993.657970","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657970","url":null,"abstract":"applications have shown marked improvements in output power and power added efficiency (PAE) during recent years (1,2]. HBTs exhibiting efficiencies in excess of 50% and power densities up to 4 waWmm (CW) at X-band have been reported (2). Under pulsed operation, an increase in output power by -3 dB has been observed. As a consequence of these impressive results, HBTs are currently being considered as replacements for MESFETs in the next generation solid state power amplifiers requiring increased power and efficiency from modules ofthe same size as those in use today. This paper will discuss electrical and thermal design of power HBTs and present the performance of a very high efficiency 8-14GH2, 1 W HBT amplifier [3]. This amplifier represents the state-of-the-art in PAE over this band. GaAslAIGaAs heterojunction bipolar transistors (HBTs) designed for microwave power","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127105216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High Efficiency Chromatically Compensated Computer Generated Holographic Optics for Coupling of 1.3 Micron Laser Diodes to Single Mode Fiber","authors":"T. Bowen, R. Roff, J. Rowlette, J. Stack","doi":"10.1109/SARNOF.1993.657953","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657953","url":null,"abstract":"An F/1 collimating element for a laser diode was designed with the recently developed Radially Symmetric Iterative Discrete On-axis (RSIDO) encoding method. The RSIDO method is similar to the previously reported[ 1,2] ID0 method. However, the RSIDO method can be used to achieve higher diffraction efficiencies for design of Holographic Optical Elements (HOE's)[3]. During the design process fabrication constraints such as minimum feature size limitations are employed. Iterative optimization techniques such as simulated annealingare employed to find the near-optimum CGH transmittance within the limitations of the fabrication consuaints.","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"348 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132499232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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