{"title":"High-Speed Photovoltaic Response of P-Type 6H-SiC","authors":"S. E. Saddou, P. Cho, J. Goldhar","doi":"10.1109/SARNOF.1993.657978","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657978","url":null,"abstract":"The optoelectronic properties of 6-H silicon carbide (6H-Sic) were investigated using a lateral photoconductive switch. This material displayed a high-speed photovoltaic response to picosecond laser excitations: measurement-limited subnanosecond photovoltaic response times were observed for laser photon energies less than the 6H-Sic band gap energy. The photovoltaic response. as a function of laser wavelength and beam spatial position within the switching gap, was measured, along with the photo-catrier lifetime and optical absorption coefficient. The data show that the measured photovoltage is a sensitive function of both spatial position and optical absorption depth. Hypothetical arguments are presented that qualitatively explain the observed photovoltaic effects.","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128945311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"An analytical model to simulate electrical characteristics of resonant tunneling transistor lasers","authors":"R. Lacomb, F. Jain","doi":"10.1109/SARNOF.1993.657974","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657974","url":null,"abstract":"An analytical resonant tunneling heterostructure transistor model is presented which calculates the collector and base current densities for various device structures having arbitrary doping profiles and material compositions. Comparison between the model and experimental data on AlGaAs-GaAs transistors is presented The application of the model for designing resonant tunneling transistor lasers is also discussed.","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130779534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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