{"title":"Recent Advances in Integrated AO Switches for WDM Applications","authors":"J. Baran, D. Smith, A. d'Alessander","doi":"10.1109/SARNOF.1993.657962","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657962","url":null,"abstract":"","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115361849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Poguntke, J. Soole, A. Scherer, H. Leblanc, C. Caneau, R. Bhat, M. Koza
{"title":"The MAGIC Laser: a Monolithic WDM Source","authors":"K. Poguntke, J. Soole, A. Scherer, H. Leblanc, C. Caneau, R. Bhat, M. Koza","doi":"10.1109/SARNOF.1993.657957","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657957","url":null,"abstract":"We discuss the Multi-stripe Array Grating Integrated Cavity (MAGIC) Laser: a multi-wavelength laser formed by monolithically integrating a diffraction grating and an array of active stripes in a planar semiconductor waveguide cavity. Recent results will be presented. Introduction There is currently considerable interest in the telecommunications arid computing industries at developing networks that use many different wavelengths. Not only for increasing the capacity of point-to-point links, but also for broadcast systems and, most interestingly, in multi-wavelength optical networks where wavelength is effectively used as an effective extra \"dimension\". Whatever the ultimate network envisaged, multi-wavelength systems will only become widely deployed if sources and wavelength-demultiplexing detectors can be developed that have precise factory-defined wavelengths and high field-reliability, and can also be: manufactured at low cost. This talk discusses a new type of multi-wavelength source the MAGIC, or Multi-stripe Array Grating Integrated Cavity Laser that we believe has the potential to fiilfill these criteria. The MAGIC Laser The device structure is illustrated schematically in Figure 1. It is based on a planar WAnGaAsPAnP waveguide. At one end a number of active laser stripes have been integrated, and at the other a fbcussing vertical-walled diffraction grating has beem etched through the guide layers [ 11. If one stripe is injection pumped, the spontaneous radiation emitted into the planar waveguide at one end is reflected at one wavelength by the grating and lasing occurs at the wavelength. different stripes cause lasing at different wavelengths. The integratedl laser is acting in a similar fashion to a conventional extemal cavity laser, with the bulk optic 1e:ns and grating of the latter replaced by the etched grating.","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122180346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Photon Recycling for Threshold Reduction in Semiconductor Lasers","authors":"S. Chan, R. Linke","doi":"10.1109/SARNOF.1993.657960","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657960","url":null,"abstract":"Photon recycling. or the re-absorption of spontaneously emitted photons by an active gain mediuni can, in principle, reduce a laser’s threshold to zero even when the number of cavity modes is large. We calculate the magnitude of this effect for the current VCSELD device structures and discuss appropriate conditions for effective recycling.","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133878770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Dutta, H. Shen, M. Wraback, J. Pamulapati, W. Chang, J. Kosinski
{"title":"A Novel High Contrast Multiple Quantum Well Spatial Light Modulator Based on Polarization Rotation","authors":"M. Dutta, H. Shen, M. Wraback, J. Pamulapati, W. Chang, J. Kosinski","doi":"10.1109/SARNOF.1993.657961","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657961","url":null,"abstract":"Prior research on multiple quantum well (MQW) spatial light modulators (SLM) has concentrated on amplitude modulation, relying on a sufficient difference in the absorption coefficient between the on/off states at the operating wavelength to achieve useful contrasts.","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115702044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High Speed Microwave and Optoelectronic Devices","authors":"L. Eastman","doi":"10.1109/SARNOF.1993.657968","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657968","url":null,"abstract":"Modulation-doped field effect transistors (MODFET's) have become the most highly developed microwave and millimeter wave semiconductor devices. Using pseudomorphic InyGal-yAs channels, with y 5 .25 and atomic planar doping in the Alfial-xAs barriers, with x 5 -30 high frequency, high power, and high efficiency have been achieved on .GaAs substrates. Using InyGal-yAs channels, with y = .53 or somewhat higher, and atomic planar doping in the InxAll-xAs barrier, with x 1. .52, very high frequency and very low noise performance has been achieved on InP substrates. In such structures there is a potential step in the conduction band, A E C , which confines an electron sheet to the low bandgap material, forming a dipole with the donors, in the larger bandgap barrier, separated by a thin spacer layer from the electrons.","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128565250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Transit Time and RC Time Constant Trade-offs in MSM Photodetectors","authors":"B. Nabetl, L. Lioul, A. Paolella","doi":"10.1109/SARNOF.1993.657977","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657977","url":null,"abstract":"Abstract: The speed of response of Metal-Semiconductor-Metal (MSM) devices is determined by both the RC time constant and transit time of the optically generated carriers. A trade-off exists between these two parameters; reduction of transit time will increase the RC time constant, hence miniaturization of dimensions will not always increase speed of response. We have derived expressions which show that given the total available area, and minimum geometry allowed by the technology, what is the optimal design, both in terms of rise time and gain-bandwidth product, of the detector. This allows substantial improvement in device response with no processing penalty.","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"389 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127834603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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