1993 IEEE Princeton Section Sarnoff Symposium最新文献

{"title":"Linearization of a Laser/Optical Communication Link","authors":"D. Guerieri, A. Katz","doi":"10.1109/SARNOF.1993.657975","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657975","url":null,"abstract":"A predistortion linearizer for improving the harmonic distortion (HD) and intermodulation distortion (IMD) of an AT&T 215-Type Astrotec Laser Module is presented. This linearizer employs a single passive GaAs MESFET nonlinear element. Improved laser linearity is important for CATV applications. When the linearizer was mated with the laser, a reduction in IMD of 14 dB was achieved.","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"7 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120825813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Opto-Mechanical Alignment and Assembly of 2D-Array Components","authors":"N. Basavanhally","doi":"10.1109/SARNOF.1993.657949","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657949","url":null,"abstract":"Free space optical interconnection systems require such elements as fiber input array, microlens arrays, bulk optics and bi-stable elements like self-electrooptic effect devices (SEEDS). In this talk, we will present the opto-mechanical challenges that are presented during design and fabrication of fiber input array, and alignment and attachment of microlens arrays to fiber bundle and to the SEED array devices.","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"172 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113986088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Laser Welding for Optoelectronic Applications","authors":"R. J. CoyIe, P. P. Solan","doi":"10.1109/SARNOF.1993.657956","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657956","url":null,"abstract":"Pulsed laser welding is a specialty joining technique used in optoelectronic packaging to produce precision spot welds for maintaining optical alignments and overlap seam welds for hermetic sealing. The laser technique produces minimal thermal distortion, and provides accurate weld fusion zone placement and design flexibility for manufacturing. This paper discusses the technology in terms of alignment and joining criteria, laser techniques, and technical guidelines for laser materials processing.","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123229187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Commercial Applications Of GaAs MMICs","authors":"C. Huang","doi":"10.1109/SARNOF.1993.657969","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657969","url":null,"abstract":"Direct Broadcast Satellite (DBS) Cable Television ( C A W High End Broadcast Television (TVNCR) Synchronous Optical Network (SONET) Cellular Mobile Telephone (CMT) Personal Communication System (PCS) Wireless Private Branch Exchange (WPBX) Residential Cordless Phone Wireless Local Area Network (\"LAN) C-band or Ku-band 45 550 MHz 55 900 MHz 50 MB/s to 2,488 h.iB/s 800 MHz 1,800 MHz 900, 1800 MHz 900 MHz 900,2400 MHz","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116328386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Models for Long Bond Wires and Large Multi-port Capacitors","authors":"Y. Tkachenko, C. Wei, J.C.M. Hwang","doi":"10.1109/SARNOF.1993.657966","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657966","url":null,"abstract":"Analytical modeling has been performed on bond wires and multi-port capacitors and has been compared with electromagnetic simulation and microwave measurements. A transmission line model and a Green's function capacitor model were found to be the most accurate and efficient. INTRODUCTION For high-frequency and high-power integrated circuit simulation, accurate and efficient models are needed for bond wires and multi-port capacitors with dimensions approaching a significant fraction of the wawelength. Previously reported lumped [1,2,3] and distributed [4] bond wire models were found inadequate for such large and complicated geometries. Distributed multi-port capacitor models were simply non-existent. RESULTS To develop our own model, the characteristics of 25 pm diameter Au wires was simulated using em, a 3D full-wave electromagnetic simulator from Sonnet. The simulation was performed on symmetrical and non-symmetrical wires 1 to 4 mm long and 0.3 to 1.5 mm in span. Wire span is defined as the ldistance between the bonding pads. Figure 1 shows that for short Wires the simulated characteristics agree with the measured results but not with those calculated by the formula in reference [ 11. With the em simulation validated, LCR and transmission line models (Figure 2) were then extracted from the simulated S-parameters using EEsof's LIBRA program. Figure 3 shows that the extracted wire inductance values were lower than any existing formula would predict. With an empirical expression, the wire inductance can be expressed as: L(nHl= -0.15 + t?.46S+ 0.69H, where S and H are wire span and height in mm. It was found that a similar expression can not be written using only the total wire length. For the wires located above substrates with E,= 140 the extracted Laand Eaparameters of the transmission line model are shown in Figures 4 and 5 . Figure 6 shows that for long wires the LCR model is valid only up to approximately 16 GHz, while the transmission line model agrees with the em simulation at aJ frequencies. Multi-port capacitors can also be simulated using em. however, it is rather time consuming and leaves no room for optimization if the capacitor is a part of a larger circuit. Another drawback is the absence of tic analysis capability making large-signal analysis impossible. To develop our own model, we iusume the current density in the port area is uniform and apply an open boundary condition: dV/dn=O. As a result, the impedance matrix of a N-port circuit is given as: where G is the Green's function. For a rectangular pattern shown in Figure 7: 7r 7r k,=m-, kn-nk 2 = p e u , ( , , E , = l for m,n=O, otherwise .$,,.$,=fi. a b'","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129705032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Silicon-based laser sub-assembly","authors":"W. M. MacDonald, R. Fanucci, G. Blonder","doi":"10.1109/SARNOF.1993.657950","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657950","url":null,"abstract":"Silicon is used as a packaging medium to integrate a laser, lenses, and a back facet monitor into a compact sub-assembly suitable for low-cost laser packages. The sub-assembly consists of separate laser and detector/optics submounts made of silicon. Only a single axis alignment is required during assembly to align the lenses ( 3 0 0 ~ diameter sapphire spheres) with the laser active area. In a single lens configuration, the integrated sub-assembly had 25% coupling efficiency into single-mode fiber compared to 30% maximum coupling efficiency achieved on the optical bench. Coupling efficiencies of the integrated sub-assembly to 50pm multi-mode fiber greater than 70% were achieved. The effective numerical aperture of the back facet monitor in the sub-assembly was greater than 0.7.","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127043152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Laser-Assisted InP Via Etching For Microwave Device and Circuit Applications","authors":"O. Ghandour, R. Scarmozzino, R. Osgood","doi":"10.1109/SARNOF.1993.657967","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657967","url":null,"abstract":"There is a widespread interest in developing improved via hole etching techniques due to the importance of vias, especially in the fabrication of relatively high density MMIC's (Monolithic Microwave Integrated Circuits) and millimeter-wave circuits. Conventional dry etching techniques are not suitable in this application because of their extremely low etch rates in In-based compounds. Current technology uses a process for etching vias in GaAs microwave device structures based on a chemical etching technique' which produces low aspect ratio vias, malung it difficult to achieve the close spacing required by microwave circuits. High aspect ratio vias have been previously achieved using laser assisted photoelectrochemical etching-', however, the etch rates were very slow, rendering the process industrially impractical. To date there has not been any information on an industrially viable via etching technique for microwave and millimeter-wave applications.","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122290934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Microwave SPICE Model For Double Heterojunction Bipolar Transistors","authors":"C. Wei, B. Sugeng, J.C.M. Hwang","doi":"10.1109/SARNOF.1993.657971","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657971","url":null,"abstract":"A SPICE model for Double-Heterojunction Bipolar Transistors@HBTs) has been developed which can account for bias-dependent barrier effects of both the emitter and collector junctions. The simulated dc and microwave performances agree well with the measured data. Introduction InP-based HBTs are promising microwave power devices mainly due to their better thermal conductivity, current gain, and carrier transport than that of Gas-based devices[l]. Incorporating a broad-band collector spacer layer the device shows a higher breakdown voltage, typically 11 V, which is essential for power operation. Recently, we demonstrated the first microwave power operation of an InP/InGaAs/InP double heterojunction bipolar transistor @HBT)[2]. For DHBT optimization and circuit application, it is necessary to develop a model[3] that can account for bias-dependent barrier effects at both emitter and collector junctions. In this paper, we present a SPICE model which is based on a physical model of the devices. DC and microwave small-signal as well as large signal behaviors are simulated and compared with the experimental results. The good agreement between the two confirms the validity of the model. Device Model Figure 1 shows the banddiagram of two types of DHBTs to be modeled. They are: a DHBT with an undoped InGaAs spacer layer at the C-B junction (type I) and a DHBT with n'-InP layer at the InP collector region (type 11). DC and RF transport equations for a DHBT have been derived in the literature[4,5], with the assumption that the base transport is diffusive and the injection via junction barriers is dominated by thermionic emission. We have derived a small-signal admittance matrix based on a small-signal analysis. Its equivalent circuit was obtained from a zero-pole analysis. The details will be presented elsewhere. i","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131485481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dynamic of Semiconductor Lasers with External Cavity","authors":"Tsang-Der Ni, Xiangdong Zhang, A. Daryoush","doi":"10.1109/SARNOF.1993.657959","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657959","url":null,"abstract":"A harmonic conversion approach is presented for the enhancement of the dynamic of semiconductor laser. By efficient transfer of power to the desired harmonic of a directly modulated semiconductor laser diode, the modulation bandwidth will be extended. The focus of this study is a laser diode with an external cavity, of which the resonant frequency matches to the fourth harmonic of the modulation signal. The number of modes of the laser with optical feedback is increased as the extemal cavity modes matches up with the Fabry-Perot (cavity modes. The experimental results show that the fourth harmonic is enhanced by =23dB from the case of without feedback. However, this harmonic enhancement approach will ble confined by the laser’s nonlinear characteristics under very high modulation index.","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121030320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two-Section Gain-Levered Tunable Distributed Feedback Laser with Active Tuning Section","authors":"G. Griffel, R. Lang, A. Yariv","doi":"10.1109/SARNOF.1993.657958","DOIUrl":"https://doi.org/10.1109/SARNOF.1993.657958","url":null,"abstract":"A composite cavity semiconductor laser structure that consists of two active (gain) sections is analyzed. One of the sections has a grating corrugation, while the other is flat. The operation of the device is enhanced by utilizing the gain-lever effect. A round-trip analysis is combined with the rate equations pertinent for this structure to study the characteristics of the device. The performance of the device is compared to that of a similar case without the gain lever. It is shown that, utilizing the gain-lever effect, improved operation in terms of tuning range, modulation efficiency, and output power control can be obtained. >","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"678 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121997790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}