{"title":"p型6H-SiC的高速光伏响应","authors":"S. E. Saddou, P. Cho, J. Goldhar","doi":"10.1109/SARNOF.1993.657978","DOIUrl":null,"url":null,"abstract":"The optoelectronic properties of 6-H silicon carbide (6H-Sic) were investigated using a lateral photoconductive switch. This material displayed a high-speed photovoltaic response to picosecond laser excitations: measurement-limited subnanosecond photovoltaic response times were observed for laser photon energies less than the 6H-Sic band gap energy. The photovoltaic response. as a function of laser wavelength and beam spatial position within the switching gap, was measured, along with the photo-catrier lifetime and optical absorption coefficient. The data show that the measured photovoltage is a sensitive function of both spatial position and optical absorption depth. Hypothetical arguments are presented that qualitatively explain the observed photovoltaic effects.","PeriodicalId":355387,"journal":{"name":"1993 IEEE Princeton Section Sarnoff Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-Speed Photovoltaic Response of P-Type 6H-SiC\",\"authors\":\"S. E. Saddou, P. Cho, J. Goldhar\",\"doi\":\"10.1109/SARNOF.1993.657978\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The optoelectronic properties of 6-H silicon carbide (6H-Sic) were investigated using a lateral photoconductive switch. This material displayed a high-speed photovoltaic response to picosecond laser excitations: measurement-limited subnanosecond photovoltaic response times were observed for laser photon energies less than the 6H-Sic band gap energy. The photovoltaic response. as a function of laser wavelength and beam spatial position within the switching gap, was measured, along with the photo-catrier lifetime and optical absorption coefficient. The data show that the measured photovoltage is a sensitive function of both spatial position and optical absorption depth. Hypothetical arguments are presented that qualitatively explain the observed photovoltaic effects.\",\"PeriodicalId\":355387,\"journal\":{\"name\":\"1993 IEEE Princeton Section Sarnoff Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-03-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 IEEE Princeton Section Sarnoff Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SARNOF.1993.657978\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 IEEE Princeton Section Sarnoff Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SARNOF.1993.657978","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The optoelectronic properties of 6-H silicon carbide (6H-Sic) were investigated using a lateral photoconductive switch. This material displayed a high-speed photovoltaic response to picosecond laser excitations: measurement-limited subnanosecond photovoltaic response times were observed for laser photon energies less than the 6H-Sic band gap energy. The photovoltaic response. as a function of laser wavelength and beam spatial position within the switching gap, was measured, along with the photo-catrier lifetime and optical absorption coefficient. The data show that the measured photovoltage is a sensitive function of both spatial position and optical absorption depth. Hypothetical arguments are presented that qualitatively explain the observed photovoltaic effects.
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