高性能砷化镓微处理器

1993 IEEE Princeton Section Sarnoff Symposium Pub Date : 1993-03-26 DOI:10.1109/SARNOF.1993.657973

T. Huff, M. Upton, P. Sherhatt, P. Barker, R. McVay, T. Stanley, R. Brown, R. Lomax, T. Mudge, K. Sakallah

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引用次数: 1

摘要

一个32位的RISC微处理器已经在0。GaAs DCFL工艺。它包括16O。在13.9 x 7.8mm2的芯片上安装了600个晶体管，功耗为2rlW。该芯片包含一个ALU。32x32寄存器文件，4字写缓冲区，小片上i缓存，以及支持片外指令和数据缓存。

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A High Performance GaAs Microprocessor

A 32-bit RISC microprocessor has been fabricated in a 0.GaAs DCFL process. It includes 16O.ooO transistors on a 13.9 x 7.8mm2 chip, and dissipates 2rlW. The chip contains an ALU. 32x32 Rgister file, 4word write buffer, small on-chip I-cache, and suppon for off-chip instruction and data caches.

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1993 IEEE Princeton Section Sarnoff Symposium

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