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引用次数: 11
摘要
近年来，应用在输出功率和功率附加效率(PAE)方面有了显著改善(1,2)。据报道，hbt在x波段的效率超过50%，功率密度高达4 waWmm (CW)(2)。在脉冲操作下，观察到输出功率增加了-3 dB。由于这些令人印象深刻的结果，hbt目前被认为是mesfet的下一代固态功率放大器的替代品，需要从与目前使用的相同尺寸的模块中获得更高的功率和效率。本文将讨论功率HBT的电气和热设计，并介绍一个非常高效的8-14GH2, 1 W HBT放大器的性能[3]。这个放大器代表了这个频段内最先进的PAE。微波功率用GaAslAIGaAs异质结双极晶体管(HBTs)
Microwave Power Applications of GalIium Arsenide Heterojunction Bipolar Transistors
applications have shown marked improvements in output power and power added efficiency (PAE) during recent years (1,2]. HBTs exhibiting efficiencies in excess of 50% and power densities up to 4 waWmm (CW) at X-band have been reported (2). Under pulsed operation, an increase in output power by -3 dB has been observed. As a consequence of these impressive results, HBTs are currently being considered as replacements for MESFETs in the next generation solid state power amplifiers requiring increased power and efficiency from modules ofthe same size as those in use today. This paper will discuss electrical and thermal design of power HBTs and present the performance of a very high efficiency 8-14GH2, 1 W HBT amplifier [3]. This amplifier represents the state-of-the-art in PAE over this band. GaAslAIGaAs heterojunction bipolar transistors (HBTs) designed for microwave power
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