2005 International Symposium on Electronics Materials and Packaging最新文献_第5页

Strain measurement in the microstructure of advanced electronic packages using digital image correlation 利用数字图像相关技术测量高级电子封装微结构中的应变

2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598240

N. Shishido, T. Ikeda, N. Miyazaki, Y. Honmachi

{"title":"Strain measurement in the microstructure of advanced electronic packages using digital image correlation","authors":"N. Shishido, T. Ikeda, N. Miyazaki, Y. Honmachi","doi":"10.1109/EMAP.2005.1598240","DOIUrl":"https://doi.org/10.1109/EMAP.2005.1598240","url":null,"abstract":"Recently, the sizes of electronic products have been decreasing rapidly, with many electronic devices embedded in print circuit boards (PCBs), a phenomenon known as system in package (SiP). In the near future, not only passive devices but also active devices are embedded in the PCBs. It is thought that stress and strain around embedded devices affects the functions of embedded devices. A measurement system of stress and strain in the microstructures of PCBs is needed. In this study, a system for measuring thermal strain in the micro region of PCBs using the digital image correlation method (DICM) in conjunction with an optical microscope was developed. The accuracy of the measurement of thermal strain was verified by measuring the distribution of strain on the surface of a homogeneous aluminum alloy that is heated uniformly. Then, the strain distribution in a PCB was measured using the developed system. Although the measured distribution of strain in the PCB using the DICM was very complicated, the warpage of the PCB calculated from the measured strain accurately corresponded with the macroscopic warpage measured using a laser displacement meter. The accuracy of measurement was affected by the image distortion caused by the optical system and by the nonlinearity of the image sensor of the complementary metal-oxide semiconductor (CMOS) camera. An error correction method was introduced into the present measurement system to increase the system's accuracy.","PeriodicalId":352550,"journal":{"name":"2005 International Symposium on Electronics Materials and Packaging","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133617136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Reliability analysis of embedded chip technique with design of experiment methods 嵌入式芯片技术可靠性分析与实验方法设计

2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598233

Xiuzhen Lu, Liu Chen, Z. Cheng, Johan Liu

引用次数: 4

Wafer-scale BCB resist-processing technologies for high density integration and electronic packaging 用于高密度集成和电子封装的晶圆级BCB电阻加工技术

2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598259

R. Pelzer, V. Dragoi, D. Swinnen, P. Soussan, T. Matthias

{"title":"Wafer-scale BCB resist-processing technologies for high density integration and electronic packaging","authors":"R. Pelzer, V. Dragoi, D. Swinnen, P. Soussan, T. Matthias","doi":"10.1109/EMAP.2005.1598259","DOIUrl":"https://doi.org/10.1109/EMAP.2005.1598259","url":null,"abstract":"IC performance is drastically limited by line-to-line capacity coupling and RC interconnect delay times resulted from the continuous increase in integration densities with 0.10/spl mu/m line and space width approaches, as well from increased signal frequencies. The new achievements in terms of circuit lines shrinkage emphasize the need for the introduction of Cu and low-k dielectric materials The main properties of the dielectric materials required for a large field of versatile applications/designs can be summarized in: isotropic dielectric constants (2.65-2.5@ 1MHz-10GHz), good thermal stability, low CTE and a good adhesion to different substrates. Commercially available benzocyclobutene (BCB)-based polymer dielectrics, like cyclotone from Dow Chemical Company can fulfil these demands. The new materials not only opened new application areas, but also penetrated well established technologies. The extensive field of BCB-based applications ranges from interlayer dielectric applications - chip stacking by vertical 3D interconnections, to pad redistribution layers and device encapsulation. These technologies realized in vertical interconnection and wafer-level packaging (WLP), are viable solutions for increasing electronic device functional density and reducing total packaging costs. This paper reports on different BCB applications for wafer-to-wafer adhesive bonding for 3D integration, sprays coating for encapsulation and photo-structuring using a proximity mask aligner for pad redistribution and integrated passives.","PeriodicalId":352550,"journal":{"name":"2005 International Symposium on Electronics Materials and Packaging","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133927032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Turbulence modelling for electronic cooling: a review 电子冷却的湍流模型:综述

2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598275

K. Dhinsa, C. Bailey, K. Pericleous

引用次数: 6

The impact of capacitors selection and placement to the ESL and ESR 电容器的选择和放置对ESL和ESR的影响

2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598272

H. Since, S. Sijher Taninder, Beh Jiun Kai

引用次数: 7

Study on long life large-deflective hinges in molded pantograph mechanisms based on cyclic load-bending fatigue test 基于循环载荷-弯曲疲劳试验的模制受电弓机构长寿命大挠度铰链研究

2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598250

M. Horie, Y. Okabe, M. Yamamoto, D. Kamiya

{"title":"Study on long life large-deflective hinges in molded pantograph mechanisms based on cyclic load-bending fatigue test","authors":"M. Horie, Y. Okabe, M. Yamamoto, D. Kamiya","doi":"10.1109/EMAP.2005.1598250","DOIUrl":"https://doi.org/10.1109/EMAP.2005.1598250","url":null,"abstract":"A molded pantograph mechanism consisted of large-deflective hinges and links is used in a new surface mount system proposed by Mikio Hone. To obtain long life, large-deflective hinges, we showed the method to conduct the repetitive tensile-compressive and bending test on a hinge specimen, and manufactured experimental equipment for a fatigue test. We also evaluated the test equipment and confirmed its effectiveness. The materials of the large-deflective hinge were selected as follows: (1) polypropylene(PP), (2) polymerization blend PP (A1 /spl sim/ A4) which we call PP+R-TPO, that is, the thermoplastic elastomer to which PP monomer and ethylene are polymerized by multistep, (3) machine blend PP (B1 /spl sim/ B3) called PP+EPDM that PP and ethylene propylene-diene monomer (EPDM) were mechanically mixed using a mixer, and (4) another machine blend PP (B1 /spl sim/ B3)(+MAH-PP) that we mixed maleic anhydride modified PP (MAH-PP) with the above (3) machine blend PP. The hinge specimen used for the fatigue test was made with the injection molding machine. From the relationship between the number of cycles leading to the fracture of the hinge and the repetitive tensile-compressive loads in the fatigue test, it has been confirmed that the difference in hinge thickness and the difference in the materials greatly influenced the inner damage of the hinges.","PeriodicalId":352550,"journal":{"name":"2005 International Symposium on Electronics Materials and Packaging","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124266971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Development of an automated X-ray inspection method for microsolder bumps 微焊料凸点的自动x射线检测方法的开发

2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-01 DOI: 10.1109/EMAP.2005.1598229

A. Teramoto, T. Murakoshi, M. Tsuzaka, H. Fujita

引用次数: 3

Stress intensity factors of interface corners 界面角应力强度因子

2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-01 DOI: 10.1109/EMAP.2005.1598271

C. Hwu, T. Kuo

{"title":"Stress intensity factors of interface corners","authors":"C. Hwu, T. Kuo","doi":"10.1109/EMAP.2005.1598271","DOIUrl":"https://doi.org/10.1109/EMAP.2005.1598271","url":null,"abstract":"Stress singularity usually occurs near the interface corners, which may initiate failure of structures. Although several detailed studies have been done about the determination of their associated singular orders and stress intensity factors, very few failure criteria for general interface corners were successfully established based upon these parameters. Even the cracks in homogeneous media or the cracks lying along the interface between dissimilar materials are the special cases of the interface corners, the definitions of stress intensity factors proposed in the literature are usually not consistent with that of cracks. Thus, to have a universal failure criterion for the homogeneous cracks, interface cracks and interface corners, a unified definition for the stress intensity factors is indispensable. Moreover, according to the experience of crack problems, finding a stable and accurate approach to calculate the stress intensity factors is also important. Based upon the analytical solutions obtained previously for the multibonded anisotropic wedges and the well-known path-independent H-integral, in this paper we provide a unified definition and a stable computing approach for the stress intensity factors of interface corners.","PeriodicalId":352550,"journal":{"name":"2005 International Symposium on Electronics Materials and Packaging","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131437514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Fatigue crack growth in lead-free solder joints 无铅焊点的疲劳裂纹扩展

2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-01 DOI: 10.1109/EMAP.2005.1598267

M. Omiya, K. Kishimoto, M. Amagai

引用次数: 0

Evaluation of fatigue strength for solder joints after thermal aging 热老化后焊点疲劳强度的评定

2005 International Symposium on Electronics Materials and Packaging Pub Date : 2004-07-20 DOI: 10.1299/JSMEZAIRIKI.2004.0_253

T. Miyazaki, M. Oomiya, H. Inoue, K. Kishimoto, M. Amagai

引用次数: 0