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2005 International Symposium on Electronics Materials and Packaging最新文献

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Investigation of void-free electroplating method on copper column based solder bump for flip-chip interconnections 倒装片互连用铜柱凸点无空洞电镀方法的研究
2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598245
H. Yamada
{"title":"Investigation of void-free electroplating method on copper column based solder bump for flip-chip interconnections","authors":"H. Yamada","doi":"10.1109/EMAP.2005.1598245","DOIUrl":"https://doi.org/10.1109/EMAP.2005.1598245","url":null,"abstract":"A void-free copper electroplating method on copper column based solder bump for flip-chip interconnection enabling reduction of the copper column void defects in the solder bump was investigated. The surface energy of the resist mask surface, which affects the wettability of the electroplating solution, was investigated by applying a surface modification technique with ultraviolet (UV) radiation treatment and oxygen plasma treatment. Also, the surface tension of electroplating solution was evaluated by employing an interfacial activator. Both the UV radiation treatment and the oxygen plasma treatment were found to increase the wettability on the electroplating resist surfaces and decrease the number of bubbles causing void defects in the solder bump. In addition, the interfacial activator decreased the number of bubbles and prevented the copper column void defects completely.","PeriodicalId":352550,"journal":{"name":"2005 International Symposium on Electronics Materials and Packaging","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123571164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Electro-thermal analysis of device interactions in Si CMOS structure Si CMOS结构中器件相互作用的电热分析
2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598279
T. Hatakeyama, K. Fushinobu, K. Okazaki
{"title":"Electro-thermal analysis of device interactions in Si CMOS structure","authors":"T. Hatakeyama, K. Fushinobu, K. Okazaki","doi":"10.1109/EMAP.2005.1598279","DOIUrl":"https://doi.org/10.1109/EMAP.2005.1598279","url":null,"abstract":"Numerical calculation of submicron silicon MOSFET and CMOS device is performed. Conjugate nature of the thermal and electrical behavior in the device is considered, and the lattice temperature is solved as well as the electron concentration and the electron temperature. Considering both the electron temperature and the lattice temperature is important for the device modeling, for example the electron distribution shows the difference with and without considering the electron temperature. In this research, by comparing the calculation result of n-type and p-type MOSFET and that of CMOS, we examine the interaction mechanism between n-type and p-type MOSFET in CMOS device when the distance between n-type and p-type MOSFET is decreased. From the calculated results, we investigate that the reason of the interaction between two MOSFET in CMOS is the forward bias at the p-n junction of substrate. Furthermore, we can estimate the distance, at the case of interaction, from the results of n-type and p-type MOSFET separately model, not from the results of CMOS model.","PeriodicalId":352550,"journal":{"name":"2005 International Symposium on Electronics Materials and Packaging","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116419750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Propagation loss evaluation of optical transmission/interconnect system with grating structure 光栅结构光传输/互连系统的传输损耗评估
2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598247
A. Kimura, K. Yasuda, M. Matsushima, K. Fujimoto
{"title":"Propagation loss evaluation of optical transmission/interconnect system with grating structure","authors":"A. Kimura, K. Yasuda, M. Matsushima, K. Fujimoto","doi":"10.1109/EMAP.2005.1598247","DOIUrl":"https://doi.org/10.1109/EMAP.2005.1598247","url":null,"abstract":"In order to achieve the super-wideband and super-high density, the light multiplex wiring utilizing thin film waveguide with grating elements has attracted attentions. However, the optical transmission system equipped with such grating elements has a lot of parameters for the design and these parameters have complicated subordination relations. In this paper, we evaluate the transmission power loss of the optical transmission system equipped with the grating elements with considering diffraction phenomena by the numerical analysis simulation. The electromagnetic field numerical simulation of the transmission light was conducted by using the FDTD (finite difference time domain) method in 2D models. The purpose is to examine the influence of each parameter given to the performance, the transmission power loss of the device, and the extraction of a critical parameter. Consequently, the dependency of, wavelength, grating period, thickness of the grating layer, and refractive index, concerning the coupling efficiency of grating were clarified.","PeriodicalId":352550,"journal":{"name":"2005 International Symposium on Electronics Materials and Packaging","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128300757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-cost active-alignment of single-mode fiber-arrays 单模光纤阵列的低成本有源对准
2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598261
D. Weiland, M. Luetzelschwab, M. Desmulliez, A. Missoffe, C. Beck
{"title":"Low-cost active-alignment of single-mode fiber-arrays","authors":"D. Weiland, M. Luetzelschwab, M. Desmulliez, A. Missoffe, C. Beck","doi":"10.1109/EMAP.2005.1598261","DOIUrl":"https://doi.org/10.1109/EMAP.2005.1598261","url":null,"abstract":"A low-cost method for the active alignment of 2D bundles of optical single mode fibres is described in this article. Submicron translational alignment accuracy is being implemented by this method. High positioning accuracy can be realised by combining electrostatic movement and monitoring of the insertion losses in a closed loop feedback alignment system.","PeriodicalId":352550,"journal":{"name":"2005 International Symposium on Electronics Materials and Packaging","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126010302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Development of the embedded LSI technology in PALAP/spl trade/ 嵌入式LSI技术在PALAP/spl贸易/中的发展
2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598258
H. Kamiya, T. Miyake, H. Kobayashi, K. Kondo
{"title":"Development of the embedded LSI technology in PALAP/spl trade/","authors":"H. Kamiya, T. Miyake, H. Kobayashi, K. Kondo","doi":"10.1109/EMAP.2005.1598258","DOIUrl":"https://doi.org/10.1109/EMAP.2005.1598258","url":null,"abstract":"We are developing the embedded LSI technology in PALAP/spl trade/; PWB developed by DENSO CORP.; made from plural patterned thermoplastic resin films and fabricated with one time hot press process. To understand the behavior of the resin, via, copper land, LSI and so on during press process, a new strong coupling analysis system was developed. Using this system, we analyzed the velocity of resin around the LSI, when embedding the LSI. As a result, it was cleared that the resin under the LSI flowed toward the clearance, and the velocity sharply increased at peripheral position of the LSI. Practically, via under the LSI radially moved from the LSI central part according to the velocity distribution. It is not concerned with the positional relationship between the LSI bump and via that the clearance is different from each other at the left right of the LSI, because the LSI moves with the resin at the same timing and velocity.","PeriodicalId":352550,"journal":{"name":"2005 International Symposium on Electronics Materials and Packaging","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132152354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modelling and simulation of a fluid-driven microturbine 流体驱动微型涡轮的建模与仿真
2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598270
C. Sriphung, R. Dhariwal
{"title":"Modelling and simulation of a fluid-driven microturbine","authors":"C. Sriphung, R. Dhariwal","doi":"10.1109/EMAP.2005.1598270","DOIUrl":"https://doi.org/10.1109/EMAP.2005.1598270","url":null,"abstract":"In this paper, an analytical study is presented which looks at the interaction between a rotor and shaft structure and surrounding viscous flow in steady state for a proposed microturbine. The finite element analysis (FEA) package, ANSYS, has been used for analysing in 3D, a nonlinear behaviour model of the fluid-structure interaction. The microturbine module consists of cavity, rotor, step and shaft with air applied as the driving fluid. The rotor can be fixed rigidly on to the shaft, where the shaft itself is free to move up or down but the rotor can also be considered to be rotating around a fixed shaft. Displacement and deflection of the rotor can be derived by the simulation model from the consideration of fluid pressure applied to the inlet at typically 2 kPa. Results are presented for levitation, torque and the volume of gas escaping from small gaps at the top and bottom of the unit, with the shaft protruding out of the module. This is the first step towards considering the power output from the turbine, since this would be done by attaching some sort of gearing mechanism to the protruding shaft.","PeriodicalId":352550,"journal":{"name":"2005 International Symposium on Electronics Materials and Packaging","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127392528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Critical appraisal of thermo-mechanical reliability of medium-power heterojunction bipolar transistors for base station and military applications mounted in SOIC-8 leadframe based plastic overmold packages with conductive silver epoxy 用于基站和军事应用的中等功率异质结双极晶体管的热机械可靠性的关键评估，安装在基于SOIC-8引线框架的导电环氧银塑料复模封装中
2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598277
S. Madra
{"title":"Critical appraisal of thermo-mechanical reliability of medium-power heterojunction bipolar transistors for base station and military applications mounted in SOIC-8 leadframe based plastic overmold packages with conductive silver epoxy","authors":"S. Madra","doi":"10.1109/EMAP.2005.1598277","DOIUrl":"https://doi.org/10.1109/EMAP.2005.1598277","url":null,"abstract":"Medium power GaInP/GaAs heterojunction bipolar transistors (HBTs) operating up to 2.5 Watts of dc dissipation have been evaluated vis-a-vis thermo-mechanical reliability when packaged into SOIC-8 leadframe packages with conductive silver-based epoxy. Thermo-mechanical analyses (TMA) was used to characterize the glass transition temperature (T/sub G/) of the molding compound, and detailed finite difference analysis (FDA) based thermal models were generated to characterize the thermal profiles across the package. The thermal model results show that the molding compound layer has a much lower temperature distribution than the high device junction temperatures, and also lower than the measured glass transition temperature, hence minimizing the risk of delamination due to thermo-mechanical residual stresses.","PeriodicalId":352550,"journal":{"name":"2005 International Symposium on Electronics Materials and Packaging","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124151825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The study of silicon dies stress in stacked die packages 堆叠晶片封装中硅晶片应力的研究
2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598238
E. Yamada, K. Abe, Y. Suzuki, M. Amagai
{"title":"The study of silicon dies stress in stacked die packages","authors":"E. Yamada, K. Abe, Y. Suzuki, M. Amagai","doi":"10.1109/EMAP.2005.1598238","DOIUrl":"https://doi.org/10.1109/EMAP.2005.1598238","url":null,"abstract":"The purpose of the present study is to understand the overhang size effect of stacked die package on a chip. The deflection and stress in the chip as during wire bonding is evaluated using finite element model. It is considered that stresses in the part of top die over the spacer edge, and effect of the thickness on the chip is discussed. Also, this study provides stresses of the structure around a bond pad during bonding process. The stress of a top die is investigated for two types of spacer materials, silicon and resin spacer, respectively.","PeriodicalId":352550,"journal":{"name":"2005 International Symposium on Electronics Materials and Packaging","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129142171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modelling the lamination process for ruggedised displays 模拟加固显示器的层压过程
2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598269
Y. Lee, C. Bailey, Hua Lu, S. Riches, M. Bartholomew, N. Tebbit
{"title":"Modelling the lamination process for ruggedised displays","authors":"Y. Lee, C. Bailey, Hua Lu, S. Riches, M. Bartholomew, N. Tebbit","doi":"10.1109/EMAP.2005.1598269","DOIUrl":"https://doi.org/10.1109/EMAP.2005.1598269","url":null,"abstract":"Active matrix liquid crystal displays (AMLCD) need to be protected in severe environments. This is achieved through a ruggedisation process, where the display is laminated with cover glasses to become a more robust structure. The ruggedisation process can in itself cause stresses in the display and this can lead to delamination failures during the lamination process, during qualification testing or in-service. Controlling the magnitude of stress in a display during the lamination process is of course very important and this depends highly on the materials used. This paper discusses the use of finite element analysis to investigate the use of different materials in the lamination process and how such materials can affect the stress magnitude in the display.","PeriodicalId":352550,"journal":{"name":"2005 International Symposium on Electronics Materials and Packaging","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122486255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A new method of birefringence measurement to obtain stress field using photoelasticity 一种利用光弹性获得应力场的双折射测量新方法
2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598248
K. Gomi, K. Shimizu, H. Suzuki, S. Gohira, Y. Niitsu, K. Ichinose
{"title":"A new method of birefringence measurement to obtain stress field using photoelasticity","authors":"K. Gomi, K. Shimizu, H. Suzuki, S. Gohira, Y. Niitsu, K. Ichinose","doi":"10.1109/EMAP.2005.1598248","DOIUrl":"https://doi.org/10.1109/EMAP.2005.1598248","url":null,"abstract":"This paper reports on a new method for measuring of birefringence to obtain stress fields using laser photoelasticity. This method provides for the measurements of magnitude and the angular orientation of the fast axis of the birefringence without the necessity of specimen rotation. In order to check the validity of the method, birefringence of two crystal wave plates with nominal retardation magnitudes of 79.1 and 10.0 nanometers were examined. Good agreement was obtained between measured values and the nominal values. The cause of the difference between experimental results and nominal values is also discussed.","PeriodicalId":352550,"journal":{"name":"2005 International Symposium on Electronics Materials and Packaging","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131599712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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