嵌入式LSI技术在PALAP/spl贸易/中的发展

H. Kamiya, T. Miyake, H. Kobayashi, K. Kondo
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引用次数: 1

摘要

我们正在开发的嵌入式LSI技术在PALAP/spl贸易/;电装公司开发的PWB;由多元图案热塑性树脂薄膜制成,采用一次热压工艺制造。为了了解树脂、通孔、铜基、大规模集成电路等在冲压过程中的行为,开发了一种新的强耦合分析系统。利用该系统对嵌入LSI时树脂在LSI周围的速度进行了分析。结果表明,在LSI下的树脂向间隙方向流动,并且在LSI外围位置流速急剧增加。实际上,在大规模集成电路下的通孔根据速度分布从大规模集成电路的中心部分径向移动。这与LSI凸点和通孔之间的位置关系无关,在LSI的左右间隙彼此不同,因为LSI与树脂以相同的时间和速度移动。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Development of the embedded LSI technology in PALAP/spl trade/
We are developing the embedded LSI technology in PALAP/spl trade/; PWB developed by DENSO CORP.; made from plural patterned thermoplastic resin films and fabricated with one time hot press process. To understand the behavior of the resin, via, copper land, LSI and so on during press process, a new strong coupling analysis system was developed. Using this system, we analyzed the velocity of resin around the LSI, when embedding the LSI. As a result, it was cleared that the resin under the LSI flowed toward the clearance, and the velocity sharply increased at peripheral position of the LSI. Practically, via under the LSI radially moved from the LSI central part according to the velocity distribution. It is not concerned with the positional relationship between the LSI bump and via that the clearance is different from each other at the left right of the LSI, because the LSI moves with the resin at the same timing and velocity.
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