2005 International Symposium on Electronics Materials and Packaging最新文献_第3页

Microscale magnetic components for the application of DC-DC converters operating in the 1-10 MHz range 用于在1-10 MHz范围内工作的DC-DC转换器应用的微尺度磁性元件

2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598260

D. Flynn, A. Toon, M. Desmulliez

引用次数: 3

Mechanical properties of ITO/PET thin film deposited by DC MG method 直流MG法沉积ITO/PET薄膜的力学性能

2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598256

Do-Hyoung Kim, H. Yoon, Do-Hoon Shin, R. Murakami

引用次数: 2

The novel flip chip ball grid array design and challenges to enable higher routing density and power requirement 新颖的倒装芯片球栅阵列设计和挑战，使更高的布线密度和功率要求

2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598266

C. W. Wong, Chee Kheong Yoon, Seng-Hooi Ong

引用次数: 1

A role of Ti-Sn diffusion layer formed at the interface between Pb free solder and TiNiAu multilayer 在无Pb钎料与tinau多层钎料界面处形成Ti-Sn扩散层

2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598234

K. Kayukawa, A. Tanahashi

{"title":"A role of Ti-Sn diffusion layer formed at the interface between Pb free solder and TiNiAu multilayer","authors":"K. Kayukawa, A. Tanahashi","doi":"10.1109/EMAP.2005.1598234","DOIUrl":"https://doi.org/10.1109/EMAP.2005.1598234","url":null,"abstract":"The intermetallic compounds such as a nickel-tin (Ni-Sn) layer are formed at the interface between a solder and a backside electrode composed of a titanium/nickel/gold (Ti/Ni/Au) multilayer for power devices. In this study, a Pb-free solder was compared with a Pb-based solder and investigated the adhesion properties and the interfacial microstructures between the solders and the Ti/Ni/Au multilayers for the power device reliability. In the case of the Pb-based solder, the Ni-Sn layer existed at the Ti layer interface after a reflow soldering process. However, the Ni-Sn layer was separated from the Ti layer after a thermal shock test, and the device was peeled off between the solder and the Ti layer by a pull method. There was no diffusion layer at the interface between the Ti layer and the solder. In the case of the Pb-free solder, the Ni-Sn layer separated from the Ti layer after a Pb-free reflow soldering process. Contrary to our expectation, the device was not peeled off at any interfaces but cracked in the silicon (Si) die even after the thermal shock test. By transmission electron microscope (TEM) observation, the existence of a Ti-Sn layer was confirmed at the interface between the Ti layer and the Pb-free solder. As a result, the Ti-Sn layer was closely related to adhesion properties.","PeriodicalId":352550,"journal":{"name":"2005 International Symposium on Electronics Materials and Packaging","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114600797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

SAW chemical sensors based on AlGaN/GaN piezoelectric material system: acoustic design and packaging considerations 基于AlGaN/GaN压电材料系统的SAW化学传感器:声学设计和封装考虑

2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598262

L. Rufer, A. Torres, Salvador Mir, M. O. Alam, Tibor Lalinský, Y. C. Chan

{"title":"SAW chemical sensors based on AlGaN/GaN piezoelectric material system: acoustic design and packaging considerations","authors":"L. Rufer, A. Torres, Salvador Mir, M. O. Alam, Tibor Lalinský, Y. C. Chan","doi":"10.1109/EMAP.2005.1598262","DOIUrl":"https://doi.org/10.1109/EMAP.2005.1598262","url":null,"abstract":"In this paper, we present the modeling of the mechanical part of a MEMS (microelectromechanical systems)-based sensor for identifying environmental contaminants and chemical or biological agents in large applications scale. The mechanical part involves the structure for the generation and reception of the surface acoustic wave likewise the packaging and housing structure of the sensor. Sensor detection mechanism is based on the changes of the surface acoustic wave (SAW) propagation along the substrate. By using various coatings on the surface of the SAW device, various cells, chemicals, gases and bio materials can be detected due to changes of the velocity or phase of a propagating acoustic wave induced by the outer environment. The AlGaN/GaN material system preferentially grown on both silicon and sapphire (Al/sub 2/O/sub 3/) substrates by metal organic vapor phase epitaxy (MOCVD) or by molecular beam expitaxy (MBE) is a promising platform for fabrication of a new generation of wireless SAW sensor devices. This implicate the development of high electron mobility transistor (HEMT) structure integrated in a single chip with the SAW sensor and thus creating a unique acoustic velocity tuning device with low acoustic loss and high frequency.","PeriodicalId":352550,"journal":{"name":"2005 International Symposium on Electronics Materials and Packaging","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124084073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Case studies of reliability analysis by stochastic methodology in BGA creep analysis 随机方法在BGA蠕变分析中的可靠性分析实例研究

2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598231

S. Sasaki, M. Tateishi, I. Ishikawa, P. Vanderwalt

引用次数: 2

Effect of frequency on fatigue crack growth along interface between copper film and silicon substrate 频率对铜膜与硅衬底界面疲劳裂纹扩展的影响

2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598236

D. van Truong, H. Hirakata, T. Kitamura

引用次数: 1

Effect of lead and cadmium free glasses on reliability of the silver end termination for MLCC application 无铅、无镉玻璃对MLCC银端接线可靠性的影响

2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598237

M. Akhtar

{"title":"Effect of lead and cadmium free glasses on reliability of the silver end termination for MLCC application","authors":"M. Akhtar","doi":"10.1109/EMAP.2005.1598237","DOIUrl":"https://doi.org/10.1109/EMAP.2005.1598237","url":null,"abstract":"New regulations to control and manage waste disposal European Union come out with regulation like WEES (Waste from Electrical and Electronics Equipment) and RoHS (regulation of hazardous substance) use in European Union. RoHS eliminate use of hazardous elements like lead, cadmium, chromium and others form electronic equipments used and manufactured in European countries. Metech Electronic a division of Lord Corporation has developed silver end termination, which meets the requirements imposed by RoHS. New silver end termination paste is based on glass, which is free of elements regulated as hazardous in nature. Effect of glass on different barium titanate body type is presented. Effect of glass on the properties like IR value of the terminated parts before and after steam test is discussed. Data are presented on different tests like highly accelerated life test (HALT), termination dimension, load humidity test etc. conducted during its development and is compared with the existing Metech leaded products as well as similar products available in market for same application is presented. Fired scanning electron microstructure for fired termination is also presented along with optical image showing continuity of nickel and tin plating.","PeriodicalId":352550,"journal":{"name":"2005 International Symposium on Electronics Materials and Packaging","volume":"139 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122894500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Effects of low-modulus die attach adhesive on warpage and damage of BGA 低模量模附胶对BGA翘曲和损伤的影响

2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598254

S. Yi, P. Daharwal, Y. Lee, B. Harkness

{"title":"Effects of low-modulus die attach adhesive on warpage and damage of BGA","authors":"S. Yi, P. Daharwal, Y. Lee, B. Harkness","doi":"10.1109/EMAP.2005.1598254","DOIUrl":"https://doi.org/10.1109/EMAP.2005.1598254","url":null,"abstract":"Numerical experiments based on the 3D nonlinear finite element method (FEM) have been conducted to understand governing damage mechanisms during the die attachment for the ball grid array (BGA) packages. The parametric studies for various designs of the BGA package and material properties have been performed. A wide range of the modulus (1MPa /spl sim/ 30GPa) and the coefficient of thermal expansion (CTE) (10ppm /spl sim/ 300ppm) were evaluated to see feasibility of a new class of material set in the die attach adhesive. Effects of thermo-mechanical properties, particularly glass transition temperature (Tg) of selected die attach adhesives on the damage and warpage of the die and substrate of BGA are analyzed. The warpage of substrate and Si die cracking due to the material properties of the die attach adhesive are demonstrated. Classification of modes of deformation in the BGA package with material sets sheds light on novel material development for better reliability. In addition, the optimum thermo-mechanical properties of die attachment materials and molding compounds will be selected based on the parametric studies.","PeriodicalId":352550,"journal":{"name":"2005 International Symposium on Electronics Materials and Packaging","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125262374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Characterization of Au-Sn eutectic die attach process for optoelectronics device 光电器件中Au-Sn共晶贴片工艺的表征

2005 International Symposium on Electronics Materials and Packaging Pub Date : 2005-12-11 DOI: 10.1109/EMAP.2005.1598246

Thang Tak-Seng, Decai Sun, H. Koay, Mohd-Fezley Sabudin, J. Thompson, P. Martín, P. Rajkomar, S. Haque

{"title":"Characterization of Au-Sn eutectic die attach process for optoelectronics device","authors":"Thang Tak-Seng, Decai Sun, H. Koay, Mohd-Fezley Sabudin, J. Thompson, P. Martín, P. Rajkomar, S. Haque","doi":"10.1109/EMAP.2005.1598246","DOIUrl":"https://doi.org/10.1109/EMAP.2005.1598246","url":null,"abstract":"Eutectic Au-20wt%Sn die attach process has been widely used for laser diode and LED applications due to the superior strength and thermal property of the constructed solder joint. For eutectic die attach of AuSn pre-deposited die to substrate, temperature of substrate is heated above liquidus temperature of eutectic Au-Sn and followed by lower temperature post-bond for solidification. Depending on the setup and configuration of the eutectic bonder, the time for the die to remain on bonding stage varies before being transferred to cooler post bond zone. In this study, the interaction of Au and Sn layers at different temperature above liquidus of 280/spl deg/C are analyzed. The formation of Au-Sn eutectic 80:20 and other intermetallic and phase compositions with response to different temperature and time are characterized. 20 minutes of prolonged exposure time is set as the utmost condition to characterize the property of the bonding interface and intermetallic compositions. The result from the analysis demonstrates that Au has migrated to eutectic Au-20wt%Sn to form Au rich solder interface with about Au-4.384.58wt%Sn at 300/spl deg/C and Au-3.45-4.12wt%Sn at 320/spl deg/C respectively after 20 minutes of exposure time. Placement accuracy of the dies is found to be unaffected after the heat exposure.","PeriodicalId":352550,"journal":{"name":"2005 International Symposium on Electronics Materials and Packaging","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121899095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 13