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2021 Third International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM)最新文献

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Power Microtransformer on Silicon Embedded into PCB 功率微变压器的硅嵌入到PCB
2021 Third International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM) Pub Date : 2021-06-21 DOI: 10.1109/3D-PEIM49630.2021.9497259
D. Dinulovic, Leon Haase, M. Haug, J. Wolf
{"title":"Power Microtransformer on Silicon Embedded into PCB","authors":"D. Dinulovic, Leon Haase, M. Haug, J. Wolf","doi":"10.1109/3D-PEIM49630.2021.9497259","DOIUrl":"https://doi.org/10.1109/3D-PEIM49630.2021.9497259","url":null,"abstract":"In this work, a feasibility concept for packaging microtransformer devices with integrated magnetic core fabricated on silicon wafers is presented. For packaging, the embedding technology into PCBs is applied. The microtransformer chips with size of 2.5 mm x 2.0 mm are embedded into PCB package with a size of 3.3 mm x 3.0 mm. The profile height of 0.45 mm is achieved for microtransformer devices which were removed from silicon substrate. Electrical test of packaged devices show the reduction of parasitic effects and improvement of electrical performances.","PeriodicalId":352038,"journal":{"name":"2021 Third International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126008099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Opportunities and challenges of integrated WBG power electronics development 世界银行集团电力电子一体化发展的机遇与挑战
2021 Third International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM) Pub Date : 2021-06-21 DOI: 10.1109/3D-PEIM49630.2021.9497265
A. Castellazzi
{"title":"Opportunities and challenges of integrated WBG power electronics development","authors":"A. Castellazzi","doi":"10.1109/3D-PEIM49630.2021.9497265","DOIUrl":"https://doi.org/10.1109/3D-PEIM49630.2021.9497265","url":null,"abstract":"Wide-band-gap semiconductors offer ample scope for progress beyond state-of-the-art in the key parameters of power electronics technology evolution: efficiency, power density and reliability. In particular, their capability for higher switching speeds, higher switching frequencies and operating temperatures has been demonstrated to yield important benefits at system level, even when transistors are used as a drop-in replacement of Si ones. Still, full exploitation of the superior features of wide-band-gap devices and their subsequent large volume deployment is conditional to the bespoke development of auxiliary technology and solutions, including cooling and packaging, as well as design tools and validation methodologies. This papers reviews some of the progress made over the past few years and discusses future needs to ensure successful large-scale application.","PeriodicalId":352038,"journal":{"name":"2021 Third International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131157342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Thermal Solution for Cooling of Electronic Equipment using Lotus-type Porous Copper Heat Sink. 利用lotus型多孔铜散热器冷却电子设备的热解决方案。
2021 Third International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM) Pub Date : 2021-06-21 DOI: 10.1109/3D-PEIM49630.2021.9497264
T. Ogushi, T. Ide
{"title":"Thermal Solution for Cooling of Electronic Equipment using Lotus-type Porous Copper Heat Sink.","authors":"T. Ogushi, T. Ide","doi":"10.1109/3D-PEIM49630.2021.9497264","DOIUrl":"https://doi.org/10.1109/3D-PEIM49630.2021.9497264","url":null,"abstract":"One issue for mounting next-generation power devices is to solve the hot spot problem. Therefore, a heat sink having a small volume and high heat transfer performance is required for mounting the power element, and research on using a porous metal as a heat sink has been widely conducted in recent years. Among the porous metals, lotus metal having unidirectional straight fine pores can increase the amount of heat transfer rate per unit volume with a small pressure loss by reducing the pore diameter and the fluid flow path length. By using lotus metal as a water-cooled heat sink, we obtained excellent cooling performance, that is 2 to 3 times higher cooling performance than that of a conventional grooved heat sink. For air-cooled heat sinks, we developed plane lotus heat sinks using lotus metals that conduct heat from the central base plate mounted by electronic element to surrounding fins in the same plane surface and dissipate heat through the fins. And we also developed lotus heat sinks combined with heat-pipes. It was shown that the thermal resistance per unit volume can be reduced by these lotus heat sinks compared to the grooved heat sink with fine gaps. As a comparing method of cooling performance of the various type of heat sinks, we introduced the method that compares the thermal conductance per volume and the thermal conductance per theoretical power of the heat sink. By this method, the relationship between the cooling performance per volume and the power required for cooling can be clarified. Thermal design can be advanced by using the above comparison method for evaluation of the heat sink under design for the development goal.","PeriodicalId":352038,"journal":{"name":"2021 Third International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM)","volume":"268 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116542729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of High Performance SiC Power Module 高性能SiC电源模块的开发
2021 Third International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM) Pub Date : 2021-06-21 DOI: 10.1109/3D-PEIM49630.2021.9497261
H. Yamaguchi
{"title":"Development of High Performance SiC Power Module","authors":"H. Yamaguchi","doi":"10.1109/3D-PEIM49630.2021.9497261","DOIUrl":"https://doi.org/10.1109/3D-PEIM49630.2021.9497261","url":null,"abstract":"With the developments of 1 kV class SiC power devices which show the extremely high performance such as high switching speed and/or high temperature operation, the improvements of the packaging technologies are strongly required. This is due to the fact that the present packaging technologies which are based on the technologies used for Si power modules are insufficient for realizing high performance SiC power modules since the performance difference between Si power device and SiC power device is too large. In this manuscript, the packaging technology improvements for realizing the high performance 1 kV class SiC power modules are explained.","PeriodicalId":352038,"journal":{"name":"2021 Third International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM)","volume":"234 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115949404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reliability aspects of 3D integrated power devices 三维集成电源器件的可靠性方面
2021 Third International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM) Pub Date : 2021-06-21 DOI: 10.1109/3D-PEIM49630.2021.9497262
C. Bäumler, J. Franke, J. Lutz
{"title":"Reliability aspects of 3D integrated power devices","authors":"C. Bäumler, J. Franke, J. Lutz","doi":"10.1109/3D-PEIM49630.2021.9497262","DOIUrl":"https://doi.org/10.1109/3D-PEIM49630.2021.9497262","url":null,"abstract":"The need for higher switching frequencies, higher operation temperatures and lower volume of power devices increases remarkably due to the increased demand of products with higher power densities, lower weight and smoother power output [1], [2]. Especially, wide band gap materials are needed to fulfill all requirements, but cannot reach their full potential with state of the art planar package technology [1]. To obtain reduced parasitics within the power loop, to reduce the devices footprint, improve heat removal and ensure package reliability, a three dimensional integration of power devices can be utilized [3], [4], [5], [6], [7]. The potential of 3D integration is enormous and essential in order to push power electronic devices to their theoretical limit. Recent developments could not only obtain improved switching proficiencies [8], in addition, remarkable exceedance of active power cycling lifetime and an increased capability to withstand critical overload conditions could be realized [2]. Finally, the establishment of advanced package technologies relies on several reliability and robustness tests. New power module designs are evaluated.","PeriodicalId":352038,"journal":{"name":"2021 Third International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM)","volume":"333 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134517964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of BTI-induced Threshold Voltage Shift for Power MOSFETs during Switching Operation 开关工作中bti诱导功率mosfet阈值电压漂移的研究
2021 Third International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM) Pub Date : 2021-06-21 DOI: 10.1109/3D-PEIM49630.2021.9497260
Michihiro Shintani, Takashi Sato
{"title":"Investigation of BTI-induced Threshold Voltage Shift for Power MOSFETs during Switching Operation","authors":"Michihiro Shintani, Takashi Sato","doi":"10.1109/3D-PEIM49630.2021.9497260","DOIUrl":"https://doi.org/10.1109/3D-PEIM49630.2021.9497260","url":null,"abstract":"The threshold voltage (Vth) shift caused by bias temperature instability (BTI) in power MOSFETs is crucial for ensuring the reliability of power conversion circuits. In this paper, a novel BTI-induced threshold voltage characterization method is presented. As opposed to existing methods in which static voltage input is applied, this method takes into account actual switching operations. Through the experiments using commercially available SiC MOSFETs, the Vth shift is evaluated and the physical mechanism of BTI is discussed on the basis of the measured Vth data.","PeriodicalId":352038,"journal":{"name":"2021 Third International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123825787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TAPIR (compacT and modulAr Power modules with IntegRated cooling) Technology: Goals and Challenges TAPIR(集成冷却的紧凑型模块化电源模块)技术:目标与挑战
2021 Third International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM) Pub Date : 2021-06-21 DOI: 10.1109/3D-PEIM49630.2021.9497263
W. Bikinga, B. Mezrag, Y. Avenas, J. Schanen, J. Guichon, K. Alkama, L. Dupont, V. Bley, E. Vagnon
{"title":"TAPIR (compacT and modulAr Power modules with IntegRated cooling) Technology: Goals and Challenges","authors":"W. Bikinga, B. Mezrag, Y. Avenas, J. Schanen, J. Guichon, K. Alkama, L. Dupont, V. Bley, E. Vagnon","doi":"10.1109/3D-PEIM49630.2021.9497263","DOIUrl":"https://doi.org/10.1109/3D-PEIM49630.2021.9497263","url":null,"abstract":"This paper deals with a new compact and modular technology for power module, with integrated cooling to reduce the global weight/volume of power converters by optimizing the volume of the heat sink. It is based on the modular assembly of elementary switching cells. First the technology is introduced by only focusing on thermal aspects. Then the multiphysics design of elementary switching cells is described. Finally, various aspects concerning the fabrication and design of global power modules are discussed.","PeriodicalId":352038,"journal":{"name":"2021 Third International Symposium on 3D Power Electronics Integration and Manufacturing (3D-PEIM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124534856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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