Opportunities and challenges of integrated WBG power electronics development

Abstract

Wide-band-gap semiconductors offer ample scope for progress beyond state-of-the-art in the key parameters of power electronics technology evolution: efficiency, power density and reliability. In particular, their capability for higher switching speeds, higher switching frequencies and operating temperatures has been demonstrated to yield important benefits at system level, even when transistors are used as a drop-in replacement of Si ones. Still, full exploitation of the superior features of wide-band-gap devices and their subsequent large volume deployment is conditional to the bespoke development of auxiliary technology and solutions, including cooling and packaging, as well as design tools and validation methodologies. This papers reviews some of the progress made over the past few years and discusses future needs to ensure successful large-scale application.