Development of High Performance SiC Power Module

Abstract

With the developments of 1 kV class SiC power devices which show the extremely high performance such as high switching speed and/or high temperature operation, the improvements of the packaging technologies are strongly required. This is due to the fact that the present packaging technologies which are based on the technologies used for Si power modules are insufficient for realizing high performance SiC power modules since the performance difference between Si power device and SiC power device is too large. In this manuscript, the packaging technology improvements for realizing the high performance 1 kV class SiC power modules are explained.