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2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems最新文献

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Monolithic Integrated Coplanar W-Band Impatt Oscillator 单片集成共面w波段输入振荡器
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI: 10.1109/SMIC.2008.62
E. Kasper, H. Xu, E. Dorner, J. Werner
{"title":"Monolithic Integrated Coplanar W-Band Impatt Oscillator","authors":"E. Kasper, H. Xu, E. Dorner, J. Werner","doi":"10.1109/SMIC.2008.62","DOIUrl":"https://doi.org/10.1109/SMIC.2008.62","url":null,"abstract":"Monolithic integrated IMPATT diodes are combined with coplanar waveguide resonator on unthinned silicon wafers to form simple oscillators for mm-wave operation (around 90 GHz). This paper describes properties of planar IMPATTs, their integration into SIMMWICs and proves their basics functionality as mW power sources for simple cost effective and flexible mm-wave systems.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127194062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Low Noise Amplifier with Integrated Balun for 24GHz Car Radar 集成Balun的24GHz车载雷达低噪声放大器
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI: 10.1109/SMIC.2008.26
E. van der Heijden, H. Veenstra, D. Hartskeerl, M. Notten, D. van Goor
{"title":"Low Noise Amplifier with Integrated Balun for 24GHz Car Radar","authors":"E. van der Heijden, H. Veenstra, D. Hartskeerl, M. Notten, D. van Goor","doi":"10.1109/SMIC.2008.26","DOIUrl":"https://doi.org/10.1109/SMIC.2008.26","url":null,"abstract":"This paper discusses the design, simulation and measurement results of a single-ended to differential Low Noise Amplifier (LNA) for 24 GHz short range car radar applications in a production 0.25 mum SiGe:C-BiCMOS technology [1]. The input and two single-ended outputs are designed for 50 Omega impedance. The LNA achieves a measured 13.2 dB gain and 4.2dB noise figure at 24 GHz. Simulations and measurements are in close agreement. The achieved gain and noise figure are as good as for an earlier reported fully single-ended LNA [2]. No balun is required. The 0.55 x 0.60 mm IC dissipates 40 mW from a 3.3 V supply.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116827013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Body-Biasing Control on Zero-Temperature-Coefficient in Partially Depleted SOI MOSFET 部分耗尽SOI MOSFET零温度系数的体偏置控制
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI: 10.1109/SMIC.2008.35
M. El Kaamouchi, G. Dambrine, M. Si Moussa, M. Emam, D. Vanhoenacker-Janvier, J. Raskin
{"title":"Body-Biasing Control on Zero-Temperature-Coefficient in Partially Depleted SOI MOSFET","authors":"M. El Kaamouchi, G. Dambrine, M. Si Moussa, M. Emam, D. Vanhoenacker-Janvier, J. Raskin","doi":"10.1109/SMIC.2008.35","DOIUrl":"https://doi.org/10.1109/SMIC.2008.35","url":null,"abstract":"This work investigates the possibility to tune the zero-temperature-coefficient (ZTC) points in partially depleted (PD) SOI nMOSFET technology by controlling the body-source forward bias (VBS). Measured transconductance and drain current in the saturation region at temperatures between 25 and 200degC were observed for various body-source forward bias conditions. It is found that the variation of threshold voltage (VTH) with body bias has an influence on ZTC points. The measurement results show wide voltage-range of gate-voltage giving either the transconductance ZTC point (VGS,ZTC9m) or the drain-current ZTC point (VGS,ZTC1DS) opening important opportunities in RF circuits design for nigh temperature applications.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115812318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
65nm SOI CMOS SoC Technology for Low-Power mmWave and RF Platform 低功耗毫米波和射频平台的65nm SOI CMOS SoC技术
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI: 10.1109/SMIC.2008.18
Daeik D. Kim, Jonghae Kim, Choongyeun Cho, J. Plouchart, R. Trzcinski
{"title":"65nm SOI CMOS SoC Technology for Low-Power mmWave and RF Platform","authors":"Daeik D. Kim, Jonghae Kim, Choongyeun Cho, J. Plouchart, R. Trzcinski","doi":"10.1109/SMIC.2008.18","DOIUrl":"https://doi.org/10.1109/SMIC.2008.18","url":null,"abstract":"An RF and mm-wave platform developed in 65 nm SOI CMOS technology is presented. The SOI FET performance in a wired cell is measured up to fT=300 GHz and 200 GHz for NFET and PFET. Ring oscillator records 3.6 psec minimum inverter stage delay. Back-end-of-line vertical native capacitor (VNCAP) and on-chip inductor performances are reported. The performance scaling trends of mmWave PLL front-end components are presented.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116471488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Impact of Ballast Resistor Implementations on Linearity and RF Performance of Common-Base SiGe Power HBTs 镇流器电阻实现对共基SiGe功率hbt线性度和射频性能的影响
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI: 10.1109/SMIC.2008.24
Hui Li, Guoxuan Qin, Z. Ma, P. Ma, M. Racanelli
{"title":"Impact of Ballast Resistor Implementations on Linearity and RF Performance of Common-Base SiGe Power HBTs","authors":"Hui Li, Guoxuan Qin, Z. Ma, P. Ma, M. Racanelli","doi":"10.1109/SMIC.2008.24","DOIUrl":"https://doi.org/10.1109/SMIC.2008.24","url":null,"abstract":"The influence of ballasting resistor implementations on the RF performance (both small-signal and large-signal) and on the linearity of common-base (CB) SiGe power HBTs is experimentally investigated. It is demonstrated that higher RF performance and better linearity can be achieved from CB SiGe HBTs by using emitter ballasting scheme than using base ballasting scheme.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128929625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Notice of Violation of IEEE Publication PrinciplesAntenna Diversity Zero-Second-IF SiGe BiCMOS Satellite Radio Tuner for Deep Fading Automotive Mobile Reception 天线分集零秒中频SiGe BiCMOS卫星无线电调谐器用于深度衰落汽车移动接收
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI: 10.1109/SMIC.2008.7
A. Maxim, C. Turinici, M. Gheorge
{"title":"Notice of Violation of IEEE Publication PrinciplesAntenna Diversity Zero-Second-IF SiGe BiCMOS Satellite Radio Tuner for Deep Fading Automotive Mobile Reception","authors":"A. Maxim, C. Turinici, M. Gheorge","doi":"10.1109/SMIC.2008.7","DOIUrl":"https://doi.org/10.1109/SMIC.2008.7","url":null,"abstract":"A dual channel satellite radio receiver that solves the deep fading effect specific to the automotive mobile environment by using antenna diversity was realized in a 0.18μm SiGe BiCMOS technology. The tuner power dissipation was reduced by using a second-zero-IF dual conversion architecture that requires a lower ADC sampling frequency and resolution. A single PLL drives the RF and IF mixers of both signal paths, resulting in a smaller die area and lower power dissipation. Providing a digital baseband I/Q output allows the implementation of the channel decode IC in a standard digital CMOS process, reducing the overall receiver cost. SDARS tuner performance includes: 5dB noise figure, 55dB image rejection, -100dBm input sensitivity, +15dBm IIP3 at min gain, 40/60dB RF/IF AGC range, 200mA current consumption from a 3.3V supply in dual channel operation and 26mm2 die area.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123082414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thick-Gate-Oxide MOS Structures with Sub-Design-Rule (SDR) Polysilicon Lengths for RF Circuit Applications 具有子设计规则(SDR)多晶硅长度的厚栅氧化物MOS结构应用于射频电路
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI: 10.1109/SMIC.2008.53
H. Xu, K. O
{"title":"Thick-Gate-Oxide MOS Structures with Sub-Design-Rule (SDR) Polysilicon Lengths for RF Circuit Applications","authors":"H. Xu, K. O","doi":"10.1109/SMIC.2008.53","DOIUrl":"https://doi.org/10.1109/SMIC.2008.53","url":null,"abstract":"Use of sub-design-rule (SDR) thick-gate-oxide MOS structures can significantly improve RF performance. Utilizing 3-stack 3.3-V MOSFET's with an SDR channel length, a 31.3-dBm 900-MHz Bulk CMOS T/R switch with transmit (TX) and receive (RX) insertion losses of 0.5 and 1.0 dB is realized. A 28-dBm 2.4-GHz T/R switch with TX and RX insertion losses of 0.8 and 1.2 dB is also demonstrated. SDR MOS varactors achieve Qmin of ~ 80 at 24 GHz with a tuning range of ~ 40%.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114388061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
X-Band Receiver Front-End Chip in Silicon Germanium Technology 硅锗技术x波段接收机前端芯片
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI: 10.1109/SMIC.2008.11
T. Quach, C. Bryant, G. Creech, K. Groves, T. James, A. Mattamana, P. Orlando, V. Patel, R. Drangmeister, L. Johnson, B. Kormanyos, R. Bonebright
{"title":"X-Band Receiver Front-End Chip in Silicon Germanium Technology","authors":"T. Quach, C. Bryant, G. Creech, K. Groves, T. James, A. Mattamana, P. Orlando, V. Patel, R. Drangmeister, L. Johnson, B. Kormanyos, R. Bonebright","doi":"10.1109/SMIC.2008.11","DOIUrl":"https://doi.org/10.1109/SMIC.2008.11","url":null,"abstract":"This paper reports a demonstration of X-band receiver RF front-end components and the integrated chipset implemented in 0.18 mum silicon germanium (SiGe) technology. The system architecture consists of a single down conversion from X-band at the input to S-band at the intermediate frequency (IF) output. The microwave monolithic integrated circuit (MMIC) includes an X-band low noise amplifier, lead-lag splitter, balanced amplifiers, double balanced mixer, absorptive filter, and an IF amplifier. The integrated chip achieved greater than 30 dB of gain and less than 6 dB of noise figure.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127124335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A 27.3dBm DECT Power Amplifier for 2.5V Supply in 0.13μm CMOS 用于2.5V电源的27.3dBm DECT功率放大器，0.13μm CMOS
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI: 10.1109/SMIC.2008.14
N. Zimmermann, T. Johansson, S. Heinen
{"title":"A 27.3dBm DECT Power Amplifier for 2.5V Supply in 0.13μm CMOS","authors":"N. Zimmermann, T. Johansson, S. Heinen","doi":"10.1109/SMIC.2008.14","DOIUrl":"https://doi.org/10.1109/SMIC.2008.14","url":null,"abstract":"This work presents a CMOS RF power amplifier (PA) for 1.9 GHz, which has been realized in a standard 0.13 mum CMOS technology. The PA has a two-stage balanced push-pull structure. The stages are coupled by an LC matching network. It is a prestudy for an integrated PA in a single-chip DECT phone. Due to low breakdown voltages of the CMOS transistors in modern technologies, reliability aspects were paid special attention to for the PA design and layout. The PA can be operated with supply voltages of more than 3.6 V. An off-chip microstrip balun is used for transformation of the load impedance and differential-to-single-ended conversion. The fabricated amplifier has an output power of 540 mW (27.3 dBm) at 2.5 V supply and a power added efficiency (PAE) of 37% and meets the requirements for DECT.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129035717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Characterization and Modeling of Microstrip Transmission Lines with Slow-Wave Effect 具有慢波效应的微带传输线的特性与建模
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI: 10.1109/SMIC.2008.45
T. Masuda, N. Shiramizu, T. Nakamura, K. Washio
{"title":"Characterization and Modeling of Microstrip Transmission Lines with Slow-Wave Effect","authors":"T. Masuda, N. Shiramizu, T. Nakamura, K. Washio","doi":"10.1109/SMIC.2008.45","DOIUrl":"https://doi.org/10.1109/SMIC.2008.45","url":null,"abstract":"We propose a modeling methodology to determine the optimum dimensions of slots in ground shield metal of slow-wave transmission lines. We induce a mutual inductance between a signal conductor and return ground current paths to express an equivalent inductance of the transmission line. The model's accuracy is confirmed by characterization of a fabricated transmission line TEG.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115273887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
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