Body-Biasing Control on Zero-Temperature-Coefficient in Partially Depleted SOI MOSFET

Abstract

This work investigates the possibility to tune the zero-temperature-coefficient (ZTC) points in partially depleted (PD) SOI nMOSFET technology by controlling the body-source forward bias (VBS). Measured transconductance and drain current in the saturation region at temperatures between 25 and 200degC were observed for various body-source forward bias conditions. It is found that the variation of threshold voltage (VTH) with body bias has an influence on ZTC points. The measurement results show wide voltage-range of gate-voltage giving either the transconductance ZTC point (VGS,ZTC9m) or the drain-current ZTC point (VGS,ZTC1DS) opening important opportunities in RF circuits design for nigh temperature applications.