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2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems最新文献

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Characterization and Modeling of LDMOS Power FETs for RF Power Amplifier Applications 用于射频功率放大器的LDMOS功率场效应管的特性和建模
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI: 10.1109/SMIC.2008.40
J. Wood, P. Aaen, J. Plá
{"title":"Characterization and Modeling of LDMOS Power FETs for RF Power Amplifier Applications","authors":"J. Wood, P. Aaen, J. Plá","doi":"10.1109/SMIC.2008.40","DOIUrl":"https://doi.org/10.1109/SMIC.2008.40","url":null,"abstract":"In this review we present a measurement-based approach to the creation of a successful circuit model of a high-power RF FET. We describe some of the measurement challenges that we face in the characterization and validation of the FET model, and our approach to their solution. We also outline some of the simulation and modeling techniques that are used in the construction of the complete transistor model. The model itself is fully nonlinear, with a self-consistent dynamic electrothermal component, and includes the in-package matching and package components, which are derived from electro-magnetic simulations.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116374185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
An Ultra-Wide Stopband Lowpass Filter Using a Cross-Diapason-Shaped Defected Ground Structure 一种使用交叉透波形缺陷接地结构的超宽阻带低通滤波器
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI: 10.1109/SMIC.2008.42
R. Weng, S. Cheng, Pai‐Yi Hsiao, Yin-Hsin Chang
{"title":"An Ultra-Wide Stopband Lowpass Filter Using a Cross-Diapason-Shaped Defected Ground Structure","authors":"R. Weng, S. Cheng, Pai‐Yi Hsiao, Yin-Hsin Chang","doi":"10.1109/SMIC.2008.42","DOIUrl":"https://doi.org/10.1109/SMIC.2008.42","url":null,"abstract":"An ultra-wide stopband lowpass filter (LPF) based on the defected ground structure (DGS) is presented in this paper. The proposed LPF is comprised of a cross-diapason-shaped (CDS) pattern along with two dumbbell-shaped pattern DGS. The substrate material is FR4 with dielectric constant of 4.6 and thickness of 0.8 mm. The proposed LPF provides a sharp rejection at 2.4 GHz with an ultra-wide stopband of 30 dB attenuation up to 10 GHz. The etched size can be minimized to be 53.8% less than that of the cascaded configuration. The simulation and measurement results of the CDS-DGS-LPF are provided.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122345261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Broadband Millimeter-Wave Low-Noise Amplifier in SiGe BiCMOS Technology 基于SiGe BiCMOS技术的宽带毫米波低噪声放大器
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI: 10.1109/SMIC.2008.28
A. Chen, Hsiao-Bin Liang, Y. Baeyens, Young-Kai Chen, Yo‐Sheng Lin
{"title":"A Broadband Millimeter-Wave Low-Noise Amplifier in SiGe BiCMOS Technology","authors":"A. Chen, Hsiao-Bin Liang, Y. Baeyens, Young-Kai Chen, Yo‐Sheng Lin","doi":"10.1109/SMIC.2008.28","DOIUrl":"https://doi.org/10.1109/SMIC.2008.28","url":null,"abstract":"A broadband millimeter-wave low-noise amplifier (LNA) operating at V-band (50 GHz to 75 GHz) is presented. The circuit is fabricated with 0.18 mum SiGe BiCMOS technology. The matching networks are synthesized with microstrip transmission lines. The LNA achieves a maximum transducer power gain |S21| of ~16 dB, a noise figure of 6.8 dB at 62 GHz, and a 3-dB bandwidth from 54 GHz to 70 GHz. The output return loss is better than 12 dB from 59 GHz to 72 GHz. The reverse isolation |S12| is better than 40 dB over the 3-dB bandwidth. The LNA draws 9.6 mA from a 2.5 V supply.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132281154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
High Voltage Complementary Epi Free LDMOS Module with 70 V PLDMOS for a 0.25 μm SiGe:C BiCMOS Platform 高压互补无Epi LDMOS模块，70 V PLDMOS，用于0.25 μm SiGe:C BiCMOS平台
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI: 10.1109/SMIC.2008.21
R. Sorge, A. Fischer, K. Ehwald, R. Barth, P. Ostrovsky, R. Pliquett, K. Schulz, D. Bolze, P. Schley, D. Schmidt, H. Wulf, H. Grutzediek, J. Scheerer, P. Hartmetz
{"title":"High Voltage Complementary Epi Free LDMOS Module with 70 V PLDMOS for a 0.25 μm SiGe:C BiCMOS Platform","authors":"R. Sorge, A. Fischer, K. Ehwald, R. Barth, P. Ostrovsky, R. Pliquett, K. Schulz, D. Bolze, P. Schley, D. Schmidt, H. Wulf, H. Grutzediek, J. Scheerer, P. Hartmetz","doi":"10.1109/SMIC.2008.21","DOIUrl":"https://doi.org/10.1109/SMIC.2008.21","url":null,"abstract":"We demonstrate the integration of a low-cost, high-voltage complementary LDMOS module with BVdss of -71V and 83V for the PLDMOS and the NLDMOS, respectively, into an advanced industrial 0.25 mum SiGe:C BICMOS process. The essential deep N-well for the high voltage PLDMOS is formed by a single 6MeV P implantation step. BVdss*ft of the NLDMOS accomplishes record values > 900 VGHz.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125092597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High Quality Monolithic 8-Shaped Inductors for Silicon RF IC Design 用于硅射频集成电路设计的高质量单片8形电感器
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI: 10.1109/SMIC.2008.30
O. Tesson
{"title":"High Quality Monolithic 8-Shaped Inductors for Silicon RF IC Design","authors":"O. Tesson","doi":"10.1109/SMIC.2008.30","DOIUrl":"https://doi.org/10.1109/SMIC.2008.30","url":null,"abstract":"In this paper, RF characterization results of 8-shaped inductors on high resistivity silicon (HRS) substrate are presented. Electrical performances reported to area occupation of 8-shaped inductors are compared to those of classical octagonal/rectangular inductors. It is observed that 8-shaped inductors lead to inductance values 60% higher than what could be expected from classical octagonal/rectangular devices. A predictive electrical model is proposed based on previous investigations. Correlations between measurements and simulation data are found satisfactory.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"PP 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126440921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
High Frequency Characterization of Compact N+Poly/Nwell Varactor Using Waffle-Layout 紧凑N+Poly/Nwell变容管的高频特性研究
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI: 10.1109/SMIC.2008.48
Y. Morandini, J. Larchanche, C. Gaquière
{"title":"High Frequency Characterization of Compact N+Poly/Nwell Varactor Using Waffle-Layout","authors":"Y. Morandini, J. Larchanche, C. Gaquière","doi":"10.1109/SMIC.2008.48","DOIUrl":"https://doi.org/10.1109/SMIC.2008.48","url":null,"abstract":"The high frequency characterization of a new waffle layout for N+Poly/Nwell varactor has been studied in STMicroelectronics 65 nm CMOS process. We compare this new waffle layout with model of standard multifingers varactor. In addition to the area saving, the waffle MOS varactor also provides enhancement to the RF merit figure of varactor through the serial resistance and substrate capacitance improvement.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125377722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
SiC Varactor Based Tunable Filters with Enhanced Linearity 基于SiC变容管的线性度增强可调滤波器
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI: 10.1109/SMIC.2008.47
M. Roy, R. Ward, J. Higgins
{"title":"SiC Varactor Based Tunable Filters with Enhanced Linearity","authors":"M. Roy, R. Ward, J. Higgins","doi":"10.1109/SMIC.2008.47","DOIUrl":"https://doi.org/10.1109/SMIC.2008.47","url":null,"abstract":"The wide bandgap material silicon carbide(SiC) has been used to implement a varactor which provides high Q, high voltage capability, and low losses when employed to realize tunable filters for high power signals in the VHF band. The variable capacitance diode can reach reverse bias levels of -120 Volts. These varactors have been used in a three pole filter at VHF frequencies and have shown < 3 dB loss with bandwidth of less than ~10% in the ISO MHz range. The devices have been designed and fabricated in a manner to facilitate employing the varactors as back-to-back pairs. Measurements of the three pole filters demonstrate that this arrangement results in a substantial improvement in input intercept point (IIP3) power levels.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114673436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
CMOS-MEMS Filters CMOS-MEMS过滤器
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI: 10.1109/SMIC.2008.34
G. Fedder, T. Mukherjee
{"title":"CMOS-MEMS Filters","authors":"G. Fedder, T. Mukherjee","doi":"10.1109/SMIC.2008.34","DOIUrl":"https://doi.org/10.1109/SMIC.2008.34","url":null,"abstract":"Silicon radio integration is currently limited by the ability to achieve high-Q filters on chip with the RF transistors. Furthermore, multi-terminal radio trends are driving the need for widely tunable filters. Progress on high-Q electrically-selectable CMOS-MEMS micromechanical filters and medium-Q widely tunable CMOS-MEMS LC filters is described. These filters are directly integrated from existing layers in foundry CMOS or BiCMOS processes and so may provide a manufacturable solution to future radio needs. Two LC filter topologies are described showing measured insertion loss as low as 5.1 dB and tuning range as high as 28%. The CMOS-MEMS micromechanical filters achieve Q of over 3000 at low pressure. Operation as an electromechanical mixer filter may lead to a compact on-chip solution for spectral power sensing for cognitive radio.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122271588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Temperature Stability and Reliability Aspects of 77 GHz Voltage Controlled Oscillators in a SiGe:C BiCMOS Technology SiGe:C BiCMOS技术中77 GHz压控振荡器的温度稳定性和可靠性
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI: 10.1109/SMIC.2008.49
G. Fischer, S. Glisic
{"title":"Temperature Stability and Reliability Aspects of 77 GHz Voltage Controlled Oscillators in a SiGe:C BiCMOS Technology","authors":"G. Fischer, S. Glisic","doi":"10.1109/SMIC.2008.49","DOIUrl":"https://doi.org/10.1109/SMIC.2008.49","url":null,"abstract":"The factors determining the temperature stability of a 77 GHz voltage controlled oscillator (VCO) and reliability issues of the SiGe:C hetero bipolar transistors (HBT) used in the VCO are studied. The VCO with output buffer and NMOS varactors shows an output power of +14.6 dBm at 77 GHz. In the temperature range up to 125degC we get a low oscillation frequency shift Deltafosc = -1.2 GHz/100 K. Although the HBTs used for the VCO show significant base current degradation during high and low temperature stress, their rf and low-frequency noise behavior, relevant for VCO reliability, is not affected.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134473995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
50 GHz Integrated Distributed Phase Shifter Based on Novel Silicon-on-Glass Varactor Diodes 基于新型玻璃上硅变容二极管的50ghz集成分布式移相器
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI: 10.1109/SMIC.2008.56
G. Gentile, K. Buisman, A. Akhoukh, L. D. de Vreede, B. Rejaei, L. Nanver
{"title":"50 GHz Integrated Distributed Phase Shifter Based on Novel Silicon-on-Glass Varactor Diodes","authors":"G. Gentile, K. Buisman, A. Akhoukh, L. D. de Vreede, B. Rejaei, L. Nanver","doi":"10.1109/SMIC.2008.56","DOIUrl":"https://doi.org/10.1109/SMIC.2008.56","url":null,"abstract":"We present experimental results for an integrated coplanar phase shifter based on varactor diodes fabricated using a silicon on glass process. A differential phase shift of 180 degrees is obtained at 50 GHz with the dc bias voltage varied between 2.1 and 15 volts. The return loss of the phase shifter is below 15 db. The insertion loss strongly depends on the dc bias voltage applied, but is below 14 db in the bias range of interest.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123637267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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