紧凑N+Poly/Nwell变容管的高频特性研究

2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI:10.1109/SMIC.2008.48

Y. Morandini, J. Larchanche, C. Gaquière

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引用次数: 7

摘要

在意法半导体65nm CMOS工艺中，研究了一种新型N+Poly/Nwell变容管的高频特性。我们将这种新的华夫饼布局与标准多指变容器模型进行了比较。除了节省面积外，华夫MOS变容管还通过串联电阻和衬底电容的改进提高了变容管的射频性能。

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High Frequency Characterization of Compact N+Poly/Nwell Varactor Using Waffle-Layout

The high frequency characterization of a new waffle layout for N+Poly/Nwell varactor has been studied in STMicroelectronics 65 nm CMOS process. We compare this new waffle layout with model of standard multifingers varactor. In addition to the area saving, the waffle MOS varactor also provides enhancement to the RF merit figure of varactor through the serial resistance and substrate capacitance improvement.

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2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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