SiGe:C BiCMOS技术中77 GHz压控振荡器的温度稳定性和可靠性

2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI:10.1109/SMIC.2008.49

G. Fischer, S. Glisic

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引用次数: 10

摘要

研究了77 GHz压控振荡器(VCO)温度稳定性的影响因素和用于VCO的SiGe:C异质双极晶体管(HBT)的可靠性问题。带输出缓冲器和NMOS变容管的压控振荡器在77 GHz时的输出功率为+14.6 dBm。在高达125摄氏度的温度范围内，我们得到一个低振荡频移delta = -1.2 GHz/100 K。尽管用于VCO的hbt在高温和低温应力下显示出明显的基极电流衰减，但与VCO可靠性相关的rf和低频噪声行为不受影响。

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Temperature Stability and Reliability Aspects of 77 GHz Voltage Controlled Oscillators in a SiGe:C BiCMOS Technology

The factors determining the temperature stability of a 77 GHz voltage controlled oscillator (VCO) and reliability issues of the SiGe:C hetero bipolar transistors (HBT) used in the VCO are studied. The VCO with output buffer and NMOS varactors shows an output power of +14.6 dBm at 77 GHz. In the temperature range up to 125degC we get a low oscillation frequency shift Deltafosc = -1.2 GHz/100 K. Although the HBTs used for the VCO show significant base current degradation during high and low temperature stress, their rf and low-frequency noise behavior, relevant for VCO reliability, is not affected.

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2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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