High Voltage Complementary Epi Free LDMOS Module with 70 V PLDMOS for a 0.25 μm SiGe:C BiCMOS Platform

2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI:10.1109/SMIC.2008.21

R. Sorge, A. Fischer, K. Ehwald, R. Barth, P. Ostrovsky, R. Pliquett, K. Schulz, D. Bolze, P. Schley, D. Schmidt, H. Wulf, H. Grutzediek, J. Scheerer, P. Hartmetz

引用次数: 3

Abstract

We demonstrate the integration of a low-cost, high-voltage complementary LDMOS module with BVdss of -71V and 83V for the PLDMOS and the NLDMOS, respectively, into an advanced industrial 0.25 mum SiGe:C BICMOS process. The essential deep N-well for the high voltage PLDMOS is formed by a single 6MeV P implantation step. BVdss*ft of the NLDMOS accomplishes record values > 900 VGHz.

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高压互补无Epi LDMOS模块，70 V PLDMOS，用于0.25 μm SiGe:C BiCMOS平台

我们演示了将低成本，高压互补的LDMOS模块(PLDMOS和NLDMOS的bvds分别为-71V和- 83V)集成到先进的工业0.25 μ m SiGe:C BICMOS工艺中。高压PLDMOS所需的深n阱是由一个6MeV的P注入步骤形成的。NLDMOS的BVdss*ft实现记录值> 900 VGHz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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