具有子设计规则(SDR)多晶硅长度的厚栅氧化物MOS结构应用于射频电路

2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI:10.1109/SMIC.2008.53

H. Xu, K. O

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引用次数: 0

摘要

采用子设计规则(SDR)厚栅氧化物MOS结构可以显著提高射频性能。利用3叠3.3 v MOSFET的SDR通道长度，实现了31.3 dbm 900 mhz Bulk CMOS T/R开关，发射(TX)和接收(RX)的插入损耗分别为0.5 dB和1.0 dB。还演示了一种28-dBm 2.4 ghz收发开关，其TX和RX插入损耗分别为0.8和1.2 dB。SDR MOS变容管在24 GHz时的Qmin达到~ 80，调谐范围为~ 40%。

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Thick-Gate-Oxide MOS Structures with Sub-Design-Rule (SDR) Polysilicon Lengths for RF Circuit Applications

Use of sub-design-rule (SDR) thick-gate-oxide MOS structures can significantly improve RF performance. Utilizing 3-stack 3.3-V MOSFET's with an SDR channel length, a 31.3-dBm 900-MHz Bulk CMOS T/R switch with transmit (TX) and receive (RX) insertion losses of 0.5 and 1.0 dB is realized. A 28-dBm 2.4-GHz T/R switch with TX and RX insertion losses of 0.8 and 1.2 dB is also demonstrated. SDR MOS varactors achieve Qmin of ~ 80 at 24 GHz with a tuning range of ~ 40%.

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2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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