镇流器电阻实现对共基SiGe功率hbt线性度和射频性能的影响

2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI:10.1109/SMIC.2008.24

Hui Li, Guoxuan Qin, Z. Ma, P. Ma, M. Racanelli

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引用次数: 1

摘要

实验研究了镇流器对共基SiGe功率hbt的射频性能(小信号和大信号)和线性度的影响。结果表明，与基极镇流器方案相比，采用发射极镇流器方案可以获得更高的射频性能和更好的线性度。

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Impact of Ballast Resistor Implementations on Linearity and RF Performance of Common-Base SiGe Power HBTs

The influence of ballasting resistor implementations on the RF performance (both small-signal and large-signal) and on the linearity of common-base (CB) SiGe power HBTs is experimentally investigated. It is demonstrated that higher RF performance and better linearity can be achieved from CB SiGe HBTs by using emitter ballasting scheme than using base ballasting scheme.

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2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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