硅锗技术x波段接收机前端芯片

2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI:10.1109/SMIC.2008.11

T. Quach, C. Bryant, G. Creech, K. Groves, T. James, A. Mattamana, P. Orlando, V. Patel, R. Drangmeister, L. Johnson, B. Kormanyos, R. Bonebright

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引用次数: 3

摘要

本文报道了采用0.18 μ m硅锗(SiGe)技术实现的x波段接收机射频前端组件和集成芯片组的演示。系统架构包括从输入端的x波段到中频输出端的s波段的单一下变频。微波单片集成电路(MMIC)包括一个x波段低噪声放大器、前置滞后分配器、平衡放大器、双平衡混频器、吸收滤波器和一个中频放大器。集成芯片实现了大于30db的增益和小于6db的噪声系数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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X-Band Receiver Front-End Chip in Silicon Germanium Technology

This paper reports a demonstration of X-band receiver RF front-end components and the integrated chipset implemented in 0.18 mum silicon germanium (SiGe) technology. The system architecture consists of a single down conversion from X-band at the input to S-band at the intermediate frequency (IF) output. The microwave monolithic integrated circuit (MMIC) includes an X-band low noise amplifier, lead-lag splitter, balanced amplifiers, double balanced mixer, absorptive filter, and an IF amplifier. The integrated chip achieved greater than 30 dB of gain and less than 6 dB of noise figure.

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来源期刊

2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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