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15th Annual GaAs IC Symposium最新文献

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75-110 GHz InGaAs/GaAs HEMT high gain MMIC amplifier 75-110 GHz InGaAs/GaAs HEMT高增益MMIC放大器
15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI: 10.1109/GAAS.1993.394453
S. Liu, K. Duh, S.C. Wang, O. Tang, P.M. Smith
{"title":"75-110 GHz InGaAs/GaAs HEMT high gain MMIC amplifier","authors":"S. Liu, K. Duh, S.C. Wang, O. Tang, P.M. Smith","doi":"10.1109/GAAS.1993.394453","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394453","url":null,"abstract":"A monolithic four-stage gain block amplifier based on 0.1 /spl mu/m InGaAs/GaAs PHEMT technology has been developed for wideband signal amplification covering the full W-band of 75 to 110 GHz. The development is part of an effort to build a low cost receiver module where full W-band instantaneous bandwidth is required. The measured gain averages about 22 dB while the noise figure ranges from 5.3 dB to 6.8 dB across the band. This is the first full W-band PHEMT MMIC amplifier to be reported, and its gain and noise figure performance compare favorably with other narrowband W-band circuits reported. Careful device and circuit characterization, repeatability of fabrication process, and design optimization played the main role in leading to the first-pass success of this MMIC.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131267945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Wireless data networks: An opportunity for GaAs 无线数据网络:GaAs的机会
15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI: 10.1109/GAAS.1993.394509
J. Loraine
{"title":"Wireless data networks: An opportunity for GaAs","authors":"J. Loraine","doi":"10.1109/GAAS.1993.394509","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394509","url":null,"abstract":"There has never been a better opportunity for GaAs than wireless data networks since the allocated spectrum is at frequencies where GaAs can compete with, and beat, silicon. The author discusses wireless data network applications and the resulting GaAs opportunities.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124156622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
High performance integrated PA, T/R switch for 1.9 GHz personal communications handsets 用于1.9 GHz个人通信手持设备的高性能集成扩音、收发开关
15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI: 10.1109/GAAS.1993.394506
P. O'Sullivan, G. St. Onge, E. Heaney, F. McGrath, C. Kermarrec
{"title":"High performance integrated PA, T/R switch for 1.9 GHz personal communications handsets","authors":"P. O'Sullivan, G. St. Onge, E. Heaney, F. McGrath, C. Kermarrec","doi":"10.1109/GAAS.1993.394506","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394506","url":null,"abstract":"The authors present a state of the art power amplifier and T/R switch GaAs MMIC product for the 1.9 GHz Japanese PHP system. The design consists of a single die (1.8 mm /spl times/ 1.2 mm) in a 28 pin QSOP surface mount plastic package. The two stage power amplifier exhibits 28 dB gain with greater than 44% PAE at a P1dB of 23 dBm. The adjacent channel interference level is better than 60 dBc at /spl plusmn/600 kHz when tested at this rated output power. The T/R switch exhibits 1 dB insertion loss, 30 dB isolation and OIP3 of greater than 44 dBm when used with two 0.25 watt tones.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114537070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
AlGaAs/GaAs HBTs with high f/sub max/ for high-speed optical modulator driver circuit 用于高速光调制器驱动电路的高f/sub max/ AlGaAs/GaAs HBTs
15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI: 10.1109/GAAS.1993.394445
K. Sakita, H. Endo, K. Ishii, H. Ohnishi, K. Yamashita, T. Ihara, H. Hamano, T. Fujii, N. Yokoyama
{"title":"AlGaAs/GaAs HBTs with high f/sub max/ for high-speed optical modulator driver circuit","authors":"K. Sakita, H. Endo, K. Ishii, H. Ohnishi, K. Yamashita, T. Ihara, H. Hamano, T. Fujii, N. Yokoyama","doi":"10.1109/GAAS.1993.394445","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394445","url":null,"abstract":"AlGaAs/GaAs HBTs having an f/sub max/ of 120.9 GHz and a breakdown voltage over 10 V of BV/sub ceo/ suitable for a high-speed and large voltage swing driver circuit have been demonstrated. Using these HBTs, an optical external modulator driver circuit with 29 ps of t/sub /spl tau// and 25 ps of t/sub f/ which make it possible to operate at 10 Gb/s was realized.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114725772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Gb/s array LSIs for parallel optical links 用于并行光链路的Gb/s阵列lsi
15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI: 10.1109/GAAS.1993.394449
H. Watanabe, K. Mori, S. Komatsubara, N. Fujimoto, T. Horimatsu
{"title":"Gb/s array LSIs for parallel optical links","authors":"H. Watanabe, K. Mori, S. Komatsubara, N. Fujimoto, T. Horimatsu","doi":"10.1109/GAAS.1993.394449","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394449","url":null,"abstract":"The authors develop four-channel GaAs transmitter and receiver LSI chips for parallel optical links. The transmitter and receiver LSI chips have uniform characteristics across the four channels. A transmission experiment using this chip set, and LD array, and a PD array confirmed that the parallel optical link provides simultaneous four-channel operation exceeding 1.2 Gb/s/ch.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117176636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Effect of circuit parameters and topology on intermodulation in MESFET circuits 电路参数和拓扑结构对MESFET电路互调的影响
15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI: 10.1109/GAAS.1993.394457
D. Webster, A. Parker, D. Haigh, J.B. Scott
{"title":"Effect of circuit parameters and topology on intermodulation in MESFET circuits","authors":"D. Webster, A. Parker, D. Haigh, J.B. Scott","doi":"10.1109/GAAS.1993.394457","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394457","url":null,"abstract":"Third-order intermodulation intercept is a very important criterion in communication circuits and the authors present a preliminary investigation of the mechanisms responsible. It is shown that interaction of the intrinsic MESFET second-order nonlinearity with linear circuit and parasitic components can cause significant distortion. MESFET output conductance is shown to also cause an interaction effect. Hence, intercept points quite different from those predicted by standard device characterization techniques can be obtained. Some regions of enhanced performance have been identified. Circuit topology also plays a key role in determining distortion. Some experimental results are given.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124473417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Successful high volume GaAs IC manufacturing the Anadigics experience Anadigics的高批量GaAs集成电路制造经验
15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI: 10.1109/GAAS.1993.394488
S. Khetan, P. Wallace
{"title":"Successful high volume GaAs IC manufacturing the Anadigics experience","authors":"S. Khetan, P. Wallace","doi":"10.1109/GAAS.1993.394488","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394488","url":null,"abstract":"Successful high volume GaAs integrated circuit manufacturing at Anadigics is discussed. The transition from serving defense markets to serving commercial markets is investigated, and lessons learned in this process are presented.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125750718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
GaAs opportunities in high performance computing and communications GaAs在高性能计算和通信领域的机会
15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI: 10.1109/GAAS.1993.394511
J. Toole, R. Brown
{"title":"GaAs opportunities in high performance computing and communications","authors":"J. Toole, R. Brown","doi":"10.1109/GAAS.1993.394511","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394511","url":null,"abstract":"High performance computing and networking are becoming the backbone of the scientific and information infrastructure, incorporating emerging technologies into productive applications at an accelerating pace. These technologies are important both for the national security and as the basis of the future economic competitiveness. The Federal High Performance Computing and Communications Program provides an innovative and coordinated research agenda for the US in these areas. The question of greatest interest to the III/V community is, \"What role will emerge for compound semiconductors as computing reinvents itself?\". The authors present some insights, and a sample of the GaAs-related research funded by the Advanced Research Projects Agency. Results of these efforts will significantly contribute to the future role these semiconductors will play in mainstream computing.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126771644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Bump heat sink technology - A novel assembly technology suitable for power HBTs 凸点散热器技术——一种适用于大功率hbt的新型组装技术
15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI: 10.1109/GAAS.1993.394439
H. Sato, M. Miyauchi, K. Sakuno, M. Akagi, M. Hasegawa, J. Twynam, K. Yamamura, T. Tomita
{"title":"Bump heat sink technology - A novel assembly technology suitable for power HBTs","authors":"H. Sato, M. Miyauchi, K. Sakuno, M. Akagi, M. Hasegawa, J. Twynam, K. Yamamura, T. Tomita","doi":"10.1109/GAAS.1993.394439","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394439","url":null,"abstract":"A novel assembly technique, bump heat sink (BHS), suitable for compound semiconductor power HBTs is proposed and demonstrated. In this technique, the heat generated in the transistor junction is effectively conducted away through a gold bump which is located on the top of each transistor unit. Using this technique, power transistors are demonstrated with power added efficiencies /spl eta//sub add/ of 74%, 66% and 61% for 5.0 W, 8.0 W and 10.0 W output CW, respectively, at 0.9 GHz with V/sub cc/=6 V. A three-stage HBT MMIC power amplifier for GSM class 4 is also demonstrated with /spl eta//sub add/ >55% at V/sub cc/=4 V CW operation.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125622532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
0.5 /spl mu/m AlGaAs/GaAs HMESFET technology for digital VLSI products 0.5 /spl mu/m数字VLSI产品的AlGaAs/GaAs HMESFET技术
15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI: 10.1109/GAAS.1993.394471
T. Tsen, S. Tiku, J. Chun, E. Walton, C. Bhasker, J. Penney, R. Tang, K. Schneider, M. Campise
{"title":"0.5 /spl mu/m AlGaAs/GaAs HMESFET technology for digital VLSI products","authors":"T. Tsen, S. Tiku, J. Chun, E. Walton, C. Bhasker, J. Penney, R. Tang, K. Schneider, M. Campise","doi":"10.1109/GAAS.1993.394471","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394471","url":null,"abstract":"A 0.5 /spl mu/m AlGaAs/GaAs HMESFET technology has been developed and used to fabricate several high speed, high density circuits, such as a 2.5 ns 16 K static RAM and 1 GHz gate array and standard cell circuits. A family of channel-less DCFL/SBFL gate arrays with raw gate count ranging from 10 K to 100 K for commercial and military applications are currently in production.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131194573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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