{"title":"75-110 GHz InGaAs/GaAs HEMT高增益MMIC放大器","authors":"S. Liu, K. Duh, S.C. Wang, O. Tang, P.M. Smith","doi":"10.1109/GAAS.1993.394453","DOIUrl":null,"url":null,"abstract":"A monolithic four-stage gain block amplifier based on 0.1 /spl mu/m InGaAs/GaAs PHEMT technology has been developed for wideband signal amplification covering the full W-band of 75 to 110 GHz. The development is part of an effort to build a low cost receiver module where full W-band instantaneous bandwidth is required. The measured gain averages about 22 dB while the noise figure ranges from 5.3 dB to 6.8 dB across the band. This is the first full W-band PHEMT MMIC amplifier to be reported, and its gain and noise figure performance compare favorably with other narrowband W-band circuits reported. Careful device and circuit characterization, repeatability of fabrication process, and design optimization played the main role in leading to the first-pass success of this MMIC.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"75-110 GHz InGaAs/GaAs HEMT high gain MMIC amplifier\",\"authors\":\"S. Liu, K. Duh, S.C. Wang, O. Tang, P.M. Smith\",\"doi\":\"10.1109/GAAS.1993.394453\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A monolithic four-stage gain block amplifier based on 0.1 /spl mu/m InGaAs/GaAs PHEMT technology has been developed for wideband signal amplification covering the full W-band of 75 to 110 GHz. The development is part of an effort to build a low cost receiver module where full W-band instantaneous bandwidth is required. The measured gain averages about 22 dB while the noise figure ranges from 5.3 dB to 6.8 dB across the band. This is the first full W-band PHEMT MMIC amplifier to be reported, and its gain and noise figure performance compare favorably with other narrowband W-band circuits reported. Careful device and circuit characterization, repeatability of fabrication process, and design optimization played the main role in leading to the first-pass success of this MMIC.<<ETX>>\",\"PeriodicalId\":347339,\"journal\":{\"name\":\"15th Annual GaAs IC Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-10-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"15th Annual GaAs IC Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1993.394453\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"15th Annual GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1993.394453","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
75-110 GHz InGaAs/GaAs HEMT high gain MMIC amplifier
A monolithic four-stage gain block amplifier based on 0.1 /spl mu/m InGaAs/GaAs PHEMT technology has been developed for wideband signal amplification covering the full W-band of 75 to 110 GHz. The development is part of an effort to build a low cost receiver module where full W-band instantaneous bandwidth is required. The measured gain averages about 22 dB while the noise figure ranges from 5.3 dB to 6.8 dB across the band. This is the first full W-band PHEMT MMIC amplifier to be reported, and its gain and noise figure performance compare favorably with other narrowband W-band circuits reported. Careful device and circuit characterization, repeatability of fabrication process, and design optimization played the main role in leading to the first-pass success of this MMIC.<>
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