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15th Annual GaAs IC Symposium最新文献

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A novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSIs 一种用于超低电源电压GaAs异质结场效应晶体管的新型高速低功耗三态驱动触发器(TD-FF)
15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI: 10.1109/GAAS.1993.394496
T. Maeda, K. Numata, M. Tokushima, M. Ishikawa, M. Fukaishi, H. Hida, Y. Ohno
{"title":"A novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSIs","authors":"T. Maeda, K. Numata, M. Tokushima, M. Ishikawa, M. Fukaishi, H. Hida, Y. Ohno","doi":"10.1109/GAAS.1993.394496","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394496","url":null,"abstract":"The authors describe a new GaAs static flip flop, called TD-FF (tri-state driver flip flop), for ultra-low supply voltage GaAs heterojunction FET LSIs. The TD-FF operates at a data rate of 10 Gbps with 18 mW power consumption at 0.8 V supply voltage. The 10 Gbps power consumption is 1/5 of the minimum value reported for D-FFs so far. The authors also demonstrate a 1/8 static frequency divider IC using the TD-FF configuration. This IC operates up to 10 GHz with 38 mW at 0.8 V supply voltage.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123123612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
GaAs IC reliability, the next generation GaAs集成电路可靠性，下一代
15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI: 10.1109/GAAS.1993.394491
W. Roesch
{"title":"GaAs IC reliability, the next generation","authors":"W. Roesch","doi":"10.1109/GAAS.1993.394491","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394491","url":null,"abstract":"Improvements in semiconductor reliability are constantly being expected and so far, they have been achieved. A historical perspective is presented which provides evidence regarding changes in the way people think about reliability, for GaAs MESFET integrated circuits, in particular. Comparisons to silicon reliability history, and between old and new philosophies are made. Although not intended as a panacea, the direction towards measuring, analyzing, and controlling the variability of all input parameters to reliability is discussed as the key to reaching the next generation.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124938309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Process, performance, and reliability characterization of a GaAs VLSI technology GaAs VLSI技术的工艺、性能和可靠性表征
15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI: 10.1109/GAAS.1993.394490
W. Yamada, K. Macwilliams, S. Brown, N. Zamani, B. Blaes, M. Buehler
{"title":"Process, performance, and reliability characterization of a GaAs VLSI technology","authors":"W. Yamada, K. Macwilliams, S. Brown, N. Zamani, B. Blaes, M. Buehler","doi":"10.1109/GAAS.1993.394490","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394490","url":null,"abstract":"The authors present the results from a study of a commercial digital GaAs foundry and attempt to establish a methodology to characterize the process, performance, and reliability of that foundry's technology. A variety of increasingly complex test structures were designed to characterize the digital GaAs process. These structures include the elemental test structures for interconnects, contacts, junctions and devices to increasingly complex gates, latches, simple circuits and gate arrays. The increasing complexity in test structures insures that the results obtained are consistent and accurate. A novel timing circuit called a matrix delay chain is one of the key structures used to characterize the technology. This test structure is intended to allow the direct measurement of inverter propagation delay and as a monitor of performance variations. These variations are due to (1) process nonuniformities, (2) power supply fluctuations, (3) temperature extremes, (4) reliability degradations and, for use in space, and (5) radiation degradations. The collection of test structures was fabricated in an enhancement-depletion mode process utilizing 0.8 /spl mu/m gate length, and three level aluminum based metallization.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126036630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The use of compilers for digital GaAs IC design 利用编译器进行数字GaAs集成电路的设计
15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI: 10.1109/GAAS.1993.394499
R. Oettel
{"title":"The use of compilers for digital GaAs IC design","authors":"R. Oettel","doi":"10.1109/GAAS.1993.394499","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394499","url":null,"abstract":"The ultimate performance of an integrated circuit can be substantially improved by using a compiler-based tool for its design. This is particularly true for gallium arsenide circuits where speed performance is critical, the cost of real estate is high, and design expertise is scarce. Furthermore, now that high levels of integration are possible with GaAs, automated layout tools are needed to manage the complexity and simultaneously preserve the performance potential of the technology. The result of applying compiler methodology to several generations of gallium arsenide technology over an eight year period is reported.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123710107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A monolithic multifunction EW broadband receiver converter 单片多功能电子战宽带接收转换器
15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI: 10.1109/GAAS.1993.394468
W. Brinlee, A. Pavio, C. Goldsmith, W. Thompson
{"title":"A monolithic multifunction EW broadband receiver converter","authors":"W. Brinlee, A. Pavio, C. Goldsmith, W. Thompson","doi":"10.1109/GAAS.1993.394468","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394468","url":null,"abstract":"A unique multifunction receiver converter chip, consisting of RF amplifiers, switches, a lumped-element filter, and a double-balanced mixer, has been developed. The chip design employs various circuit design refinements, such as amplifier feedback techniques to enhance stability and repeatability, FET switches to reduce power consumption, and a lumped-element filter to reduce size. The double-balanced mixer topology eliminates IF extraction problems and combines the best performance characteristics of active and passive baluns while employing diode mixing elements.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125289661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A monolithic 1/spl times/2 W-band four-stage low noise amplifier array [for antennas and FPA] 单片1/spl倍/2 w波段四级低噪声放大器阵列[用于天线和FPA]
15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI: 10.1109/GAAS.1993.394451
D. Lo, G. Dow, S. Chen, H. Wang, T. Ton, K. Tan, B. Allen
{"title":"A monolithic 1/spl times/2 W-band four-stage low noise amplifier array [for antennas and FPA]","authors":"D. Lo, G. Dow, S. Chen, H. Wang, T. Ton, K. Tan, B. Allen","doi":"10.1109/GAAS.1993.394451","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394451","url":null,"abstract":"The authors report a monolithic 1/spl times/2 W-band four-stage low noise amplifier array based on 0.1 /spl mu/m PM Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.22/Ga/sub 0.78/As/GaAs HEMT technology for applications in W-band phased array antennas or focal plane imaging array. The amplifiers have achieved an average gain of 19 dB over the band from 77 to 100 GHz and a noise figure of 5-6 dB from 92 to 96 GHz. Crosstalk between the amplifiers in the 1/spl times/2 array is less than -25 dB from 80 to 100 GHz. Successful demonstration of this high level integrated MMIC indicates the maturity of 0.1 /spl mu/m GaAs-based HEMT technology and the feasiblity of high density monolithic integration of array or multifunction chips for future low cost and compact millimeter wave systems.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125682478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
GaAs on InP MESFETs and circuits for OEICs InP mesfet上的GaAs和oeic电路
15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI: 10.1109/GAAS.1993.394469
A. Clei, S. Sainson, M. Feuillade, K. Sauv, R. Azoulay, J. Dumas, M. Chertouk, O. Calliger, R. Lefevre
{"title":"GaAs on InP MESFETs and circuits for OEICs","authors":"A. Clei, S. Sainson, M. Feuillade, K. Sauv, R. Azoulay, J. Dumas, M. Chertouk, O. Calliger, R. Lefevre","doi":"10.1109/GAAS.1993.394469","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394469","url":null,"abstract":"High performance FETs and circuits realized on GaAs layers heteroepitaxially grown on InP are described. Low parasitic effects are ascertained by noise and pulse measurements indicating a low electrical activity of the defects related to the lattice mismatch. 0.3 /spl mu/m gatelength laser drivers show satisfactory behavior at 10 Gbit/s. Device degradation observed after accelerated aging tests results from contact degradation rather than from mismatched materials problems. GaAs on InP FETs appear to be good candidates for 1.3-1.55 /spl mu/m OEICs.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115353008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Unique determination of AlGaAs/GaAs HBT's small-signal equivalent circuit parameters 独特测定 AlGaAs/GaAs HBT 的小信号等效电路参数
15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI: 10.1109/GAAS.1993.394456
Der-woei Wu, D.L. Miller, M. Fukuda, Y. Yun
{"title":"Unique determination of AlGaAs/GaAs HBT's small-signal equivalent circuit parameters","authors":"Der-woei Wu, D.L. Miller, M. Fukuda, Y. Yun","doi":"10.1109/GAAS.1993.394456","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394456","url":null,"abstract":"A new parameter extraction technique for heterojunction bipolar transistors (HBTs) is described. Utilizing a novel low frequency extraction algorithm, the intrinsic elements and the resistive parasitics are obtained. The overall small-signal equivalent circuit of HBTs is then determined based on those extracted element values. This technique advances current equivalent circuit modeling capability of HBTs by minimizing the interactive computer optimization/simulation process and removing the need of special test structures.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129189637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
An integrated GaAs 1.25 GHz clock frequency FM-CW direct digital synthesizer 一种集成的GaAs 1.25 GHz时钟频率FM-CW直接数字合成器
15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI: 10.1109/GAAS.1993.394477
N. Caglio, J. Degouy, D. Meignant, P. Rousseau, B. Leroux
{"title":"An integrated GaAs 1.25 GHz clock frequency FM-CW direct digital synthesizer","authors":"N. Caglio, J. Degouy, D. Meignant, P. Rousseau, B. Leroux","doi":"10.1109/GAAS.1993.394477","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394477","url":null,"abstract":"An integrated GaAs FM-CW direct digital synthesizer (DDS) has been developed using Philips Microwave Limeil (PML) standard ER07AD technology. The DDS is composed of two successive functional blocks: a double phase accumulator which produces the right synchronizing sequences and a digital to analog sine converter (DASC) which generates the linear chirp waveform. The double phase accumulator has been implemented with five chips while the DASC is monolithic. The maximum measured clock frequency on the phase accumulator is 1.25 GHz and the power consumption is 320 mW. For the DASC, the maximum measured clock frequency is 1.5 GHz and the associated consumption is 600 mW.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124186509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Manufacturing technology development for high yield pseudomorphic HEMT 高产量伪晶HEMT制造技术发展
15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI: 10.1109/GAAS.1993.394476
S. Bar, C.S. Wu, Ming Hu, H. Kanber, C. Pao, W. Yau
{"title":"Manufacturing technology development for high yield pseudomorphic HEMT","authors":"S. Bar, C.S. Wu, Ming Hu, H. Kanber, C. Pao, W. Yau","doi":"10.1109/GAAS.1993.394476","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394476","url":null,"abstract":"The authors present an approach to establishing PHEMT manufacturing technology. They discuss the impact of development work in four key process areas. They also demonstrate good wafer uniformity and wafer to wafer reproducibility for PHEMT X-band multifunction LNAs.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134253948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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