高产量伪晶HEMT制造技术发展

15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI:10.1109/GAAS.1993.394476

S. Bar, C.S. Wu, Ming Hu, H. Kanber, C. Pao, W. Yau

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引用次数: 2

摘要

提出了一种建立PHEMT制造技术的方法。他们讨论了开发工作在四个关键过程域中的影响。它们还显示了PHEMT x波段多功能LNAs的良好晶圆均匀性和晶圆间再现性。

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Manufacturing technology development for high yield pseudomorphic HEMT

The authors present an approach to establishing PHEMT manufacturing technology. They discuss the impact of development work in four key process areas. They also demonstrate good wafer uniformity and wafer to wafer reproducibility for PHEMT X-band multifunction LNAs.<>

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来源期刊

15th Annual GaAs IC Symposium

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