GaAs on InP MESFETs and circuits for OEICs

15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI:10.1109/GAAS.1993.394469

A. Clei, S. Sainson, M. Feuillade, K. Sauv, R. Azoulay, J. Dumas, M. Chertouk, O. Calliger, R. Lefevre

引用次数: 3

Abstract

High performance FETs and circuits realized on GaAs layers heteroepitaxially grown on InP are described. Low parasitic effects are ascertained by noise and pulse measurements indicating a low electrical activity of the defects related to the lattice mismatch. 0.3 /spl mu/m gatelength laser drivers show satisfactory behavior at 10 Gbit/s. Device degradation observed after accelerated aging tests results from contact degradation rather than from mismatched materials problems. GaAs on InP FETs appear to be good candidates for 1.3-1.55 /spl mu/m OEICs.<>

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InP mesfet上的GaAs和oeic电路

描述了在InP上异质外延生长的GaAs层上实现的高性能场效应管和电路。通过噪声和脉冲测量确定了低寄生效应，表明与晶格失配相关的缺陷的低电活动。0.3 /spl mu/m栅极长度激光驱动器在10gbit /s速率下表现出满意的性能。加速老化试验后观察到的器件退化是由于接触退化，而不是由于材料不匹配问题。InP fet上的GaAs似乎是1.3-1.55 /spl mu/m oeic的良好候选者

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

15th Annual GaAs IC Symposium

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