A monolithic 1/spl times/2 W-band four-stage low noise amplifier array [for antennas and FPA]

Abstract

The authors report a monolithic 1/spl times/2 W-band four-stage low noise amplifier array based on 0.1 /spl mu/m PM Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.22/Ga/sub 0.78/As/GaAs HEMT technology for applications in W-band phased array antennas or focal plane imaging array. The amplifiers have achieved an average gain of 19 dB over the band from 77 to 100 GHz and a noise figure of 5-6 dB from 92 to 96 GHz. Crosstalk between the amplifiers in the 1/spl times/2 array is less than -25 dB from 80 to 100 GHz. Successful demonstration of this high level integrated MMIC indicates the maturity of 0.1 /spl mu/m GaAs-based HEMT technology and the feasiblity of high density monolithic integration of array or multifunction chips for future low cost and compact millimeter wave systems.<>